Silicon carbide (SiC)is an inorganic compound inozivikanwa nokuda kwemaitiro ayo akasiyana. Zvinongoitika SiC, inozivikanwa se moissanite, haiwanzo. Mukushanda kwemaindasitiri,silicon carbideinogadzirwa zvakanyanya nenzira dzekugadzira.
PaSemicera Semiconductor, isu tinowedzera hunyanzvi hwekugadziraemhando yepamusoro SiC hupfu.
Nzira dzedu dzinosanganisira:
Acheson Method:Iyi tsika yechinyakare yekudzikisa carbothermal inosanganisira kusanganisa yakakwirira-kuchena quartz jecha kana yakapwanyika quartz ore ne petroleum coke, graphite, kana anthracite poda. Uyu musanganiswa unobva wapisa kusvika kune tembiricha inopfuura 2000 ° C uchishandisa graphite electrode, zvichikonzera kuumbwa kwea-SiC upfu.
Yakaderera-Tembiricha Carbothermal Kuderedza:Nekubatanidza silica poda yakatsetseka nekabhoni poda uye kuita mhinduro pa1500 kusvika 1800 ° C, tinoburitsa β-SiC hupfu nekuchena kwakawedzera. Iyi nzira, yakafanana neAcheson nzira asi pakudzika kwakadzika, inobereka β-SiC ine chimiro chekristani chakasiyana. Nekudaro, post-processing kubvisa yakasara kabhoni uye silicon dioxide inodiwa.
Silicon-Carbon Direct Reaction:Iyi nzira inosanganisira zvakananga kuita simbi silicon poda nekabhoni poda pa1000-1400 ° C kuti ibudise yakakwirira-kuchena β-SiC upfu. α-SiC poda inoramba iri kiyi mbishi yezvinhu zvesilicon carbide ceramics, nepo β-SiC, ine madhizaini-akaita sedhaimani, yakanakira kunyatso kugaya nekupukuta maapplication.
Silicon carbide inoratidza maviri makuru makristasi mafomu:α uye b. β-SiC, ine cubic crystal system, inoratidzira kumeso-centered cubic lattice kune ese silicon uye kabhoni. Kusiyana neizvi, α-SiC inosanganisira akasiyana mapolytypes akadai se4H, 15R, uye 6H, ine 6H iri iyo inonyanya kushandiswa mumaindasitiri. Kupisa kunokanganisa kugadzikana kwemapolytypes aya: β-SiC yakagadzikana pasi pe1600 ° C, asi pamusoro pekushisa uku, zvishoma nezvishoma inoshandura ku α-SiC polytypes. Semuyenzaniso, 4H-SiC mafomu anenge 2000°C, ukuwo 15R uye 6H polytypes inoda tembiricha iri pamusoro pe2100°C. Zvinoshamisa, 6H-SiC inoramba yakagadzikana kunyangwe kune tembiricha inopfuura 2200 ° C.
PaSemicera Semiconductor, isu takazvipira kusimudzira SiC tekinoroji. Unyanzvi hwedu muSiC coatinguye zviwanikwa zvinova nechokwadi chepamusoro-notch mhando uye kuita kune yako semiconductor application. Ongorora maitiro edu ekucheka-kumucheto mhinduro anogona kusimudzira maitiro ako uye zvigadzirwa.
Nguva yekutumira: Jul-26-2024