4 Inch SiC Substrate N-mhando

Tsanangudzo Pfupi:

Semicera inopa huwandu hwakawanda hwe4H-8H SiC wafers. Kwemakore akawanda, tanga tiri mugadziri uye mutengesi wezvigadzirwa kune semiconductor uye photovoltaic industries. Zvigadzirwa zvedu zvikuru zvinosanganisira: Silicon carbide etch plates, silicon carbide boat trailers, silicon carbide wafer boats (PV & Semiconductor), silicon carbide furnace tubes, silicon carbide cantilever paddles, silicon carbide chucks, silicon carbide matanda, pamwe neCVD SiC coating. TaC coatings. Kuvhara misika zhinji yeEurope neAmerica. Tinotarisira kuve shamwari yako yenguva refu muChina.

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Product Detail

Product Tags

Silicon carbide (SiC) single crystal material ine bhendi hombe gap upamhi (~Si 3 nguva), high thermal conductivity (~Si 3.3 nguva kana GaAs ka10), high electron saturation migration rate (~Si 2.5 times), high breakdown magetsi munda (~ Si 10 nguva kana GaAs 5 nguva) uye mamwe maitiro akatanhamara.

Semicera simba rinogona kupa vatengi nemhando yepamusoro Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Mukuwedzera, tinogona kupa vatengi vane homogeneous uye heterogeneous silicon carbide epitaxial sheets; Isu tinogona zvakare kugadzirisa iyo epitaxial pepa zvinoenderana nezvinodiwa chaizvo nevatengi, uye hapana hushoma hwekurongeka huwandu.

Items	Kugadzirwa	Tsvakurudzo	Dummy
Crystal Parameters
Polytype	4H
Kutadza kwekutarisa pamusoro	<11-20 >4±0.15°
Electrical Parameters
Dopant	n-mhando Nitrogen
Resistivity	0.015-0.025ohm·cm
Mechanical Parameters
Diameter	99.5 - 100mm
Ukobvu	350±25 μm
Primary flat orientation	[1-100]±5°
Primary flat urefu	32.5±1.5mm
Secondary flat position	90° CW kubva kupuraimari flat ±5°. silicon yakatarisana kumusoro
Secondary flat urefu	18±1.5mm
TTV	≤5 μm	≤10 μm	≤20 μm
LTV	≤2 μm(5mm*5mm)	≤5 μm(5mm*5mm)	NA
Bow	-15μm ~ 15μm	-35μm ~ 35μm	-45μm ~ 45μm
Warp	≤20 μm	≤45 μm	≤50 μm
Mberi(Si-face) roughness(AFM)	Ra≤0.2nm (5μm*5μm)
Chimiro
Micropipe density	≤1 ea/cm2	≤5 ea/cm2	≤10 ea/cm2
Metal tsvina	≤5E10atomu/cm2		NA
BPD	≤1500 ea/cm2	≤3000 ea/cm2	NA
TSD	≤500 ea/cm2	≤1000 ea/cm2	NA
Mberi Hunhu
Mberi	Si
Surface finish	Si-face CMP
Zvimedu	≤60ea/wafer (saizi≥0.3μm)	NA
Makwara	≤2ea/mm. Kureba kwekuwedzera ≤Diameter	Cumulative kureba≤2*Diameter	NA
Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa	Hapana		NA
Edge chips/indents/fracture/hex plates	Hapana		NA
Polytype nzvimbo	Hapana	Cumulative area≤20%	Cumulative area≤30%
Front laser marking	Hapana
Back Quality
Back finish	C-chiso CMP
Makwara	≤5ea/mm,Cumulative kureba≤2*Diameter	NA
Kuremara kumashure (kumucheto machipisi / indents)	Hapana
Back roughness	Ra≤0.2nm (5μm*5μm)
Back laser marking	1 mm (kubva kumusoro kumucheto)
Edge
Edge	Chamfer
Packaging
Packaging	Bag remukati rinozadzwa nenitrogen uye bhegi rekunze rinobviswa vacuum. Multi-wafer cassette, epi-yakagadzirira.
* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD.