Semicera 3C-SiC Wafer Substrates inogadzirwa kuti ipe yakasimba chikuva chechizvarwa chinotevera magetsi emagetsi uye yakakwirira-frequency zvishandiso. Nemhando yepamusoro yekupisa uye hunhu hwemagetsi, aya ma substrates akagadzirirwa kusangana nezvinodiwa zvehunyanzvi hwemazuva ano.
Iyo 3C-SiC (Cubic Silicon Carbide) chimiro cheSemicera Wafer Substrates inopa yakasarudzika mabhenefiti, anosanganisira yakakwirira yekupisa conductivity uye yakaderera yekuwedzera kwemafuta coefficient zvichienzaniswa nezvimwe semiconductor zvinhu. Izvi zvinovaita sarudzo yakanakisa yemidziyo inoshanda pasi pekupisa kwakanyanya uye nepamusoro-simba mamiriro.
Iine yakakwira magetsi ekupwanya voltage uye yepamusoro kugadzikana kwemakemikari, Semicera 3C-SiC Wafer Substrates inova nechokwadi chekugara kwenguva refu uye kuvimbika. Izvi zvivakwa zvakakosha kune maapplication akadai seyakakwira-frequency radar, solid-state lighting, uye magetsi inverters, uko kushanda nesimba uye kusimba kwakakosha.
Kuzvipira kwaSemicera kune hunhu kunoratidzwa mukunyatso gadzira maitiro e3C-SiC Wafer Substrates yavo, kuve nechokwadi chekufanana uye kuenderana kwese batch. Kunyatsoita uku kunobatsira pakuita kwese uye hupenyu hurefu hwemidziyo yemagetsi yakavakirwa pazviri.
Nekusarudza Semicera 3C-SiC Wafer Substrates, vagadziri vanowana mukana wekucheka-kumucheto zvinhu izvo zvinogonesa kuvandudzwa kwezvinhu zvidiki, zvinokurumidza, uye zvinoshanda zvemagetsi zvinhu. Semicera inoenderera mberi nekutsigira hunyanzvi hwekuvandudza tekinoroji nekupa mhinduro dzakavimbika dzinosangana nezvinoda kuitika zveindasitiri yesemiconductor.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
