8lnch n-mhando Conductive SiC Substrate

Semicera's 8 lnch n-mhando Conductive SiC Substrate ndeyekucheka-kumucheto zvinhu zvakagadzirirwa kusangana nekukura kuri kuda kwemagetsi emagetsi uye yakakwirira-inoita semiconductor application. Iyo substrate inosanganisa zvakanakira silicon carbide uye n-mhando conductivity kuendesa isingaenzaniswi kuita mumidziyo inoda yakakwira simba density, kupisa kwemafuta, uye kuvimbika.

Semicera's 8 lnch n-mhando Conductive SiC Substrate yakanyatsogadzirwa kuti ive nechokwadi chemhando yepamusoro uye kuenderana. Iyo inoratidzira yakanakisa yekupisa conductivity yekushanda kwekushisa kupisa, zvichiita kuti ive yakakodzera kune yakakwirira-simba maapplication akadai semagetsi inverters, diodes, uye transistors. Pamusoro pezvo, iyi substrate yakakwira breakdown voltage inoita kuti ikwanise kumirisana nemamiriro ezvinhu, ichipa chikuva chakasimba chepamusoro-inoshanda zvemagetsi.

Semicera inoziva basa rakakosha iro 8 lnch n-mhando Conductive SiC Substrate inotamba mukusimudzira tekinoroji yesemiconductor. Ma substrates edu anogadzirwa achishandisa mamiriro-e-iyo-maitiro maitiro ekuona kushoma density density, iyo yakakosha pakuvandudzwa kwemidziyo inoshanda. Uku kutarisisa kune zvakadzama kunogonesa zvigadzirwa zvinotsigira kugadzirwa kwechizvarwa chinotevera magetsi nekuita kwepamusoro uye kusimba.

Yedu 8 lnch n-mhando Conductive SiC Substrate yakagadzirirwawo kusangana nezvinodiwa zvakasiyana-siyana zvekushandisa kubva kumotokari kuenda kusimba rinodzokororwa. n-mhando conductivity inopa midziyo yemagetsi inodiwa kugadzira midziyo yemagetsi inoshanda, ichiita iyi substrate chikamu chakakosha mukuchinja kune mamwe magetsi-anoshanda matekinoroji.

PaSemicera, takazvipira kupa ma substrates anotyaira hunyanzvi mukugadzira semiconductor. Iyo 8 lnch n-mhando Conductive SiC Substrate chiratidzo chekuzvipira kwedu kune mhando uye kugona, kuve nechokwadi chekuti vatengi vedu vanogashira zvakanakisa zvinhu zvekushandisa kwavo.