1. Muchidimbu
Kupisa, kunozivikanwawo sekuti thermal processing, kunoreva nzira dzekugadzira dzinoshanda pakupisa kwakanyanya, kazhinji kwakakwira kupfuura kunyungudika kwealuminium.
Iyo yekudziya maitiro inowanzoitwa muchoto chepamusoro-tembiricha uye inosanganisira maitiro makuru senge oxidation, kusachena kupararira, uye annealing yekristaro defect kugadzirisa mukugadzira semiconductor.
Oxidation: Inzira iyo silicon wafer inoiswa mumhepo yeoxidants seokisijeni kana mhute yemvura yekupisa-yepamusoro-tembiricha kurapwa, zvichiita kuti kemikari iite pamusoro pesilicon wafer kuumba oxide firimu.
Kusachena diffusion: inoreva kushandiswa kwemafuta ekupisa misimboti pasi petembiricha yakakwira kuunza zvinhu zvisina kuchena musilicon substrate zvinoenderana nezvinodiwa zvemaitiro, kuitira kuti ive neyakagadzika yekugovera kugovera, nekudaro ichichinja magetsi ezvigadzirwa zvesilicon.
Annealing inoreva maitiro ekudziya iyo silicon wafer mushure mekuisirwa ion kugadzirisa hurema hwelatisi hwakakonzerwa nekuisirwa ion.
Kune matatu emhando mhando dzemidziyo inoshandiswa kune oxidation / diffusion / annealing:
- Horizontal furnace;
- Vertical furnace;
- Rapid kupisa choto: kukurumidza kupisa kupisa michina
Nzira dzechinyakare dzekupisa kupisa dzinonyanya kushandisa kwenguva refu-yepamusoro-tembiricha kurapwa kuti ibvise kukuvadzwa kunokonzerwa neiyo ion kudyara, asi zvayakaipira kusakwana kwayo kubviswa kwehurema uye kushomeka activation kushanda kwetsvina yakaiswa.
Pamusoro pezvo, nekuda kwekushisa kwakanyanya kweannealing uye nguva yakareba, kugovaniswa kwetsvina kungangoitika, zvichikonzera huwandu hukuru hwetsvina kuti hupararire uye kutadza kuzadzisa zvinodiwa zvemajunctions asina kudzika uye kupararira kwetsvina.
Kurumidza kupisa kwekupisa kweiyoni-yakasimwa wafers uchishandisa yekukurumidza thermal processing (RTP) midziyo inzira yekurapa kupisa iyo inopisa wafer yese kune imwe tembiricha (kazhinji 400-1300 ° C) munguva pfupi kwazvo.
Kuenzaniswa nechoto chekupisa annealing, ine zvakanakira zvishoma kupisa bhajeti, diki diki rekufamba kwetsvina munzvimbo yedoping, kushomeka kusvibiswa uye kupfupika kwekugadzirisa nguva.
Iyo yekukurumidza kupisa yekupisa maitiro inogona kushandisa akasiyana masosi emagetsi, uye annealing nguva yenguva yakakura kwazvo (kubva pa100 kusvika 10-9s, senge mwenje annealing, laser annealing, nezvimwewo). Inogona kumisa kusvibiswa zvachose uku ichinyatso kudzvanya kugovaniswa kwetsvina. Parizvino iri kushandiswa zvakanyanya mumhando yepamusoro-yekupedzisira yakabatanidzwa yekugadzira dhizaini maitiro ane wafer madhayamita anopfuura 200mm.
2. Chechipiri kupisa nzira
2.1 Oxidation maitiro
Mune yakasanganiswa yedunhu rekugadzira maitiro, kune nzira mbiri dzekugadzira silicon oxide mafirimu: thermal oxidation uye deposition.
Iyo oxidation process inoreva maitiro ekugadzira SiO2 pamusoro peiyo silicon wafers nekupisa oxidation. Iyo SiO2 firimu yakaumbwa neiyo thermal oxidation inoshandiswa zvakanyanya mumubatanidzwa wedunhu rekugadzira maitiro nekuda kwehukuru hwayo hwemagetsi ekudzivirira zvimiro uye kugona kwekuita.
