Semicera's 4”6” Yakakwira Purity Semi-Insulating SiC Ingots dzakagadzirirwa kuzadzisa iwo chaiwo mwero weiyo semiconductor indasitiri. Aya ma ingots anogadzirwa akatarisa kuchena uye kuenderana, zvichiita kuti ive sarudzo yakanaka kune yakakwirira-simba uye yakakwirira-frequency application uko kuita kwakanyanya.
Iyo yakasarudzika zvimiro zveaya maSiC ingots, anosanganisira yakakwira yekupisa yekupisa uye yakanakisa yemagetsi resistivity, inoita kuti ive yakanyanya kukodzera kushandiswa mumagetsi emagetsi uye microwave zvishandiso. Chimiro chavo che semi-insulating chinobvumira kupisa kunoshanda uye kukanganiswa kwemagetsi kushoma, zvichiita kuti zvive zvakanyanya kushanda uye zvakavimbika zvikamu.
Semicera inoshandisa nyika-ye-the-art maitiro ekugadzira kugadzira ingots ine yakasarudzika crystal mhando uye kufanana. Kunyatsojeka uku kunovimbisa kuti ingot yega yega inogona kushandiswa zvakavimbika mumashandisirwo anonzwisa tsitsi, akadai seakakwira-frequency amplifiers, laser diodes, uye zvimwe optoelectronic zvishandiso.
Inowanikwa mune ese 4-inch uye 6-inch saizi, Semicera's SiC ingots inopa kuchinjika kunodiwa kune akasiyana ekugadzira zviyero uye zvinodiwa zvetekinoroji. Ingave yekutsvagisa nekusimudzira kana kugadzirwa kwakawanda, idzi ingots dzinoburitsa kuita uye kusimba kunodiwa neazvino masystem emagetsi.
Nekusarudza Semicera's High Purity Semi-Insulating SiC Ingots, uri kuisa mari muchigadzirwa chinosanganisa advanced material science nehunyanzvi husingaenzaniswi hwekugadzira. Semicera yakatsaurirwa kutsigira hunyanzvi uye kukura kweiyo semiconductor indasitiri, ichipa zvinhu zvinogonesa kusimudzira yekucheka-kumucheto zvigadzirwa zvemagetsi.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
