Semicera High PuritySilicon Carbide Paddleinogadzirwa zvine hungwaru kuti isangane nezvido zvakaomesesa zvemazuva ano semiconductor kugadzira maitiro. IzviSiC Cantilever Paddleinokunda munzvimbo dzepamusoro-tembiricha, ichipa kugadzikana kusingaenzaniswi kwekupisa uye kusimba kwemagetsi. Iyo SiC Cantilever chimiro chakavakirwa kumirisana nemamiriro akanyanya, kuve nechokwadi chekuvimbika wafer kubata mukati meakasiyana maitiro.
Imwe yeakakosha innovations yeSiC Paddledhizaini yayo isingaremi asi yakasimba, iyo inobvumira kubatanidzwa nyore muhurongwa huripo. Yayo yakanyanya kupisa conductivity inobatsira kuchengetedza wafer kugadzikana panguva dzakaoma nhanho senge etching uye deposition, kuderedza njodzi yekukuvadzwa kwewafer uye kuve nechokwadi chepamusoro chekugadzira goho. Iko kushandiswa kwe-high-density silicon carbide mukuvaka kwepadhi kunowedzera kuramba kwayo kusakara uye kubvaruka, ichipa hupenyu hwakareba hwekushanda uye kuderedza kudiwa kwekugara kuchitsiviwa.
Semicera inoisa simbiso yakasimba pakuvandudza, kuendesa aSiC Cantilever Paddleizvo hazvingosangana chete asi zvinopfuura mwero weindasitiri. Iyi paddle yakagadziridzwa kuti ishandiswe muakasiyana semiconductor maapplication, kubva pakuiswa kuenda kune etching, uko kurongeka uye kuvimbika kwakakosha. Nekubatanidza iyi tekinoroji yekucheka-kumucheto, vagadziri vanogona kutarisira kuvandudzwa kwehunyanzvi, kuderedzwa kwemitengo yekugadzirisa, uye inowirirana mhando yechigadzirwa.
Zvenyama zvimiro zveRecrystallized Silicon Carbide | |
Property | Typical Value |
Tembiricha yekushanda (°C) | 1600°C (neokisijeni), 1700°C (inoderedza nharaunda) |
SiC content | > 99.96% |
Free Si content | <0.1% |
Bulk density | 2.60-2.70 g/cm3 |
Inooneka porosity | <16% |
Kumanikidza simba | > 600 MPa |
Kutonhora kukotama simba | 80-90 MPa (20°C) |
Simba rekukotama rinopisa | 90-100 MPa (1400°C) |
Kuwedzera kupisa @1500°C | 4.70 10-6/°C |
Thermal conductivity @1200°C | 23 W/m•K |
Elastic modulus | 240 GPA |
Thermal shock resistance | Kunyanya kunaka |