Semicerainodada nekupa iyo30mm Aluminium Nitride Wafer Substrate, chinhu chepamusoro-tier chakagadzirwa kuti chizadzise zvikumbiro zvemazuva ano zvemagetsi uye optoelectronic application. Aluminium Nitride (AlN) ma substrates ane mukurumbira nekuda kwekunaka kwekupisa kwekupisa uye magetsi ekudzivirira zvinhu, zvichiita kuti ive sarudzo yakanaka yezvishandiso zvepamusoro.
Zvinokosha:
• Exceptional Thermal Conductivity:The30mm Aluminium Nitride Wafer Substrateinozvirumbidza nemafuta ekupisa anosvika 170 W/mK, akanyanya kukwirira kupfuura mamwe ma substrate zvinhu, kuve nechokwadi chekubvisa kupisa kwakanaka mukushandisa-simba repamusoro.
•High Electrical Insulation: Iine akanakisa emagetsi ekudzivirira zvivakwa, iyi substrate inoderedza kuyambuka-kutaura uye kukanganiswa kwechiratidzo, zvichiita kuti ive yakanakira RF uye microwave application.
•Mechanical Simba:The30mm Aluminium Nitride Wafer Substrateinopa hukuru hwemagetsi simba uye kugadzikana, kuve nechokwadi chekugara uye kuvimbika kunyangwe pasi pemamiriro ekushanda akaomarara.
•Zvishandiso Zvakasiyana-siyana: Iyi substrate yakanakira kushandiswa mune akakwira-simba maLED, laser diode, uye RF zvikamu, ichipa hwaro hwakasimba uye hwakavimbika hwemapurojekiti ako anonyanya kudiwa.
•Precision Fabrication: Semicera inova nechokwadi chekuti wafer imwe neimwe substrate inogadzirwa nehupamhi hwepamusoro, ichipa yunifomu ukobvu uye pamusoro pemhando yekusangana neiyo chaiyo miyero yezvigadzirwa zvemagetsi zvepamberi.
Wedzera kugona uye kuvimbika kwemidziyo yako neSemicera's30mm Aluminium Nitride Wafer Substrate. Ma substrates edu akagadzirirwa kuunza mashandiro epamusoro, kuve nechokwadi chekuti ako emagetsi uye optoelectronic masisitimu anoshanda nepaanogona napo. Vimba neSemicera yekucheka-kumucheto zvinhu zvinotungamira indasitiri mumhando uye hunyanzvi.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
