Semicera's 4 ", 6", uye 8" N-mhando SiC Ingots inomiririra kubudirira mune semiconductor zvinhu, zvakagadzirirwa kusangana nekuwedzera kwezvinodiwa zvemazuva ano zvemagetsi nemagetsi masisitimu. Iyi ingots inopa hwaro hwakasimba uye hwakasimba hweakasiyana semiconductor application, kuve nechokwadi kuti yakakwana. kushanda uye hupenyu hurefu.
Yedu N-mhando yeSiC ingots inogadzirwa uchishandisa epamberi ekugadzira maitiro ayo anosimudzira maitiro avo emagetsi uye kugadzikana kwekupisa. Izvi zvinoita kuti ive yakanaka kune yakakwirira-simba uye yakakwirira-frequency application, senge inverters, transistors, uye mamwe magetsi emagetsi emagetsi uko kushanda uye kuvimbika kwakakosha.
Iyo chaiyo doping yeiyi ingots inovimbisa kuti inopa inowirirana uye inodzokororwa kuita. Kusaenderana uku kwakakosha kune vanogadzira uye vagadziri vari kusunda miganhu yetekinoroji muminda senge aerospace, mota, uye telecommunications. Semicera's SiC ingots inogonesa kugadzirwa kwemidziyo inoshanda nemazvo pasi pemamiriro akanyanya.
Kusarudza Semicera's N-mhando SiC Ingots zvinoreva kubatanidza zvinhu zvinokwanisa kubata tembiricha yakakwira uye mitoro yemagetsi zvakanyanya nyore. Aya ingots anonyanya kukodzera kugadzira zvinhu zvinoda yakanakisa yekupisa manejimendi uye yakakwirira-frequency mashandiro, akadai seRF amplifiers uye ma module emagetsi.
Nekusarudzira Semicera's 4", 6", uye 8" N-mhando SiC Ingots, urikudyara mune chigadzirwa chinosanganisa zvinhu zvemhando yepamusoro nekunyatso uye nekuvimbika kunodiwa nekucheka-kumucheto semiconductor tekinoroji. Semicera inoramba ichitungamira indasitiri ne kupa zvigadziriso zvitsva zvinofambisa kufambira mberi kwekugadzira zvigadzirwa zvemagetsi.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