Zvikumbiro zvayo zvakakosha ndezvizvi:
- Chengetedza midziyo kubva pakukwenya uye kusvibiswa;
- Kuderedza kuparadzaniswa kwemunda kwevatakuri vanochaja (surface passivation);
- Dielectric zvinhu mugedhi oxide kana kuchengetedza sero zvimiro;
- Kudyara masking mu doping;
- Dielectric layer pakati pesimbi conductive layer.
(1)Kudzivirirwa kwemudziyo uye kuzviparadzanisa nevamwe
SiO2 inokura pamusoro pechimedu (silicon wafer) inogona kushanda sechivharo chivharo chekuisa parutivi nekudzivirira midziyo yakaoma mukati mesilicon.
Nekuti SiO2 yakaoma uye isiri-porous (dense) zvinhu, inogona kushandiswa kunyatso patsanura inoshanda midziyo pasilicon pamusoro. Iyo yakaoma SiO2 layer inodzivirira iyo silicon wafer kubva kumakwara uye kukuvara kunogona kuitika panguva yekugadzira maitiro.
(2)Surface passivation
Surface passivation Mukana wakakura weSiO2 inokura zvinopisa nderekuti inogona kudzikisa pasi density yesilicon nekumanikidza mabhondi ayo akarembera, mhedzisiro inozivikanwa sepasi passivation.
Inodzivirira kuparara kwemagetsi uye inoderedza nzira yekuvuza ikozvino inokonzerwa nehunyoro, ions kana zvimwe zvinosvibisa zvekunze. Iyo yakaoma SiO2 layer inodzivirira Si kubva kune zvikwambo uye kugadzirisa kukuvara kunogona kuitika panguva yekumashure kugadzirwa.
Iyo SiO2 layer inokura paSi pamusoro inogona kusunga zvinosvibisa zvine magetsi (mobile ion kusvibiswa) paSi pamusoro. Passivation yakakoshawo pakudzora kuvuza ikozvino kwejunction zvishandiso uye kukura yakagadzikana gedhi oxides.
Seyepamusoro-mhando passivation layer, iyo oxide layer ine mhando yezvinodiwa senge yunifomu ukobvu, isina pinholes uye voids.
Chimwe chinhu pakushandisa oxide layer seSi surface passivation layer ndiko ukobvu hweiyo oxide layer. Iyo oxide layer inofanirwa kuve yakakora zvakakwana kudzivirira iyo simbi layer kubva pakuchaja nekuda kwekuchaja kuunganidzwa pane iyo silicon pamusoro, iyo yakafanana nechaji yekuchengetedza uye kuputsa maitiro eakajairwa capacitor.
SiO2 zvakare ine yakanyatsofanana coefficient yekuwedzera kwemafuta kuSi. Silicon wafers inowedzera panguva yekupisa tembiricha maitiro uye chibvumirano panguva yekutonhora.
SiO2 inowedzera kana zvibvumirano pamwero padyo neiyo yeSi, iyo inoderedza kurwiswa kwesilicon wafer panguva yekupisa. Izvi zvinodzivirirawo kupatsanurwa kweiyo oxide firimu kubva pasilicon pamusoro nekuda kwekushushikana kwefirimu.
(3)Gedhi oxide dielectric
Kune inonyanya kushandiswa uye yakakosha gedhi oxide chimiro muMOS tekinoroji, yakanyanya kutetepa oxide layer inoshandiswa se dielectric zvinhu. Sezvo gedhi oxide layer uye iyo Si iri pasi ine hunhu hwemhando yepamusoro uye kugadzikana, gedhi oxide layer rinowanzo kuwanikwa nekukura kwekupisa.
SiO2 ine dielectric simba rakakwirira (107V/m) uye yakakwirira resistivity (inenge 1017Ω · cm).
Kiyi yekuvimbika kweMOS zvishandiso kuvimbika kwegedhi oxide layer. Iyo gedhi chimiro mumidziyo yeMOS inodzora kuyerera kwezvino. Nekuti iyi oxide ndiyo hwaro hwekushanda kwemicrochips kwakavakirwa pamunda-effect tekinoroji,
Naizvozvo, mhando yepamusoro, yakanakisa firimu ukobvu kufanana uye kusavapo kwetsvina ndizvo zvazvinoda. Chero kusvibiswa kunogona kukanganisa basa regedhi oxide chimiro chinofanira kunyatsodzorwa.
