Ne Semicera'sInP uye CdTe Substrate, unogona kutarisira hukuru hwepamusoro uye hutsanana hwakagadzirwa kuti husangane nezvinodiwa zvemaitiro ako ekugadzira. Ingave ndeye photovoltaic application kana semiconductor zvishandiso, ma substrates edu akagadzirwa kuti ave nechokwadi chekuita kwakanyanya, kusimba, uye kuenderana. Semutengesi akavimbika, Semicera yakazvipira kuendesa yepamusoro-soro, customizable substrate mhinduro dzinotyaira hunyanzvi mune zvemagetsi uyezve simba remagetsi zvikamu.
Crystalline uye Electrical Properties✽1
| Type | Dopant | EPD (cm–2(Ona pazasi A.) | DF (Defect Free) nzvimbo (cm2, Ona pazasi B.) | c/（ccm–3） | Mobilit (y cm2/Vs） | Resistivit (y Ω・cm) |
| n | Sn | ≦5×104 ≦1×104 ≦5×103 | ────── | (0.5〜6)×1018 | ────── | ────── |
| n | S | ────── | ≧ 10 (59.4%) ≧ 15 (87%）.4 | (2〜10)×1018 | ────── | ────── |
| p | Zn | ────── | ≧ 10 (59.4%) ≧ 15 (87%). | (3〜6)×1018 | ────── | ────── |
| SI | Fe | ≦5×104 ≦1×104 | ────── | ────── | ────── | ≧ 1 × 106 |
| n | hapana | ≦5×104 | ────── | ≦1×1016 | ≧ 4×103 | ────── |
✽1 Zvimwe zvinotsanangurwa zviripo pakukumbira.
A.13 Mapoinzi Avhareji
1. Dislocation etch gomba density inoyerwa pamapoinzi gumi nematatu.
2. Nharaunda yakayerwa yevhareji ye dislocation densities inoverengwa.
B.DF Nzvimbo Yekuyera (Mune Nyaya Yenzvimbo Yevimbiso)
1. Dislocation etch gomba densities ye69 points inoratidzwa sekurudyi inoverengwa.
2. DF inotsanangurwa seEPD isingasviki 500cm–2
3. Maximum DF nzvimbo yakayerwa nenzira iyi i17.25cm2
InP Imwe Crystal Substrates Yakajairwa Madiro
1. Oriental
Kutarisa pamusoro (100)±0.2º kana (100)±0.05º
Surface off orientation inowanikwa pakukumbira.
Kutariswa kwefurati YE: (011)±1º kana (011)±0.1º IF : (011)±2º
Cleaved OF inowanikwa pakukumbira.
2. Laser yekumaka yakavakirwa paSEMI chiyero inowanikwa.
3. Individual package, pamwe nepasuru muN2 gasi zviripo.
4. Etch-uye-pack muN2 gasi inowanikwa.
5. Rectangular wafers anowanikwa.
Pamusoro pekutsanangurwa ndeye JX 'yakajairwa.
Kana mamwe maitiro achidikanwa, ndapota tibvunze isu.
Orientation
