Semicera's 4 Inch High Purity Semi-Insulating (HPSI) SiC Double-side Polished Wafer Substrates akagadzirwa kuti asangane nezvinodiwa chaizvo zveindasitiri yesemiconductor. Aya ma substrates akagadzirwa neakasarudzika flatness uye kuchena, achipa yakaringana chikuva chekucheka-kumucheto zvigadzirwa zvemagetsi.
Aya HPSI SiC mawafer anosiyaniswa neawo epamusoro ekupisa kwekupisa uye magetsi ekudzivirira zvivakwa, zvichiita kuti ive sarudzo yakanakisa yeakakwira-frequency uye yakakwirira-simba maapplication. Iyo kaviri-padivi kupelisha maitiro inovimbisa kushoma kwepamusoro roughness, iyo yakakosha mukusimudzira kushanda kwechishandiso uye hupenyu hurefu.
Kuchena kwepamusoro kweSemicera's SiC wafers kunoderedza kuremara uye kusvibiswa, zvichitungamira kune yakakwira goho uye kuvimbika kwechishandiso. Aya ma substrates akakodzera kune akasiyana maapplication, anosanganisira microwave zvishandiso, magetsi emagetsi, uye LED matekinoroji, uko kurongeka uye kusimba kwakakosha.
Iine tarisiro yehunyanzvi uye mhando, Semicera inoshandisa hunyanzvi hwekugadzira hunyanzvi kugadzira mawaferi anosangana nezvinodiwa zvemagetsi zvemazuva ano. Iko kupenya kwemativi maviri hakungogadzirisi simba remagetsi asiwo kunofambisa zvirinani kubatanidzwa nezvimwe semiconductor zvinhu.
Nekusarudza Semicera's 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrates, vagadziri vanogona kukwidziridza mabhenefiti ekusimudzirwa kwekutonga kwemafuta uye kuvharirwa kwemagetsi, vachigadzira nzira yekuvandudzwa kwemidziyo yemagetsi inoshanda uye ine simba. Semicera inoenderera mberi ichitungamira indasitiri nekuzvipira kwayo kumhando uye kufambira mberi kwetekinoroji.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
