CVD SiC Coating
Silicon carbide (SiC) epitaxy
Iyo epitaxial tray, inobata SiC substrate yekukura iyo SiC epitaxial slice, yakaiswa mukamuri yekupindura uye inobata zvakananga wafer.
Iyo yekumusoro hafu-mwedzi chikamu chinotakura chezvimwe zvishongedzo zvekamuri yekupindura yeSic epitaxy midziyo, nepo yepasi hafu-mwedzi chikamu chakabatana nequartz chubhu, ichiunza gasi kutyaira susceptor base kutenderera.iwo anodzora tembiricha uye akaiswa mukamuri rekuita pasina kusangana zvakananga newafer.
Si epitaxy
Iyo tray, inobata Si substrate yekukura Si epitaxial slice, inoiswa mukamuri yekupindura uye yakanangana newafer.
Mhete yepreheating iri pane yekunze mhete yeSi epitaxial substrate tray uye inoshandiswa pakugadzirisa uye kupisa.Inoiswa mukamuri yekupindura uye haibatanidzi zvakananga newafer.
An epitaxial susceptor, inobata Si substrate yekukura Si epitaxial slice, yakaiswa mukamuri yekupindura uye inobata zvakananga iyo wafer.
Epitaxial barrel chinhu chakakosha chinoshandiswa mumhando dzakasiyana-siyana dzekugadzira semiconductor, inowanzo shandiswa muMOCVD michina, ine yakanakisa kugadzikana kwemafuta, makemikari kuramba uye kusapfeka, yakakodzera kwazvo kushandiswa mukupisa kwakanyanya.Inobata mawafers.
| 重结晶碳化硅物理特性 Zvenyama zvimiro zveRecrystallized Silicon Carbide | |
| 性质 / Property | 典型数值 / Typical Value |
| 使用温度 / Tembiricha yekushanda (°C) | 1600°C (neokisijeni), 1700°C (inoderedza nharaunda) |
| SiC 含量 / SiC zvemukati | > 99.96% |
| 自由 Si 含量 / Yemahara Si content | <0.1% |
| 体积密度 / Bulk density | 2.60-2.70 g/cm3 |
| 气孔率 / Inooneka porosity | <16% |
| 抗压强度 / Kudzvanya simba | > 600 MPa |
| 常温抗弯强度 / Kutonhora kukotama simba | 80-90 MPa (20°C) |
| 高温抗弯强度 Simba rekukotama rinopisa | 90-100 MPa (1400°C) |
| 热膨胀系数 / Kuwedzera kweThermal @1500°C | 4.70 10-6/°C |
| 导热系数 / Thermal conductivity @1200°C | 23 W/m•K |
| 杨氏模量 / Elastic modulus | 240 GPA |
| 抗热震性 / Thermal shock resistance | Kunyanya kunaka |
| 烧结碳化硅物理特性 Zvenyama zvimiro zveSintered Silicon Carbide | |
| 性质 / Property | 典型数值 / Typical Value |
| 化学成分 / Chemical Composition | SiC>95%, Si<5% |
| 体积密度 / Bulk Density | >3.07 g/cm³ |
| 显气孔率 / Zviri pachena kuti porosity | <0.1% |
| 常温抗弯强度 / Modulus yekuputika pa20℃ | 270 MPa |
| 高温抗弯强度 / Modulus yekuputika pa1200℃ | 290 MPa |
| 硬度 / Kuoma pa20 ℃ | 2400 Kg/mm² |
| 断裂韧性 / Kuputsika kusimba pa20% | 3.3 MPa · m1/2 |
| 导热系数 / Thermal Conductivity pa1200℃ | 45 w/m .K |
| 热膨胀系数 / Kuwedzera kweThermal pa20-1200℃ | 4.5 1 ×10 -6/℃ |
| 最高工作温度 / Max.working tembiricha | 1400 ℃ |
| 热震稳定性 / Thermal shock resistance pa1200℃ | Kugona |
| CVD SiC 薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiC mafirimu | |
| 性质 / Property | 典型数值 / Typical Value |
| 晶体结构 / Crystal Structure | FCC β phase polycrystalline, kunyanya (111) yakatarisana |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Kuoma 2500 | 维氏硬度 (500g mutoro) |
| 晶粒大小 / Grain SiZe | 2~10μm |
| 纯度 / Chemical Purity | 99.99995% |
| 热容 / Heat Capacity | 640 J·kg-1·K-1 |
| 升华温度 / Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Flexural Strength | 415 MPa RT 4-poindi |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / Thermal Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Thermal Expansion(CTE) | 4.5 × 10-6 K -1 |
Pyrolytic Carbon Coating
Main features
Nzvimbo yacho yakakora uye haina pores.
