Semicera's 8 Inch N-mhando SiC Wafers ari kumberi kweiyo semiconductor innovation, ichipa hwaro hwakasimba hwekuvandudza kwepamusoro-inoshanda michina yemagetsi. Aya mawafer akagadzirwa kuti asangane nezvinoda kuomarara zvemazuva ano emagetsi maapplication, kubva kumagetsi emagetsi kusvika kune yakakwirira-frequency maseketi.
Iyo N-mhando doping mune aya maSiC mawafer anosimudzira mashandiro emagetsi, zvichiita kuti aenderane kune akasiyana maapplication, anosanganisira emagetsi diodes, transistors, uye amplifiers. Iyo yepamusoro conductivity inovimbisa kushomeka kwesimba kurasikirwa uye kushanda kwakanaka, izvo zvakakoshera kune zvishandiso zvinoshanda pakakwirira frequencies uye mazinga emagetsi.
Semicera inoshandisa hunyanzvi hwekugadzira epamberi kugadzira SiC wafers ane yakasarudzika pamusoro pekufanana uye hurema hudiki. Iyi nhanho yehutsanana yakakosha kune maapplication anoda kuenderana kuita uye kusimba, senge mune aerospace, mota, uye nharembozha.
Kubatanidza Semicera's 8 Inch N-mhando SiC Wafers mumutsara wako wekugadzira inopa hwaro hwekugadzira zvinhu zvinokwanisa kumira nharaunda dzakaoma uye tembiricha yakakwira. Aya mawafer akakwana kune maapplication mukushandura simba, RF tekinoroji, uye mamwe minda inoda.
Kusarudza Semicera's 8 Inch N-mhando SiC Wafers zvinoreva kuisa mari muchigadzirwa chinosanganisa zvemhando yepamusoro zvesainzi nehuinjiniya chaihwo. Semicera yakazvipira kufambisira mberi kugona kwesemiconductor tekinoroji, ichipa mhinduro dzinowedzera kugona uye kuvimbika kwemidziyo yako yemagetsi.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
