6-inch LiNbO3 Bonding wafer

Tsanangudzo Pfupi:

Semicera's 6-inch LiNbO3 yakasungwa wafer yakanakira nzira dzepamusoro dzekubatanidza mune optoelectronic zvishandiso, MEMS, uye akasanganiswa maseketi (ICs). Nehunhu hwayo hwepamusoro hwekubatanidza, yakanakira kuwana chaiyo dhizaini kurongeka uye kubatanidzwa, kuve nechokwadi chekuita uye kugona kwesemiconductor zvishandiso. Kuchena kwepamusoro kwewafer kunoderedza kusvibiswa, zvichiita kuti ive sarudzo yakavimbika kune zvikumbiro zvinoda kunyatsojeka.


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Semicera's 6-inch LiNbO3 Bonding Wafer inogadzirwa kuti isangane neyakaomesesa zviyero zveiyo semiconductor indasitiri, ichiunza isingaenzaniswi kuita munzvimbo dzese dzekutsvagisa uye dzekugadzira. Ingave yemhando yepamusoro-yekupedzisira optoelectronics, MEMS, kana yepamusoro semiconductor kurongedza, iyi yekusungirira wafer inopa kuvimbika uye kusimba kunodiwa mukucheka-kumucheto tekinoroji kuvandudza.

Muindasitiri yesemiconductor, iyo 6-inch LiNbO3 Bonding Wafer inoshandiswa zvakanyanya kubatanidza matete akaturikidzana mune optoelectronic zvishandiso, masensa, uye microelectromechanical systems (MEMS). Hunhu hwayo hunoshamisa hunoita kuti ive chinhu chakakosha chezvishandiso zvinoda kunyatsobatanidzwa, senge mukugadzirwa kwemasekete akabatanidzwa (ICs) uye mafotonic zvishandiso. Iko kuchena kwepamusoro kwewafer kunovimbisa kuti chigadzirwa chekupedzisira chinochengetedza kushanda kwakakwana, kuderedza njodzi yekusvibiswa iyo inogona kukanganisa kuvimbika kwechigadzirwa.

Thermal uye magetsi zvinhu zveLiNbO3
Melting point 1250 ℃
Curie tembiricha 1140 ℃
Thermal conductivity 38 W/m/K @ 25 ℃
Coefficient yekuwedzera kupisa (@ 25°C)

//a, 2.0 × 10-6/K

//c,2.2×10-6/K

Resistivity 2×10-6Ω·cm @ 200 ℃
Dielectric constant

εS11/ε0=43, εT11/ε0=78

εS33/ε0=28, εT33/ε0= 2

Piezoelectric nguva dzose

D22=2.04×10-11C/N

D33=19.22×10-11C/N

Electro-optic coefficient

γT33=32 pm/V, γS33=31 pm/V,

γT31=10 pm/V, γS31=8.6 pm/V,

γT22=6.8 pm/V, γS22=3.4 pm/V,

Half-wave voltage, DC
Munda wemagetsi // z, chiedza ⊥ Z;
Nzvimbo yemagetsi // x kana y, chiedza ⊥ z

3.03 KV

4.02 KV

Iyo 6-inch LiNbO3 Bonding Wafer kubva kuSemicera yakanyatso gadzirirwa maapplication epamberi mu semiconductor uye optoelectronics maindasitiri. Inozivikanwa nekunyanya kupfeka kuramba, kugadzikana kwekushisa kwakanyanya, uye kuchena kwakasiyana, ichi chipfuko chekubatanidza chakanakira kugadzirwa kwepamusoro-soro semiconductor, inopa kuvimbika kunogara kwenguva refu uye nemazvo kunyangwe mumamiriro ezvinhu anoda.

Yakagadzirwa neinocheka-kumucheto tekinoroji, iyo 6-inch LiNbO3 Bonding Wafer inovimbisa kushoma kusvibiswa, uko kwakakosha kune semiconductor kugadzirwa kwemaitiro anoda yakakwira mwero wekuchena. Kugadzikana kwayo kwakanakisa kwekushisa kunobvumira kuti ikwanise kumira tembiricha yakakwira pasina kukanganisa kutendeseka kwechimiro, zvichiita kuti ive sarudzo yakavimbika kune yakakwirira-tembiricha bonding application. Pamusoro pezvo, iyo wafer yakasarudzika yekupfeka kuramba inovimbisa kuti inoshanda nguva dzose pamusoro pekushandiswa kwakawedzerwa, ichipa kusimba kwenguva refu uye kuderedza kudiwa kwekugara kuchitsiva.

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Semicera nzvimbo yebasa 2
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