Kuchena kwepamusoro, kusviba kwemukati <20ppm, kunaka kwemhepo.
Kunyanya kupisa tembiricha, simba rinowedzera nekuwedzera tembiricha yekushandisa, ichisvika pamutengo wepamusoro pa2750 ℃, sublimation pa3600 ℃.
Yakaderera elastic modulus, yakakwira yekupisa conductivity, yakaderera thermal yekuwedzera coefficient, uye yakanakisa kupisa kutyisa kuramba.
Kugadzikana kwekemikari yakanaka, inoshingirira kune acid, alkali, munyu, uye organic reagents, uye haina mhedzisiro pasimbi dzakanyungudutswa, slag, uye zvimwe zvinoparadza media.Haina oxidize zvakanyanya mumhepo iri pasi pe400 C, uye mwero weoxidation unowedzera zvakanyanya pa800 ℃.
Pasina kuburitsa chero gasi patembiricha yakakwira, inogona kuchengetedza vacuum ye10-7mmHg pakutenderedza 1800°C.
Product application
Melting crucible yekubuda mumhepo mune semiconductor indasitiri.
High power electronic tube gedhi.
Brush inobata voltage regulator.
Graphite monochromator yeX-ray uye neutron.
Yakasiyana maumbirwo egraphite substrates uye atomic absorption chubhu coating.
Pyrolytic carbon coating effect pasi pe500X microscope, ine yakasimba uye yakavharwa pamusoro.
CVD Tantalum Carbide Coating
TaC coating ndiyo chizvarwa chitsva chepamusoro tembiricha inodzivirira zvinhu, ine nani yakakwira tembiricha kugadzikana pane SiC.Sekupotera kusingadziviriki, anti-oxidation coating uye kupfeka-resistant coating, inogona kushandiswa munzvimbo iri pamusoro pe2000C, inoshandiswa zvakanyanya muaerospace yekupedzisira-yepamusoro tembiricha inopisa yekupedzisira zvikamu, yechitatu chizvarwa semiconductor single crystal kukura minda.
| 碳化钽涂层物理特性物理特性 Zvenyama zveTaC coating | |
| 密度/ Density | 14.3 (g/cm3) |
| 比辐射率 /Specific emissivity | 0.3 |
| 热膨胀系数/ Thermal yekuwedzera coefficient | 6.3 10/K |
| 努氏硬度 /Kuoma (HK) | 2000 HK |
| 电阻/ Resistance | 1x10-5 Ohm* masendimita |
| 热稳定性 /Thermal kugadzikana | <2500℃ |
| 石墨尺寸变化/Graphite saizi inoshanduka | -10 ~ -20um |
| 涂层厚度/Coating ukobvu | ≥220um yakajairika kukosha (35um±10um) |
Solid Silicon Carbide (CVD SiC)
Solid CVD SILICON CARBIDE zvikamu zvinozivikanwa seyekutanga sarudzo yeRTP/EPI mhete nemabhesi uye plasma etch cavity zvikamu zvinoshanda panzvimbo yakakwirira inodiwa tembiricha yekushanda (> 1500 ° C), zvinodiwa pakuchena zvakanyanya kukwirira (> 99.9995%) uye mashandiro acho akanyanya kunaka kana iyo resistance tol makemikari yakanyanya kukwirira.Zvishandiso izvi hazvina zvikamu zvechipiri pamucheto wezviyo, saka zvikamu zveiyo zvinogadzira mashoma pane zvimwe zvinhu.Pamusoro pezvo, izvi zvikamu zvinogona kucheneswa uchishandisa inopisa HF/HCI nekushatisa kushoma, zvichikonzera mashoma mashoma uye hupenyu hurefu hwebasa.
