Kushandiswa kweTaC yakavharwa magirafu zvikamu

CHIKAMU/1

Crucible, chibatiso chembeu uye chindori chekutungamira muSiC uye AIN single crystal furnace zvakarimwa nePVT nzira.

Sezvinoratidzwa muMufananidzo 2 [1], kana nzira yekufambisa mhute yemuviri (PVT) inoshandiswa kugadzira SiC, kristaro yembeu iri munzvimbo ine tembiricha yakaderera, SiC mbishi iri munzvimbo ine tembiricha yakanyanya (pamusoro pe2400.℃), uye iyo mbishi inowora kugadzira SiXCy (kunyanya kusanganisira Si, SiC₂, Si₂C, nezvimwewo). Iyo vapor phase zvinhu inotakurwa kubva kunzvimbo yepamusoro yekupisa kuenda kune yekristaro yembeu munzvimbo yakaderera tembiricha, forming mhodzi nuclei, kukura, uye kugadzira makristasi ega. Zvishandiso zvemumunda zvinopisa zvinoshandiswa mukuita uku, senge crucible, flow guide ring, seed crystal holder, zvinofanirwa kushingirira pakupisa kwakanyanya uye hazvizosvibisa SiC mbishi zvinhu uye SiC single crystals. Saizvozvo, izvo zvinodziya zvinhu mukukura kweAlN makristasi ega anofanirwa kupesana neAl vapor, N.₂ngura, uye inoda kuve nekushisa kwakanyanya eutectic (pamwe AlN) kupfupisa nguva yekugadzirira kwekristaro.

Zvakaonekwa kuti SiC[2-5] uye AlN[2-3] yakagadzirirwa naTaC yakavharwagraphite thermal field materials yaive yakachena, inenge isina kabhoni (oxygen, nitrogen) nezvimwe zvitsvina, kushomeka kwemupendero, kushomeka kwekudzivirira mudunhu rega rega, uye density yemicropore uye etching gomba density zvakaderedzwa zvakanyanya (mushure meKOH etching), uye mhando yekristaro. yakavandudzwa zvikuru. Pamusoro pe,TaC crucibleKurasikirwa kwehuremu kunenge zero, kutaridzika hakuparadzi, kunogona kudzokororwa (hupenyu hunosvika 200h), hunogona kuvandudza kusimba uye kushanda kweiyo imwe chete kristaro kugadzirira.

FIG. 2. (a) Schematic diagram yeSiC single crystal ingot inokura mudziyo nePVT nzira
(b) PamusoroTaC yakavharwambeu bracket (kusanganisira SiC mbeu)
(c)TAC-yakavharwa graphite gwara mhete

CHIKAMU/2

MOCVD GaN epitaxial layer inokura hita

Sezvinoratidzwa muMufananidzo 3 (a), MOCVD GaN kukura ikemikari vapor deposition tekinoroji inoshandisa organometrical decomposition reaction kuti ikure mafirimu matete nemhute epitaxial kukura. Kunyatsoita tembiricha uye kufanana mugomba kunoita kuti hita ive iyo inonyanya kukosha chikamu cheMOCVD michina. Kunyangwe iyo substrate inogona kupisa nekukurumidza uye yakafanana kwenguva yakareba (pasi pekudzokorora kutonhora), kugadzikana pakupisa kwakanyanya (kupokana nekuora gasi) uye kuchena kwefirimu kuchakanganisa zvakananga kunaka kweiyo firimu deposition, ukobvu kusimba, uye kushanda kwechip.

Kuti uvandudze kushanda uye kudzokorodza kushanda zvakanaka kweiyo heater muMOCVD GaN yekukura system,TAC-yakavharwagirafu hita yakaunzwa zvinobudirira. Kuenzaniswa neGaN epitaxial layer inokura neyakajairwa heater (ichishandisa pBN coating), GaN epitaxial layer inokura neTaC heater ine inenge yakafanana sekristaro chimiro, ukobvu kufanana, hurema hwemukati, doping yekusachena uye kusvibiswa. Mukuwedzera, theTaC coatingine yakaderera resistivity uye kuderera kwepasi emissivity, iyo inogona kuvandudza kushanda uye kufanana kweiyo hita, nokudaro kuderedza kushandiswa kwesimba uye kurasikirwa kwekupisa. Iyo porosity yekuputira inogona kugadziridzwa nekudzora maitiro maparamita kuti awedzere kuvandudza iwo radiation maitiro eiyo hita uye kuwedzera hupenyu hwayo hwesevhisi [5]. Zvakanakira izvi zvinoitaTaC yakavharwagraphite heaters sarudzo yakanakisa yeMOCVD GaN yekukura masisitimu.

FIG. 3. (a) Schematic diagram yeMOCVD device yeGaN epitaxial kukura
(b) Yakaumbwa TAC-yakavharwa graphite heater yakaiswa muMOCVD setup, isingabatanidzi chigadziko uye bracket (mufananidzo unoratidza chigadziko uye bracket mukupisa)
(c) TAC-yakavharwa graphite heater mushure me17 GaN epitaxial kukura. [6]

CHIKAMU/3

Yakavharidzirwa susceptor ye epitaxy (wafer carrier)

Wafer carrier chinhu chakakosha chechimiro chegadziriro yeSiC, AlN, GaN uye mamwe echitatu kirasi semiconductor wafers uye epitaxial wafer kukura. Mazhinji evatakuri vewafer akagadzirwa negraphite uye akaputirwa neSiC coating kuti arambe corrosion kubva kune process magasi, ine epitaxial tembiricha ye1100 kusvika 1600.°C, uye kushorwa kwekupokana kweyekudzivirira kunobata basa rakakosha muhupenyu hwemutakuri wewafer. Mhedzisiro yacho inoratidza kuti corrosion rate yeTaC inononoka ka6 pane SiC mune yakanyanya tembiricha ammonia. Pakupisa kwehydrogen tembiricha, iyo corrosion rate inotopfuura ka10 inononoka kupfuura SiC.

Zvakaratidzwa nekuedza kuti matireyi akafukidzwa neTaC anoratidza kuenderana zvakanaka muchiedza chebhuruu GaN MOCVD maitiro uye haaunze tsvina. Mushure mekugadzirisa kushomeka kwemaitiro, led dzakakura dzichishandisa TaC vatakuri vanoratidza kuita kwakafanana uye kufanana seyakajairwa SiC vatakuri. Naizvozvo, hupenyu hwesevhisi yeTAC-yakavharwa pallets iri nani pane iyo isina dombo inki uyeSiC yakavharwagraphite pallets.