Hupenyu Hwakareba SiC Yakaputirwa Graphite Inotakura YeSolar Wafer

Hupenyu Hwakareba SiC Yakavharwa Graphite Inotakura YeSolar Wafer Featured Image

Tsanangudzo Pfupi:

Silicon carbide rudzi rutsva rwekeramics ine yakakwira mutengo kuita uye yakanakisa zvinhu zvivakwa. Nekuda kwezvimiro zvakaita sesimba rakakwirira uye kuoma, kukwirira tembiricha kuramba, hukuru hwekupisa conductivity uye kemikari corrosion kuramba, Silicon Carbide inogona kumirisana nemakemikari ese epakati. Naizvozvo, SiC inoshandiswa zvakanyanya mumigodhi yemafuta, makemikari, muchina uye airspace, kunyangwe simba renyukireya nemauto vane zvavanoda kuSIC. Imwe yakajairika application yatinogona kupa zvindori zvechisimbiso zvepombi, vharafu uye nhumbi dzekudzivirira nezvimwe.

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Product Detail

Product Tags

Zvakanakira

High tembiricha oxidation kuramba
Yakanakisa Corrosion resistance
Zvakanaka Abrasion kuramba
High coefficient yekupisa conductivity
Self-lubricity, low density
High kuoma
Customized dhizaini.

Applications

-Kupfeka-inodzivirira Munda: gwenzi, ndiro, jecha rinoputika nozzle, dutu remhepo, dhiramu rekukuya, nezvimwe ...
-Yakakwira Temperature Munda: siC Slab, Kudzima Tube Furnace, Radiant Tube, crucible, Heating Element, Roller, Beam, Heat Exchanger, Cold Air Pipe, Burner Nozzle, Thermocouple Dziviriro Tube, SiC chikepe, Kiln Car Structure, Setter, zvichingodaro.
-Silicon Carbide Semiconductor: SiC wafer chikepe, sic chuck, sic paddle, sic kaseti, sic diffusion chubhu, wafer fork, suction ndiro, gwara, zvichingodaro.
-Silicon Carbide Seal Munda: marudzi ese ekuisa chisimbiso mhete, kutakura, bushing, nezvimwe.
-Photovoltaic Munda: Cantilever Paddle, Grinding Barrel, Silicon Carbide Roller, nezvimwewo.
-Lithium Battery Field

WAFER (1)

WAFER (2)

Zvenyama Zvimiro zveSiC

Property	Value	Nzira
Density	3.21 g/cc	Sink-float uye dimension
Kupisa chaiko	0.66 J/g °K	Pulsed laser flash
Flexural simba	450 MPa560 MPa	4 point bend, RT4 point bend, 1300°
Kutsemuka kuomarara	2.94 MPa m1/2	Microindentation
Kuoma	2800	Vicker's, 500g mutoro
Elastic ModulusYoung's Modulus	450 GPA430 GPA	4 pt bend, RT4 pt bend, 1300 °C
Saizi yezviyo	2 – 10 µm	SEM

Thermal Properties yeSiC

Thermal Conductivity	250 W/m °K	Laser flash nzira, RT
Kuwedzera kweThermal (CTE)	4.5 x 10-6 °K	Tembiricha yemumba kusvika 950 °C, silica dilatometer

Technical Parameters

Item	Unit	Data
Item	Unit	RBSiC(SiSiC)	NBSiC	SSiC	RSiC	OSiC
SiC content	%	85	75	99	99.9	≥99
Yemahara silicon yemukati	%	15	0	0	0	0
Max sevhisi tembiricha	℃	1380	1450	1650	1620	1400
Density	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2.75	2.75-2.85
Open porosity	%	0	13-15	0	15-18	7-8
Kupeta simba 20 ℃	Мpa	250	160	380	100	/
Kupeta simba 1200 ℃	Мpa	280	180	400	120	/
Modulus ye elasticity 20 ℃	Gpa	330	580	420	240	/
Modulus ye elasticity 1200 ℃	Gpa	300	/	/	200	/
Thermal conductivity 1200 ℃	W/mK	45	19.6	100-120	36.6	/
Coefficient yekuwedzera kwekushisa	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

Iyo CVD silicon carbide coating pamusoro pekunze kweiyo recrystallized silicon carbide ceramic zvigadzirwa zvinogona kusvika pakuchena kweinopfuura 99.9999% kusangana nezvinodiwa nevatengi muindasitiri yesemiconductor.