Chimiro chechimiro uye zvimiro zve sintered silicon carbide pasi pekumanikidzwa kwemhepo

【 Pfupiso tsananguro 】 Mumazuva ano C, N, B uye mamwe asiri e-oxide epamusoro-tekinoroji refractory mbishi zvinhu, mumhepo kumanikidza sinteredsilicon carbideyakakura uye ine mari, uye inogona kunzi emery kana refractory jecha. Puresilicon carbideikristaro isina ruvara inoonekera. Saka chii chinonzi chimiro uye maitiro esilicon carbide?

 

Material structure of atmospheric pressure sinteredsilicon carbide:

Mhepo yemhepo yakanyurasilicon carbideinoshandiswa muindasitiri ndeyechiedza yero, yegirini, yebhuruu uye dema zvinoenderana nerudzi uye zviri mukati metsvina, uye kuchena kwakasiyana uye kujeka kwakasiyana. Iyo silicon carbide crystal chimiro chakakamurwa kuita matanhatu-izwi kana madhaimani akaumbwa plutonium uye cubic plutonium-sic. Plutonium-sic inoumba kwakasiyana deformation nekuda kwekusiyana kwakarongedza kwekabhoni uye maatomu esilicon muchimiro chekristaro, uye anopfuura makumi manomwe emhando dzedeformation awanikwa. beta-SIC inoshandura ku alpha-SIC pamusoro pe 2100. Iyo inoshandiswa mukugadzirwa kwesilicon carbide inonatswa nejecha repamusoro requartz uye petroleum coke muvira rekudzivirira. Yakanatswa silicon carbide zvidhinha yakapwanyika, acid-base kuchenesa, kupatsanurwa kwemagineti, kuongorora kana kusarudzwa kwemvura kugadzira zvakasiyana siyana saizi zvigadzirwa.

 

Material maitiro ekumanikidzwa kwemhepoSintered silicon carbide:

Silicon carbide ine yakanaka kugadzikana kwemakemikari, kupisa kwekushisa, kuwedzera kwemafuta ekuwedzera, kusapfeka, saka kunze kwekushandisa abrasive, kune zvakawanda zvinoshandiswa: Semuyenzaniso, iyo silicon carbide poda yakaputirwa pamadziro emukati eturbine impeller kana cylinder block ine. hurongwa hunokosha, hunogona kuvandudza kupikisa kupfeka uye kuwedzera hupenyu hwe1 kusvika ku2 nguva. Yakagadzirwa nekupisa-inodzivirira, saizi diki, huremu huremu, kusimba kwepamusoro-giredhi refractory zvinhu, kushanda nesimba kwakanaka kwazvo. Yakaderera-giredhi silicon carbide (kusanganisira inosvika 85% SiC) yakanakisa deoxidizer yekuwedzera simbi yekumhanya uye kudzora zviri nyore kuumbwa kwemakemikari kuvandudza kunaka kwesimbi. Pamusoro pezvo, mhepo yemuchadenga sintered silicon carbide inoshandiswawo zvakanyanya mukugadzira zvikamu zvemagetsi zvesilicon carbon rods.

Silicon carbide yakaoma zvikuru. Morse kuomarara i9.5, yechipiri chete kune dhaimani rakaomarara renyika (10), iri semiconductor ine yakanakisa thermal conductivity, inogona kuramba oxidation pakupisa kwakanyanya. Silicon carbide ine angangoita makumi manomwe emhando dzecrystalline. Plutonium-silicon carbide isomeri yakajairika inoumba patembiricha inopfuura 2000 uye ine hexagonal crystalline chimiro (yakafanana newurtzite). Sintered silicon carbide pasi pekumanikidzwa kwemhepo

 

Kushandiswa kwesilicon carbidemune semiconductor indasitiri

Iyo silicon carbide semiconductor indasitiri chain inonyanya kusanganisira silicon carbide yakakwirira-kuchena poda, imwe chete crystal substrate, epitaxial sheet, masimba emagetsi, module kurongedza uye terminal application.

1. Single crystal substrate Single crystal substrate ndeye semiconductor inotsigira zvinhu, conductive zvinhu uye epitaxial kukura substrate. Parizvino, nzira dzekukura dzeSiC single crystal dzinosanganisira nzira yekufambisa mhute yemuviri (PVT nzira), nzira yemvura (LPE nzira), uye tembiricha yepamusoro yemakemikari vapor deposition nzira (HTCVD nzira). Sintered silicon carbide pasi pekumanikidzwa kwemhepo

2. Epitaxial sheet Silicon carbide epitaxial sheet, silicon carbide sheet, single crystal film (epitaxial layer) ine hutungamiri hwakafanana nekristal substrate ine zvimwe zvinodiwa zvesilicon carbide substrate. Mumashandisirwo anoshanda, yakakura band gap semiconductor zvishandiso zvinenge zvese zvinogadzirwa muiyo epitaxial layer, uye iyo silicon chip pachayo inongoshandiswa seiyo substrate, kusanganisira iyo substrate yeGaN epitaxial layer.

3. High-purity silicon carbide powder High-purity silicon carbide powder ndiyo inoshandiswa pakukura kwesilicon carbide single crystal nePVT nzira, uye kuchena kwechigadzirwa kunobata zvakananga kukura kwekukura uye magetsi maitiro esilicon carbide single crystal.

4. Chigadzirwa chemagetsi isimba rakafara-bhendi rakagadzirwa nesilicon carbide zvinhu, iyo ine maitiro ekushisa kwepamusoro, kukwirira kwepamusoro uye kushanda kwakanyanya. Zvinoenderana nechimiro chekushandisa chechishandiso, iyo SiC magetsi ekupa mudziyo inonyanya kusanganisira diode yemagetsi uye simba switch chubhu.

5. Terminal In chechitatu-chizvarwa semiconductor zvikumbiro, nesilicon carbide semiconductors vane zvakanakira kuva anopindirana gallium nitride semiconductors. Nekuda kweiyo yakanyanya kupinduka kushanda zvakanaka, yakaderera kudziyisa maitiro, huremu uye zvimwe zvakanaka zveSiC zvishandiso, kudiwa kweiyo indasitiri yepasi kunoramba kuchiwedzera, uye kune maitiro ekutsiva SiO2 zvishandiso.