Silicon carbide (SiC) single crystal material ine bhendi hombe gap upamhi (~Si 3 nguva), high thermal conductivity (~Si 3.3 nguva kana GaAs ka10), high electron saturation migration rate (~Si 2.5 times), high breakdown magetsi munda (~ Si 10 nguva kana GaAs 5 nguva) uye mamwe maitiro akatanhamara.
Yechitatu chizvarwa semiconductor zvinhu zvinonyanya kusanganisira SiC, GaN, diamond, nezvimwewo, nekuti bhendi gap upamhi (Eg) rakakura kupfuura kana kuenzana ne2.3 electron volts (eV), inozivikanwawo seyakafara bhendi gap semiconductor zvinhu. Zvichienzaniswa neyekutanga neyechipiri chizvarwa semiconductor zvinhu, chizvarwa chechitatu semiconductor zvinhu zvine zvakanakira high thermal conductivity, high breakdown electric field, high saturated electron migration rate uye high bonding simba, izvo zvinogona kuzadzisa zvinodiwa zvitsva zvemazuva ano zvemagetsi tekinoroji. tembiricha, simba guru, high pressure, high frequency uye radiation resistance nemamwe mamiriro akaomarara. Iyo ine zvakakosha zvekushandisa tarisiro muminda yekudzivirira yenyika, ndege, ndege, kuongorora mafuta, kuchengetwa kwemaziso, nezvimwewo, uye inogona kuderedza kurasikirwa kwesimba neanopfuura 50% mumaindasitiri mazhinji ane hunyanzvi senge Broadband kutaurirana, simba rezuva, kugadzira mota, semiconductor lighting, uye smart grid, uye inogona kuderedza vhoriyamu yemidziyo neinopfuura 75%, inova yakakosha mukusimudzira sainzi uye tekinoroji.
Semicera simba rinogona kupa vatengi nemhando yepamusoro Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Mukuwedzera, tinogona kupa vatengi vane homogeneous uye heterogeneous silicon carbide epitaxial sheets; Isu tinogona zvakare kugadzirisa iyo epitaxial pepa zvinoenderana nezvinodiwa chaizvo nevatengi, uye hapana hushoma hwekurongeka huwandu.
WAFERING SECIFICATIONS
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
| Item | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Mapisarema | SI | SI | |
| TTV(GBIR) | ≤6um | ≤6um | |||
| Bow(GF3YFCD)-Absolute Value | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
| Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
| LTV(SBIR) -10mmx10mm | <2μm | ||||
| Wafer Edge | Beveling | ||||
SURFACE FINISH
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-Insulating
| ltem | 8-inch | 6-inch | 4-inch | ||
| nP | n-Pm | n-Mapisarema | SI | SI | |
| Surface Finish | Kaviri divi Optical Polish, Si- Face CMP | ||||
| SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm | (5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm | |||
| Edge Chips | Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm) | ||||
| Indents | Hapana Inobvumirwa | ||||
| Makwara (Si-Face) | Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita | Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita | Uk.≤5,Kuwedzera Kureba≤0.5×wafer dhayamita | ||
| Mitswe | Hapana Inobvumirwa | ||||
| Kusabatanidzwa kumucheto | 3mm | ||||