(4)Doping chipingamupinyi
SiO2 inogona kushandiswa seinoshanda masking layer yekusarudza doping yesilicon pamusoro. Kana imwe oxide layer yaumbwa pamusoro pesilicon pamusoro, iyo SiO2 muchikamu chakajeka chemasikisi inomisikidzwa kuti iite hwindo umo iyo doping zvinhu inogona kupinda musilicon wafer.
Kana pasina mahwindo, oxide inogona kudzivirira iyo silicon pamusoro uye kudzivirira kusvibiswa kubva pakupararira, nekudaro ichigonesa kusarudza kusachena kudyarwa.
Dopants inofamba zvishoma nezvishoma muSiO2 kana ichienzaniswa neSi, saka chete yakaonda oxide layer inodiwa kuvhara madopants (ona kuti chiyero ichi chinotsamira tembiricha).
A thin oxide layer (semuenzaniso, 150 Å gobvu) inogona zvakare kushandiswa munzvimbo dzinodiwa kuisirwa ion, iyo inogona kushandiswa kuderedza kukuvadzwa kwesilicon pamusoro.
Inobvumirawo kudzora kurinani kwejunction kudzika panguva yekusachena kuisirwa nekudzikisa iyo channeling maitiro. Mushure mekudyara, iyo okisidhi inogona kubviswa zvine hydrofluoric acid kuita kuti iyo silicon pamusoro payo sandara zvakare.
(5)Dielectric layer pakati pesimbi simbi
SiO2 haifambisi magetsi pasi pemamiriro akajairwa, saka insulator inoshanda pakati pesimbi zvidimbu mumamicrochips. SiO2 inogona kudzivirira mapfupi maseketi pakati pepamusoro simbi simbi uye yakaderera simbi layer, senge insulator pawaya inogona kudzivirira mapfupi maseketi.
Chinodiwa chemhando ye oxide ndechekuti haina mapini uye voids. Inowanzo doped kuti iwane yakanyanya kushanda fluidity, iyo inogona kudzikisa kusvibiswa kupararira. Kazhinji inowanikwa nemakemikari vapor deposition pane kukura kwekushisa.
Zvichienderana nekuita gasi, iyo oxidation process inowanzo kukamurwa kuita:
- Dry oxygen oxidation: Si + O2 → SiO2;
- Wet oxygen oxidation: 2H2O (mhute yemvura) + Si→SiO2+2H2;
- Chlorine-doped oxidation: Chlorine gasi, senge hydrogen chloride (HCl), dichlorethylene DCE (C2H2Cl2) kana zvinobva mairi, inowedzerwa kuokisijeni kuvandudza mwero weoxidation uye kunaka kweiyo oxide layer.
(1)Dry oxygen oxidation process: Mamorekuru eokisijeni ari mugasi rekuita anopararira kuburikidza neyakatogadzirwa oxide layer, inosvika pakusangana pakati peSiO2 neSi, ita neSi, uye wozogadzira SiO2 layer.
Iyo SiO2 yakagadzirirwa neyakaoma oxidation okisijeni ine dense chimiro, yunifomu ukobvu, yakasimba masking kugona kwejekiseni uye kupararira, uye yakakwira maitiro ekudzokorora. Kukanganisa kwayo ndeyekuti kukura kwekukura kunononoka.
Iyi nzira inowanzo shandiswa kune yemhando yepamusoro oxidation, senge gedhi dielectric oxidation, nhete buffer layer oxidation, kana kutanga oxidation uye kumisa oxidation panguva yakakora buffer layer oxidation.
(2)Wet oxygen oxidation process: Upfu hwemvura hunogona kutakurwa zvakananga muokisijeni, kana kuti hunogona kuwanikwa nekuita kwehydrogen neokisijeni. The oxidation rate inogona kuchinjwa nekugadzirisa chikamu chekumanikidzwa kwehuwandu hwehydrogen kana mhute yemvura kune oksijeni.
