LiNbO3 Bonding wafer

Tsanangudzo Pfupi:

Lithium niobate crystal ine yakanakisa electro-optical, acousto-optical, piezoelectric, uye nonlinear zvivakwa. Lithium niobate crystal inokosha yakawanda yakawanda yekristal ine yakanaka isina mutsara optical properties uye yakakura isina mutsara optical coefficient; inogonawo kuwana noncritical phase matching. Sekristaro ye electro-optical, yakashandiswa seyakakosha optical waveguide material; se crystal yepiezoelectric, inogona kushandiswa kugadzira mafirita epakati uye akaderera SAW mafirita, simba repamusoro-soro rinopikisa ultrasonic transducers, etc. Doped lithium niobate zvinhu zvinoshandiswawo zvakanyanya.

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Semicera's LiNbO3 Bonding Wafer yakagadzirirwa kusangana nepamusoro zvinodiwa zvepamberi semiconductor kugadzira. Nezvimiro zvayo zvakasarudzika, zvinosanganisira kukwirira kupfeka kuramba, kugadzikana kwekushisa kwakanyanya, uye kuchena kwakatanhamara, iyi wafer yakanakira kushandiswa mumashandisirwo anoda kunyatsoita uye kushanda kwenguva refu.

Muindasitiri yesemiconductor, LiNbO3 Bonding Wafers anowanzo shandiswa kubatanidza matete akaturikidzana mune optoelectronic zvishandiso, masensa, uye advanced ICs. Ivo vanonyanya kukoshesa mufotonics uye MEMS (Micro-Electromechanical Systems) nekuda kweakanakisa dielectric zvivakwa uye kugona kutsungirira mamiriro ekushanda akaomarara. Semicera's LiNbO3 Bonding Wafer inogadzirwa kuti itsigire chaiyo layer bonding, inosimudzira kuita kwese uye kuvimbika kwemidziyo yesemiconductor.

Thermal uye magetsi zvinhu zveLiNbO3
Melting point	1250 ℃
Curie tembiricha	1140 ℃
Thermal conductivity	38 W/m/K @ 25 ℃
Coefficient yekuwedzera kupisa (@ 25°C)	//a, 2.0 × 10^-6/K //c,2.2×10^-6/K
Resistivity	2×10^-6Ω·cm @ 200 ℃
Dielectric constant	εS11/ε0=43, εT11/ε0=78 εS33/ε0=28, εT33/ε0= 2
Piezoelectric nguva dzose	D₂₂=2.04×10^-11C/N D₃₃=19.22×10^-11C/N
Electro-optic coefficient	γT₃₃=32 pm/V, γS₃₃=31 pm/V, γT₃₁=10 pm/V, γS₃₁=8.6 pm/V, γT₂₂=6.8 pm/V, γS₂₂=3.4 pm/V,
Half-wave voltage, DC Munda wemagetsi // z, chiedza ⊥ Z; Nzvimbo yemagetsi // x kana y, chiedza ⊥ z	3.03 KV 4.02 KV

Yakagadzirwa uchishandisa emhando yepamusoro zvinhu, iyo LiNbO3 Bonding Wafer inovimbisa kutendeseka kunoenderana kunyangwe mumamiriro akanyanya. Kugadzikana kwayo kwepamusoro kwekushisa kunoita kuti ive yakakosha kune nharaunda dzinosanganisira tembiricha yakakwira, senge iyo inowanikwa mune semiconductor epitaxy process. Pamusoro pezvo, kuchena kwakanyanya kwewaferi kunovimbisa kushomeka kusvibiswa, zvichiita kuti ive sarudzo yakavimbika kune yakakosha semiconductor application.

PaSemicera, takazvipira kupa indasitiri-inotungamira mhinduro. Yedu LiNbO3 Bonding Wafer inopa kusimba kusingaenzaniswi uye kugona kwepamusoro-soro kune maapplication anoda kuchena kwepamusoro, kuramba kupfeka, uye kugadzikana kwekupisa. Ingave yepamberi semiconductor kugadzirwa kana humwe hunyanzvi matekinoroji, iyi wafer inoshanda sechinhu chakakosha chekucheka-kumucheto kugadzira mudziyo.