4 ″ 6 ″ Semi-Insulating SiC Substrate

Tsanangudzo Pfupi:

Semi-insulating SiC substrates ndeye semiconductor zvinhu zvine high resistivity, ine resistivity yakakwirira kudarika 100,000Ω · cm. Semi-insulating SiC substrates inonyanya kushandiswa kugadzira microwave RF zvishandiso segallium nitride microwave RF zvishandiso uye yakakwirira maelectron mobility transistors (HEMTs). Midziyo iyi inonyanya kushandiswa mu5G kutaurirana, setiraiti kutaurirana, radar uye mamwe minda.

 

 


Product Detail

Product Tags

Semicera's 4" 6" Semi-Insulating SiC Substrate ndeyepamusoro-mhando zvinhu zvakagadzirirwa kuzadzisa zvinoomesesa zvinodiwa zveRF uye magetsi ekushandisa. Iyo substrate inosanganisa yakanakisa yekupisa conductivity uye yakakwira yekuputsa voltage yesilicon carbide ine semi-inodzivirira zvivakwa, zvichiita kuti ive sarudzo yakanaka yekugadzira advanced semiconductor zvishandiso.

4" 6" Semi-Insulating SiC Substrate yakanyatsogadzirwa kuti ive nechokwadi chehutsanana chakanyanya uye inowirirana semi-insulating performance. Izvi zvinova nechokwadi chekuti substrate inopa inodiwa magetsi ega ega muRF zvishandiso senge amplifiers uye transistors, uku ichipawo mashandiro ekupisa anodiwa kune yakakwirira-simba maapplication. Mhedzisiro ndeye substrate yakasiyana-siyana inogona kushandiswa mumhando dzakasiyana-siyana dzezvigadzirwa zvemagetsi.

Semicera inoziva kukosha kwekupa yakavimbika, isina hurema-isina substrates yeakakosha semiconductor application. Yedu 4" 6" Semi-Insulating SiC Substrate inogadzirwa ichishandisa epamberi ekugadzira matekiniki ayo anoderedza kukanganisa kwekristaro uye kunatsiridza kufanana kwezvinhu. Izvi zvinoita kuti chigadzirwa chitsigire kugadzirwa kwemidziyo ine yakawedzera kuita, kugadzikana, uye hupenyu hwese.

Kuzvipira kwaSemicera kune mhando kunovimbisa yedu 4" 6" Semi-Insulating SiC Substrate inopa yakavimbika uye inowirirana kuita mumhando dzakasiyana dzekushandisa. Kunyangwe iwe uri kugadzira yakakwira-frequency zvishandiso kana simba-rinoshanda simba mhinduro, yedu semi-insulating SiC substrates inopa hwaro hwekubudirira kwechizvarwa chinotevera magetsi.

Basic parameters

Size

6-inch 4-inch
Diameter 150.0mm+0mm/-0.2mm 100.0mm+0mm/-0.5mm
Surface Oientation {0001}±0.2°
Yekutanga Flat Oriental / <1120>±5°
SecondaryFlat Orientation / Silicon yakatarisana kumusoro: 90 ° CW kubva kuPrime flat 士5 °
Primary Flat Length / 32.5 mm 士2.0 mm
Secondary Flat Length / 18.0 mm 士2.0 mm
Notch Orientation <1100>±1.0° /
Notch Orientation 1.0mm+0.25 mm/-0.00 mm /
Notch Angle 90°+5°/-1° /
Ukobvu 500.0um士25.0um
Conductive Type Semi-insulating

Crystal mhando ruzivo

ltem 6-inch 4-inch
Resistivity ≥1E9Q·cm
Polytype Hapana akabvumidzwa
Micropipe Density ≤0.5/cm2 ≤0.3/cm2
Hex Plates nechiedza chakanyanya kusimba Hapana akabvumidzwa
Visual Carbon Inclusions nepamusoro Cumulative area≤0.05%
4 6 Semi-Insulating SiC Substrate-2

Resistivity-Yakayedzwa neNon-contact sheet kuramba.

4 6 Semi-Insulating SiC Substrate-3

Micropipe Density

4 6 Semi-Insulating SiC Substrate-4
SiC wafers

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