Ziva kuti kuve nechokwadi chekuchengetedza, chiyero chehydrogen kune oxygen hachifanirwe kudarika 1.88: 1. Wet oxygen oxidation inokonzerwa nekuvepo kweokisijeni nemhute yemvura mugasi rinoita, uye mhute yemvura inoora kuita hydrogen oxide (H O) pakupisa kwakanyanya.
The diffusion rate yehydrogen oxide musilicon oxide inokurumidza kupfuura iyo yeokisijeni, saka iyo yekunyorovesa okisijeni mwero ingangoita one order yehukuru yakakwirira kupfuura yakaoma okisijeni oxidation rate.
(3)Chlorine-doped oxidation process: Kuwedzera kune yechinyakare yakaoma okisijeni oxidation uye yakanyorova okisijeni oxidation, chlorine gasi, senge hydrogen chloride (HCl), dichlorethylene DCE (C2H2Cl2) kana zvinobva zvayo, inogona kuwedzerwa kuokisijeni kuvandudza mwero weoxidation uye kunaka kweiyo oxide layer. .
Chikonzero chikuru chekuwedzera kwehuwandu hweoxidation ndechekuti kana chlorine yawedzerwa kune oxidation, kwete chete iyo reactant ine mhute yemvura inogona kukurumidzira oxidation, asi chlorine zvakare inounganidza pedyo nekubatana pakati peSi neSiO2. Muhupo hweokisijeni, chlorosilicon makomisheni anoshandurwa nyore nyore kuita silicon oxide, iyo inogona kukonzeresa oxidation.
Chikonzero chikuru chekuvandudzwa kweiyo oxide layer mhando ndechekuti maatomu eklorini ari muoxyde layer anogona kuchenesa chiitiko chesodium ions, nekudaro ichidzikisa hurema hweoxidation hunounzwa nesodium ion kusvibiswa kwemidziyo uye kugadzira zvigadzirwa. Naizvozvo, chlorine doping inobatanidzwa mune yakawanda yakaoma okisijeni oxidation maitiro.
2.2 Diffusion process
Chinyakare (traditional diffusion) zvinoreva kutamiswa kwezvinhu kubva munzvimbo dzepamusoro kuenda kunzvimbo dzine mwero wakaderera kusvika zvagoverwa zvakaenzana. Nzira yekuparadzira inotevedza mutemo waFick. Kupararira kunogona kuitika pakati pezvinhu zviviri kana kupfuura, uye mutsauko uye tembiricha kusiyana pakati penzvimbo dzakasiyana kunofambisa kugoverwa kwezvinhu kune imwe yunifomu yakaenzana.
Chimwe chezvakanyanya kukosha zvesemiconductor zvinhu ndezvekuti conductivity yavo inogona kugadziridzwa nekuwedzera akasiyana marudzi kana kuwanda kwemadopants. Mukugadzirwa kwedunhu rakasanganiswa, maitiro aya anowanzo kuwanikwa kuburikidza nedoping kana diffusion maitiro.
Zvichienderana nezvinangwa zvekugadzira, semiconductor zvinhu zvakaita sesilicon, germanium kana III-V makomisheni anogona kuwana maviri akasiyana semiconductor zvivakwa, N-mhando kana P-mhando, nedoping nevanopa tsvina kana kusvibiswa kugamuchirwa.
Semiconductor doping inonyanya kuitwa kuburikidza nenzira mbiri: diffusion kana ion implantation, imwe neimwe iine maitiro ayo:
Diffusion doping haina kudhura, asi iyo yekuisa uye kudzika kweiyo doping zvinhu haigone kunyatso kudzorwa;
Nepo kuisirwa ion kuri kudhura, inobvumira kunyatso kudzora kweiyo dopant concentration profiles.
Asati asvika ma1970s, saizi yeakabatanidzwa edunhu magirafu yaive pahurongwa hwe10μm, uye yechinyakare yekupisa tekinoroji yaiwanzo shandiswa kuita doping.
Iyo diffusion process inonyanya kushandiswa kugadzirisa semiconductor zvinhu. Nekuparadzanisa zvinhu zvakasiyana mu semiconductor zvinhu, conductivity yavo uye zvimwe zvinhu zvemuviri zvinogona kuchinjwa.
