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2 ~ 6 inch 4 ° off-angle P-mhando 4H-SiC substrate

2~6 inch 4° off-angle P-mhando 4H-SiC substrate Featured Image
  • 2 ~ 6 inch 4 ° off-angle P-mhando 4H-SiC substrate
  • 2 ~ 6 inch 4 ° off-angle P-mhando 4H-SiC substrate

Tsanangudzo Pfupi:

4° off-angle P-type 4H-SiC substrate is a specific semiconductor material, apo “4° off-angle” inoreva crystal orientation angle yewafer iri 4 degrees off-angle, uye “P-type” inoreva iyo conductivity mhando ye semiconductor. Ichi chinyorwa chine zvakakosha mashandisirwo muindasitiri yesemiconductor, kunyanya muminda yemagetsi emagetsi uye yakakwirira-frequency zvemagetsi.


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Semicera's 2 ~ 6 inch 4 ° off-angle P-mhando 4H-SiC ma substrates akagadzirwa kuti asangane nezvinodiwa zviri kukura zvesimba rekuita-pamusoro uye vagadziri vemidziyo yeRF. Iyo 4 ° off-angle yekutarisa inogonesa optimized epitaxial kukura, ichiita iyi substrate hwaro hwakakodzera hweakasiyana semiconductor zvishandiso, zvinosanganisira MOSFETs, IGBTs, uye diode.

Iyi 2 ~ 6 inch 4 ° off-angle P-mhando 4H-SiC substrate ine yakanakisa zvinhu zvivakwa, zvinosanganisira yakakwirira yekupisa conductivity, kuita kwakanakisa kwemagetsi, uye kusimba kwemakanika kugadzikana. Iyo off-angle orientation inobatsira kuderedza micropipe density uye inosimudzira yakapfava epitaxial layers, iyo yakakosha pakuvandudza mashandiro uye kuvimbika kweiyo yekupedzisira semiconductor mudziyo.

Semicera's 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC substrates inowanikwa mumhando dzakasiyana-siyana, kubva pa 2 inches kusvika 6 inches, kuti isangane nezvinodiwa zvekugadzira zvakasiyana. Ma substrates edu akanyatso kugadzirwa kuti ape yunifomu yedoping mazinga uye emhando yepamusoro hunhu hwepamusoro, kuve nechokwadi chekuti wafer yega yega inosangana neyakaomesesa inodiwa kune epamberi magetsi ekushandisa.

Kuzvipira kwaSemicera kune hutsva uye kunaka kunovimbisa kuti yedu 2 ~ 6 inch 4 ° off-angle P-type 4H-SiC substrates inopa kushanda kwakafanana mumhando dzakasiyana-siyana dzekushandisa kubva kumagetsi emagetsi kusvika kune-high-frequency devices. Ichi chigadzirwa chinopa mhinduro yakavimbika kune chizvarwa chinotevera chesimba-rinoshanda, yepamusoro-inoshanda semiconductors, inotsigira kufambira mberi kwetekinoroji mumaindasitiri akadai semotokari, nharembozha, uye simba rinogoneka.

Saizi-inoenderana zviyero

Size

2-inch

4-inch
Diameter 50.8 mm±0.38 mm 100.0 mm+0/-0.5 mm
Surface Orentation 4°kunanga<11-20>±0.5° 4°kunanga<11-20>±0.5°
Primary Flat Length 16.0 mm±1.5mm 32.5mm±2mm
Secondary Flat Length 8.0 mm±1.5mm 18.0 mm ± 2 mm
Yekutanga Flat Oriental Parallelto <11-20>±5.0° Parallelto<11-20>±5.0c
Secondary Flat Orientation 90 ° CW kubva yekutanga ± 5.0 °, silicon yakatarisana kumusoro 90 ° CW kubva yekutanga ± 5.0 °, silicon yakatarisana kumusoro
Surface Finish C-Face: Optical Polish, Si-Face: CMP C-Chiso:OpticalPolish, Si-Face: CMP
Wafer Edge Beveling Beveling
Kukasharara Kwepamusoro Si-Face Ra <0.2 nm Si-Face Ra <0.2nm
Ukobvu 350.0±25.0um 350.0±25.0um
Polytype 4H 4H
Doping p-Type p-Type

Saizi-inoenderana zviyero

Size

 6-Inch
Diameter 150.0 mm+0/-0.2 mm
Surface Oientation 4°kunanga<11-20>±0.5°
Primary Flat Length 47.5 mm ± 1.5mm
Secondary Flat Length Hapana
Yekutanga Flat Oriental Parallel to <11-20>±5.0°
SecondaryFlat Orientation 90 ° CW kubva yekutanga ± 5.0 °, silicon yakatarisana kumusoro
Surface Finish C-Chiso: Optical Polish, Si-Face:CMP
Wafer Edge Beveling
Kukasharara Kwepamusoro Si-Face Ra <0.2 nm
Ukobvu 350.0±25.0μm
Polytype 4H
Doping p-Type

Raman

2-6 inch 4° off-angle P-mhando 4H-SiC substrate-3

Rocking curve

2-6 inch 4° off-angle P-type 4H-SiC substrate-4

Dislocation density (KOH etching)

2-6 inch 4° off-angle P-mhando 4H-SiC substrate-5

KOH etching mifananidzo

2-6 inch 4° off-angle P-mhando 4H-SiC substrate-6
SiC wafers
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