Silicon nitride yakasungirirwa silicon carbide square beam

Tsanangudzo Pfupi:

Si3N4 bonded SiC as a new type refractory material,inoshandiswa zvakafara.Tembiricha yekuisa i1400 C.Ine thermal stability irinani,thermal shock,zviri nani pane plain refractory material.Inewo anti-oxidation, high corrosion resistant, kupfeka-resistance, high bending simba.Inogona kuramba corrosion nekukorobha, irege kusvibiswa uye inokurumidza kupisa conduction musimbi yakanyungudutswa se AL,Pb,Zn,Cu ect.


Product Detail

Product Tags

描述

Silicon nitride yakasungirirwa silicon carbide

Si3N4 yakasungirirwa SiC ceramic refractory material, yakasanganiswa nepamusoro yakachena SIC poda yakatsetseka uye Silicon poda, mushure mekutsvedza kukanda kosi, kuita sintered pasi pe1400 ~ 1500 ° C.Munguva yekupisa, kuzadza iyo yakakwira yakachena Nitrogen muchoto, ipapo silicon ichaita neNitrogen uye inogadzira Si3N4, Saka Si3N4 yakasungirirwa SiC zvinhu inoumbwa nesilicon nitride (23%) uye silicon carbide (75%) sechinhu chikuru mbishi. , yakasanganiswa ne organic material, uye yakaumbwa nemusanganiswa, extrusion kana kudira, yozoitwa mushure mekuoma uye nitrogenization.

 

特点

Zvimiro uye zvakanakira:

1.High tembiricha kushivirira
2.High thermal conductivity uye shock resistance
3.High mechanical simba uye abrasion resistance
4.Excellent simba rekushandisa uye kusagadzikana kwekuora

Isu tinopa emhando yepamusoro uye nemachini akagadzirwa NSiC ceramic zvikamu izvo zvinogadzira

1.Slip casting
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing

Material Datasheet

> Kuumbwa Kwemakemikari Sic 75%
Si3N4 ≥23%
Free Si 0%
Kuwanda kwehuwandu (g/cm3) 2.702.80
Zviripachena porosity (%) 1215
Bend simba pa20 ℃(MPa) 180190
Bend simba pa1200 ℃(MPa) 207
Bend simba pa1350 ℃(MPa) 210
Kudzvinyirira simba pa20 ℃(MPa) 580
Thermal conductivity pa1200 ℃ (w/mk) 19.6
Thermal yekuwedzera coefficient pa1200 ℃(x 10-6/C) 4.70
Thermal shock resistance Excellent
Max.tembiricha (℃) 1600
1
微信截图_20230705142650

  • Zvakapfuura:
  • Zvinotevera: