Semicera's 6 Inch N-mhando SiC Wafer inomira kumberi kwesemiconductor tekinoroji. Yakagadzirirwa kuita kwakaringana, wafer iyi inokunda mune yakakwirira-simba, yakakwirira-frequency, uye yakakwirira-tembiricha maapplication, akakosha kune epamberi zvigadzirwa zvemagetsi.
Yedu 6 Inch N-mhando yeSiC wafer inoratidzira yakakwira erekitironi kufamba uye yakaderera pa-resistance, ari akakosha paramita emagetsi emagetsi akadai seMOSFETs, diode, uye zvimwe zvikamu. Izvi zvivakwa zvinogonesa kushanduka kwesimba uye kuderedzwa kwekupisa kupisa, kuwedzera kushanda uye hupenyu hwemagetsi masisitimu.
Semicera's kuomarara kwemhando yekudzora maitiro anovimbisa kuti yega yega SiC wafer inochengetedza yakanakisa yepasi flatness uye kushoma hurema. Uku kunyatsotarisisa kune zvakadzama kunovimbisa kuti mawafers edu anosangana nezvinodiwa zvemaindasitiri akadai semotokari, aerospace, uye nharembozha.
Pamusoro pehukuru hwayo hwemagetsi zvivakwa, iyo N-mhando yeSiC wafer inopa kugadzikana kwekupisa uye kuramba kune tembiricha yepamusoro, zvichiita kuti ive yakanakira nharaunda uko zvinhu zvakajairika zvinogona kutadza. Kugona uku kunonyanya kukosha mumashandisirwo anosanganisira high-frequency uye high-power operations.
Nekusarudza Semicera's 6 Inch N-mhando yeSiC Wafer, uri kuisa mari muchigadzirwa chinomiririra iyo yepamusoro semiconductor innovation. Isu takazvipira kupa zvivharo zvekuvaka zvekucheka-kumucheto zvishandiso, kuve nechokwadi chekuti vatinoshanda navo mumaindasitiri akasiyana vanokwanisa kuwana zvinhu zvakanakisa zvekusimudzira kwavo tekinoroji.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
