Semicera's 6 Inch Semi-Insulating HPSI SiC Wafers akagadzirirwa kusangana neakaomarara zvinodiwa zvemazuva ano semiconductor tekinoroji. Nekuchena kwakasarudzika uye kuenderana, aya mawafer anoshanda sehwaro hwakavimbika hwekugadzira yakakwirira-inoshanda emagetsi zvikamu.
Aya HPSI SiC wafers anozivikanwa nekunaka kwekupisa kwekupisa uye kuvharwa kwemagetsi, izvo zvakakosha pakugadzirisa mashandiro emagetsi emagetsi uye epamusoro-frequency maseketi. Iyo semi-insulating zvivakwa zvinobatsira mukuderedza kukanganiswa kwemagetsi uye nekuwedzera kugona kwechishandiso.
Iyo yemhando yepamusoro yekugadzira nzira inoshandiswa neSemicera inova nechokwadi chekuti wafer yega yega ine yunifomu ukobvu uye kushoma kwepamusoro hurema. Uku kurongeka kwakakosha kune epamberi maapplication akadai seredhiyo frequency zvishandiso, magetsi inverters, uye maLED masisitimu, uko kuita uye kusimba ndizvo zvinhu zvakakosha.
Nekushandisa hunyanzvi hwekugadzira-ye-iyo-hunyanzvi, Semicera inopa mawafer ayo asingangosangana chete asi anodarika zviyero zveindasitiri. Iyo 6-inch saizi inopa kuchinjika mukukwidza kumusoro kugadzirwa, kugovera kune zvese zvekutsvagisa uye zvekutengesa zvekushandisa muchikamu chesemiconductor.
Kusarudza Semicera's 6 Inch Semi-Insulating HPSI SiC Wafers zvinoreva kuisa mari muchigadzirwa chinopa hunoenderana mhando nekuita. Aya mawaferi chikamu chekuzvipira kwaSemicera kusimudzira kugona kwesemiconductor tekinoroji kuburikidza nehunyanzvi hwekugadzira zvinhu uye hunyanzvi hwekuita.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
