6 lnch n-mhando sic substrate

Tsanangudzo Pfupi:

6-inch n-type SiC substrate ndeye semiconductor zvinhu zvinoratidzwa nekushandiswa kwe6-inch wafer size, iyo inowedzera huwandu hwemidziyo inogona kugadzirwa pane imwe wafer pamusoro penzvimbo yakakura, nekudaro ichideredza mutengo-chikamu chemidziyo. . Iko kuvandudza uye kushandiswa kwe6-inch n-mhando yeSiC substrates yakabatsirwa nekufambira mberi kwetekinoroji senge nzira yekukura yeRAF, iyo inoderedza kubviswa nekucheka makristasi pamwe nekutsemuka uye nzira dzakafanana uye makristasi anokura, nekudaro achivandudza kunaka kweiyo substrate. Kushandiswa kweiyi substrate kwakakosha zvikuru mukuvandudza kugadzirwa kwakanaka uye kuderedza mitengo yeSiC magetsi emagetsi.

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Product Detail

Product Tags

Silicon carbide (SiC) single crystal material ine bhendi hombe gap upamhi (~Si 3 nguva), high thermal conductivity (~Si 3.3 nguva kana GaAs ka10), high electron saturation migration rate (~Si 2.5 times), high breakdown magetsi munda (~ Si 10 nguva kana GaAs 5 nguva) uye mamwe maitiro akatanhamara.

Yechitatu chizvarwa semiconductor zvinhu zvinonyanya kusanganisira SiC, GaN, diamond, nezvimwewo, nekuti bhendi gap upamhi (Eg) rakakura kupfuura kana kuenzana ne2.3 electron volts (eV), inozivikanwawo seyakafara bhendi gap semiconductor zvinhu. Zvichienzaniswa neyekutanga neyechipiri chizvarwa semiconductor zvinhu, chizvarwa chechitatu semiconductor zvinhu zvine zvakanakira high thermal conductivity, high breakdown electric field, high saturated electron migration rate uye high bonding simba, izvo zvinogona kuzadzisa zvinodiwa zvitsva zvemazuva ano zvemagetsi tekinoroji. tembiricha, simba guru, high pressure, high frequency uye radiation resistance nemamwe mamiriro akaomarara. Iyo ine zvakakosha zvekushandisa tarisiro muminda yekudzivirira yenyika, ndege, ndege, kuongorora mafuta, kuchengetwa kwemaziso, nezvimwewo, uye inogona kuderedza kurasikirwa kwesimba neanopfuura 50% mumaindasitiri mazhinji ane hunyanzvi senge Broadband kutaurirana, simba rezuva, kugadzira mota, semiconductor lighting, uye smart grid, uye inogona kuderedza vhoriyamu yemidziyo neinopfuura 75%, inova yakakosha mukusimudzira sainzi uye tekinoroji.

Semicera simba rinogona kupa vatengi nemhando yepamusoro Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; Mukuwedzera, tinogona kupa vatengi vane homogeneous uye heterogeneous silicon carbide epitaxial sheets; Isu tinogona zvakare kugadzirisa iyo epitaxial pepa zvinoenderana nezvinodiwa chaizvo nevatengi, uye hapana hushoma hwekurongeka huwandu.

BASIC PRODUCT SECIFICATIONS

Size	6-inch
Diameter	150.0mm+0mm/-0.2mm
Surface Oientation	kubva-axis: 4 ° kuenda <1120> ± 0.5 °
Primary Flat Length	47.5mm1.5 mm
Yekutanga Flat Oriental	<1120>±1.0°
Secondary Flat	Hapana
Ukobvu	350.0um±25.0um
Polytype	4H
Conductive Type	n-mhando

CRESTAL QUALITY SECIFICATIONS

6-inch
Item	P-MOS Giredhi	P-SBD Giredhi
Resistivity	0.015Ω·cm-0.025Ω·cm
Polytype	Hapana akabvumidzwa
Micropipe Density	≤0.2/cm2	≤0.5/cm2
EPD	≤4000/cm2	≤8000/cm2
TED	≤3000/cm2	≤6000/cm2
BPD	≤1000/cm2	≤2000/cm2
TSD	≤300/cm2	≤1000/cm2
SF (Yakayerwa neUV-PL-355nm)	≤0.5% nzvimbo	≤1% nzvimbo
Hex mahwendefa nechiedza chepamusoro	Hapana akabvumidzwa
Visual CarbonInclusions nechiedza chakanyanya	Cumulativearea≤0.05%