Semuenzaniso, nekuparadzanisa trivalent element boron musilicon, P-type semiconductor inoumbwa; ne doping pentavalent elements phosphorus kana arsenic, N-type semiconductor inoumbwa. Kana P-type semiconductor ine maburi akawanda ikasangana neN-type semiconductor ine maerekitironi akawanda, PN junction inoumbwa.
Sezvo saizi yemhando inodzikira, iyo isotropic diffusion process inoita kuti zvikwanisike kuti dopants ripararire kune rimwe divi reshield oxide layer, zvichikonzera zvikabudura pakati penzvimbo dziri padyo.
Kunze kwemamwe mashandisirwo akakosha (sekupararira kwenguva refu kuumba nzvimbo dzakafanana dzakagovaniswa dzakakwirira-voltage dzisingaperi), nzira yekuparadzira yakatsiviwa zvishoma nezvishoma nekuisa ion.
Nekudaro, muchizvarwa chetekinoroji pazasi pe10nm, sezvo saizi yeFin mune matatu-dimensional fin field-effect transistor (FinFET) mudziyo idiki kwazvo, kuisirwa ion kuchakuvadza chimiro chayo chidiki. Kushandiswa kweiyo yakasimba sosi diffusion process inogona kugadzirisa dambudziko iri.
2.3 Degradation process
Iyo annealing process inonziwo thermal annealing. Maitiro acho ndeyekuisa iyo silicon wafer munzvimbo yakanyanya tembiricha yeimwe nguva yenguva yekuchinja iyo microstructure pamusoro kana mukati meiyo silicon wafer kuti uwane yakanangana nekuita chinangwa.
Iyo inonyanya kukosha paramita mukuita annealing ndeye tembiricha uye nguva. Iyo yakakwirira tembiricha uye nguva yakareba, iyo inowedzera bhajeti yekupisa.
Mune chaiyo yakabatanidzwa yedunhu rekugadzira dhizaini, iyo inopisa bhajeti inodzorwa zvakanyanya. Kana paine akawanda annealing maitiro mukuyerera kwemaitiro, iyo yekupisa bhajeti inogona kuratidzwa seyepamusoro peakawanda ekurapa kupisa.
Zvisinei, ne-miniaturization ye-process nodes, iyo inobvumirwa kupisa bhajeti muhutano hwose inova diki uye duku, kureva, kutonhora kwepamusoro-kupisa kwekushisa kunoderera uye nguva inova shoma.
Kazhinji, iyo annealing process inosanganiswa neion implantation, yakaonda firimu deposition, simbi silicide kuumbwa uye mamwe maitiro. Iyo inonyanya kuzivikanwa ndeyekupisa kwekupisa mushure mekuisa ion.
Kudyarwa kweion kunokanganisa maatomu epasi, zvichiita kuti aparadzane kubva kune yekutanga lattice chimiro uye kukuvadza substrate lattice. Thermal annealing inogona kugadzirisa kukuvadzwa kwelattice kunokonzerwa nekuiswa ion uye zvakare inogona kufambisa maatomu etsvina akaiswa kubva pamigero yelattice kuenda kunzvimbo dzelattice, nekudaro kuamisa.
Tembiricha inodiwa pakugadzirisa kukuvadzwa kwelatisi ingangoita 500°C, uye tembiricha inodiwa pakuita kusachena inoita 950°C. Mune dzidziso, iyo nguva yekurebesa uye nekukwirira tembiricha, iyo inowedzera activation rate yetsvina, asi yakanyanyisa bhajeti yekupisa inotungamira mukupararira kwakanyanya kwetsvina, zvichiita kuti maitiro asadzore uye pakupedzisira achikonzera kuderedzwa kwechishandiso uye kuita kwedunhu.
Naizvozvo, nekuvandudzwa kwetekinoroji yekugadzira, yechinyakare yenguva refu yevira annealing zvishoma nezvishoma yakatsiviwa nekukurumidza thermal annealing (RTA).
