Chii chinonzi CVD SiC
Chemical vapor deposition (CVD) ivacuum deposition process inoshandiswa kugadzira yakakwirira-kuchena yakasimba zvinhu. Iyi nzira inowanzo shandiswa mumunda wekugadzira semiconductor kugadzira mafirimu akatetepa pamusoro pemawafers. Mukugadzira SiC neCVD, iyo substrate inoratidzwa kune imwe kana kupfuura inovhuvhuta precursors, iyo inobata kemikari pamusoro peiyo substrate kuisa iyo inodiwa SiC deposit. Pakati penzira dzakawanda dzekugadzirira SiC zvinhu, zvigadzirwa zvakagadzirirwa nemakemikari vapor deposition zvine yakakwirira kufanana uye kuchena, uye nzira ine yakasimba process controllability.
Zvishandiso zveCVD SiC zvakanyanyokodzera kushandiswa muindasitiri yesemiconductor inoda zvemhando yepamusoro-performance zvinhu nekuda kwemusanganiswa wavo wakasiyana wemhando yepamusoro yekupisa, magetsi nemakemikari. CVD SiC components anoshandiswa zvakanyanya mu etching equipment, MOCVD equipment, Si epitaxial equipment uye SiC epitaxial equipment, kukurumidza kupisa kwekupisa michina uye mamwe minda.
Pakazere, chikamu chikuru chemusika cheCVD SiC zvikamu chiri etching michina yemidziyo. Nekuda kwekudzika kwayo reactivity uye conductivity kune chlorine- uye fluorine-ine etching magasi, CVD silicon carbide chinhu chakanakira zvinhu senge mhete dzekutarisa muplasma etching michina.
CVD silicon carbide components in etching equipment zvinosanganisira mhete dzekutarisa, magasi ekugeza misoro, matireyi, mhete dzepamucheto, etc. Kutora mhete yekutarisa semuenzaniso, mhete yekutarisa chinhu chakakosha chakaiswa kunze kwechifukidziro uye zvakananga kusangana newafer. Nekushandisa voltage kune mhete kuti itarise iyo plasma inopfuura nepakati pemhete, iyo plasma inotariswa pane wafer kuti ivandudze kufanana kwekugadzirisa.
Mhete dzechinyakare dzekutarisa dzakagadzirwa nesilicon kana quartz. Nekufambira mberi kweiyo yakabatanidzwa yedunhu miniaturization, kudiwa uye kukosha kwekuita etching maitiro mune yakabatanidzwa dunhu kugadzira kuri kuwedzera, uye simba uye simba re etching plasma rinoramba richiwedzera. Kunyanya, simba replasma rinodiwa mune capacitively yakabatanidzwa (CCP) plasma etching michina yakakwira, saka chiyero chekushandisa chekutarisa mhete dzakagadzirwa nesilicon carbide zvinhu zviri kuwedzera. Iyo schematic diagiramu yeCVD silicon carbide yekutarisa mhete inoratidzwa pazasi:
Nguva yekutumira: Jun-20-2024