Semicera's10x10mm Nonpolar M-ndege Aluminium Substrateyakagadzirwa zvine hungwaru kuti isangane nezvinodiwa chaizvo zvepamberi optoelectronic application. Iyi substrate ine nonpolar M-ndege yekutarisa, iyo yakakosha kudzikisa polarization mhedzisiro mumidziyo yakaita se LEDs uye laser diode, zvichitungamira mukusimudzira mashandiro uye kugona.
The10x10mm Nonpolar M-ndege Aluminium SubstrateYakagadzirwa neyakasiyana-siyana yekristaro mhando, ichivimbisa kushoma kuremara densities uye yepamusoro yemaitiro kutendeseka. Izvi zvinoita kuti ive sarudzo yakanaka yekukura epitaxial yemhando yepamusoro III-nitride mafirimu, ayo akakosha pakugadzirwa kwechizvarwa chinotevera optoelectronic zvishandiso.
Semicera's precision engineering inovimbisa kuti imwe neimwe10x10mm Nonpolar M-ndege Aluminium Substrateinopa ukobvu hunoenderana uye kupfava kwepasi, izvo zvakakosha pakuiswa kwemafirimu yunifomu uye kugadzira mudziyo. Pamusoro pezvo, iyo substrate's compact size inoita kuti ive yakakodzera kune ese ari maviri ekutsvagisa uye ekugadzira nharaunda, achibvumira kushandiswa kunoshanduka mumhando dzakasiyana dzekushandisa. Nekugadzikana kwayo kwakanyanya kupisa uye kemikari, iyi substrate inopa hwaro hwakavimbika hwekuvandudzwa kwekucheka-kumucheto optoelectronic tekinoroji.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