Mukugadzira maitiro, mamwe mafirimu chaiwo anofanirwa kuita yekupisa annealing process mushure mekuiswa kuti ichinje zvimwe zvemuviri kana kemikari zvemufirimu. Semuenzaniso, firimu rakasununguka rinova dense, kushandura chiyero chayo chakaoma kana chemvura;
Imwe nzira inowanzo shandiswa annealing inoitika panguva yekuumbwa kwesimbi silicide. Mafirimu esimbi akadai secobalt, nickel, titanium, nezvimwewo anopushwa pamusoro pesilicon wafer, uye mushure mekukurumidza kupisa kwekupisa patembiricha yakaderera, simbi nesilicon zvinogona kugadzira alloy.
Dzimwe simbi dzinogadzira zvikamu zvakasiyana zvealloy pasi pemamiriro ekushisa akasiyana. Kazhinji, zvinotarisirwa kuumba chikamu chealloy ine yakaderera kubata kuramba uye kuramba kwemuviri panguva yekuita.
Zvinoenderana neyakasiyana bhajeti yebhajeti, iyo annealing process yakakamurwa kuita yakanyanya tembiricha yevira yehuni uye nekukurumidza kupisa kwekupisa.
- High tembiricha furnace chubhu annealing:
Iyo inzira yechinyakare annealing ine tembiricha yakanyanya, nguva yakareba yekurebesa uye bhajeti rakawanda.
Mune mamwe maitiro akakosha, senge okisijeni jekiseni yekuparadzanisa tekinoroji yekugadzirira SOI substrates uye yakadzika-tsime diffusion maitiro, inoshandiswa zvakanyanya. Maitiro akadai anowanzoda bhajeti repamusoro rekupisa kuti uwane latisi yakakwana kana yunifomu yekuparadzira kusachena.
- Rapid Thermal Annealing:
Ndiyo maitiro ekugadzirisa masilicon wafers nekukurumidza kupisa / kutonhora uye kugara kwenguva pfupi pane yakananga tembiricha, dzimwe nguva inonziwo Rapid Thermal Processing (RTP).
Mukati mekugadzira majekiseni ekupedzisira-akadzikama, kukurumidza kupisa kwekupisa kunowana optimization pakati pelatisi chirema chekugadzirisa, kusachena activation, uye kudzikisira kusvibiswa kwetsvina, uye yakakosha mukugadzira maitiro epamusoro tekinoroji node.
Kukwira kwetembiricha/kudonha maitiro uye kugara kwenguva pfupi pachitariswa tembiricha pamwe chete zvinoumba bhajeti rekupisa rekukurumidza kupisa kwekupisa.
Kupisa kwechinyakare kunopisa kunosvika 1000°C uye kunotora masekonzi. Mumakore achangopfuura, izvo zvinodikanwa zvekukurumidza kupisa kwekupisa zvave kuwedzera kuomarara, uye kupenya kwemagetsi, spike annealing, uye laser annealing zvakakura zvishoma nezvishoma, nenguva dzeannealing dzinosvika milliseconds, uye kunyange kuda kusimudzira mamicroseconds uye madiki-microseconds.
3 . Zvitatu zvekupisa michina
3.1 Diffusion uye oxidation midziyo
Iyo diffusion process inonyanya kushandisa iyo musimboti wekupisa kwekupisa pasi pekushisa kwakanyanya (kazhinji 900-1200 ℃) mamiriro ekusanganisa kusachena zvinhu musilicon substrate pahupamhi hunodiwa kuti ipe iyo chaiyo yekumisikidza kugovera, kuitira kushandura magetsi emagetsi eiyo silicon substrate. zvinhu uye gadzira semiconductor mudziyo chimiro.
Mune silicon yakasanganiswa yedunhu tekinoroji, iyo diffusion process inoshandiswa kugadzira PN junctions kana zvikamu zvakaita seresistors, capacitors, interconnect wiring, diodes uye transistors mumasekete akabatanidzwa, uye inoshandiswawo pakuzviparadzanisa pakati pezvikamu.
Nekuda kwekutadza kunyatso kudzora kugoverwa kweiyo doping concentration, iyo diffusion process yakatsiviwa zvishoma nezvishoma neion implantation doping process mukugadzirwa kwemaseketi akabatanidzwa ane wafer diameter ye200 mm uye pamusoro, asi shoma ichiri kushandiswa mukurema. doping maitiro.
Yechinyakare diffusion midziyo inonyanya kuchinjika yekuwaridza mavira, uye kune zvakare nhamba diki yemavira akatwasuka.
Horizontal diffusion choto:
Icho chishandiso chekurapa kupisa chinoshandiswa zvakanyanya mukuparadzira maitiro emasekete akabatanidzwa ane wafer dhayamita isingasviki 200mm. Hunhu hwayo ndehwekuti kupisa kwechoto muviri, reaction chubhu uye quartz chikepe chinotakura wafers zvese zvakaiswa zvakachinjika, saka ine maitiro ekuita maitiro ekufanana kwakanaka pakati pezvimedu.
Haisi imwe chete yemidziyo yakakosha yekumberi-yekupedzisira pane yakabatanidzwa yedunhu rekugadzira mutsara, asi zvakare inoshandiswa zvakanyanya mukupararira, oxidation, annealing, alloying uye mamwe maitiro mumaindasitiri senge discrete zvishandiso, magetsi emagetsi zvishandiso, optoelectronic zvishandiso uye optical fibers. .
Vertical diffusion furnace:
Kazhinji inoreva batch yekupisa yekurapa midziyo inoshandiswa mune yakabatanidzwa yedunhu maitiro emawafer ane dhayamita ye200mm uye 300mm, inowanzozivikanwa sechoto chakamira.
Mamisikirwo echoto chechato chekudziya ndechekuti muviri wekupisa wevira, reaction chubhu uye chikepe chequartz chinotakura wafer zvese zvinoiswa vertically, uye wafer inoiswa yakachinjika. Iyo ine hunhu hwekufanana kwakanaka mukati mewafer, yakakwirira dhigirii otomatiki, uye yakagadzikana system performance, iyo inogona kusangana nezvinodiwa zvemahombe-akabatanidzwa emagetsi ekugadzira mitsara.
Iyo vertical diffusion furnace ndeimwe yemidziyo yakakosha mune semiconductor yakabatanidzwa yedunhu rekugadzira mutsara uye zvakare inowanzoshandiswa mune zvine hukama maitiro muminda yemagetsi zvigadzirwa zvemagetsi (IGBT) zvichingodaro.
The vertical diffusion furnace inoshanda kune oxidation maitiro akadai akaoma okisijeni oxidation, hydrogen-oxygen synthesis oxidation, silicon oxynitride oxidation, uye matete firimu kukura maitiro sesilicon dioxide, polysilicon, silicon nitride (Si3N4), uye atomic layer deposition.
Iyo zvakare inowanzoshandiswa mukupisa kwekushisa annealing, copper annealing uye alloying maitiro. Panyaya yekuparadzira maitiro, vertical diffusion furnaces dzimwe nguva inoshandiswa mukurema doping process.
3.2 Chimbichimbi chekumisikidza
Rapid Thermal Processing (RTP) midziyo ndeye imwe-wafer yekupisa kupisa mudziyo unogona kukurumidza kusimudza tembiricha yechipfu kusvika kune tembiricha inodiwa nemaitiro (200-1300 ° C) uye inogona kukurumidza kuitonhodza pasi. Kupisa/kutonhora kunowanzoita 20-250°C/s.
Pamusoro pesimba rakasiyana siyana remasimba uye nguva yekumisikidza, RTP midziyo inewo mamwe maitiro akanakisa ekuita, senge yakanakisa yekupisa bhajeti kutonga uye nani pamusoro pehufanana (kunyanya kune mahombe mawaferi), kugadzirisa kukuvadzwa kwewafer kunokonzerwa nekuisirwa ion, uye makamuri akawanda anogona kumhanya matanho akasiyana-siyana panguva imwe chete.
Uye zvakare, RTP midziyo inogona kuchinjika uye nekukurumidza kushandura uye kugadzirisa maitiro magasi, kuitira kuti akawanda ekupisa ekurapa maitiro anogona kupedzwa mune imwecheteyo kupisa kupisa maitiro.
RTP midziyo inonyanya kushandiswa mukukurumidza thermal annealing (RTA). Mushure mekuisirwa ion, RTP midziyo inodiwa kugadzirisa kukuvadzwa kwakakonzerwa nekuisa ion, kumisa mapurotoni ane doped uye nekudzivisa kupararira kwetsvina.
Kazhinji, tembiricha yekugadzirisa kukanganiswa kwelattice ingangoita 500°C, ukuwo 950°C ichidikanwa pakumisikidza maatomu ane doped. Kuitwa kwetsvina kunoenderana nenguva uye tembiricha. Iyo nguva yakareba uye nepamusoro tembiricha, zvakanyanya kuzara kusvibiswa kunoitwa, asi hazvikodzeri kudzivirira kupararira kwetsvina.
Nekuti iyo RTP midziyo ine hunhu hwekukurumidza kupisa kusimuka / kudonha uye nguva pfupi, iyo annealing maitiro mushure mekuisirwa ion inokwanisa kuwana yakaringana parameter kusarudzwa pakati pelatisi kuremara kugadzirisa, kusachena activation uye kusachena diffusion inhibition.
RTA inonyanya kukamurwa kuita zvikamu zvina zvinotevera:
(1)Spike Annealing
Chimiro chayo ndechekuti inotarisa nekukurumidza kupisa / kutonhora maitiro, asi zvakanyanya haina maitiro ekuchengetedza kupisa. Iyo spike annealing inogara panzvimbo yakakwirira yekupisa kwenguva pfupi, uye basa rayo guru ndere kumisa zvinhu zvedoping.
Mumaapplication chaiwo, wafer inotanga kupisa nekukasira kubva kune imwe yakagadzika tembiricha yekumira uye pakarepo inotonhorera pasi mushure mekusvika painongedzo tembiricha.
Sezvo nguva yekuchengetedza painongedzo tembiricha poindi (kureva, iyo yepamusoro tembiricha poindi) ipfupi kwazvo, iyo annealing process inogona kuwedzera dhigirii yekusachena activation uye kuderedza dhigirii rekusvibiswa kwehutsvina, uku uine hurema hwakanaka hwekugadzirisa maitiro, zvichikonzera kukwirira. bonding quality uye yakaderera leakage ikozvino.
Spike annealing inoshandiswa zvakanyanya mu-ultra-shallow junction process mushure me65nm. Iyo maitiro maparamendi e spike annealing anonyanya kusanganisira tembiricha yepamusoro, peak yekugara nguva, tembiricha inosiyana uye wafer kuramba mushure mekuita.
Iyo ipfupi iyo yepamusoro pekugara nguva, zviri nani. Zvinonyanya kuenderana nekudziya / kutonhora kweye tembiricha yekudzora system, asi yakasarudzwa maitiro gasi mhepo dzimwe nguva zvakare ine imwe maitiro pairi.
Semuenzaniso, helium ine vhoriyamu diki yeatomu uye kukurumidza kupararira mwero, iyo inobatsira kukurumidza uye yunifomu yekutamisa kupisa uye inogona kuderedza peak upamhi kana peak pekugara nguva. Nokudaro, helium dzimwe nguva inosarudzwa kubatsira kupisa uye kutonhora.
(2)Lamp Annealing
Mwenje annealing tekinoroji inoshandiswa zvakanyanya. Halogen marambi anowanzo shandiswa seanokurumidza annealing kupisa masosi. Kupisa kwavo kwakakwirira / kutonhora kwemazinga uye chaiyo tembiricha yekudzora inogona kusangana nezvinodiwa zvekugadzira maitiro pamusoro pe65nm.
Nekudaro, haigone kuzadzisa zvizere zvinoomesesa zvinodiwa zve45nm process (mushure meiyo 45nm process, kana nickel-silicon kusangana kweiyo logic LSI ikaitika, wafer inoda kukurumidza kupisa kubva ku200 ° C kusvika pamusoro pe1000 ° C mukati memilliseconds, saka laser annealing inowanzodiwa).
(3)Laser Annealing
Laser annealing ndiyo nzira yekushandisa zvakananga laser kukurumidza kuwedzera tembiricha yepamusoro peiyo wafer kusvika yakwana kunyungudutsa silicon crystal, ichiita kuti ishandiswe zvakanyanya.
Zvakanakira laser annealing zvakanyanya kukurumidza kudziyisa uye inonzwisisika kutonga. Izvo hazvidi filament kudziyisa uye hapana zvakanyanya matambudziko nekushisa lag uye filament hupenyu.
Nekudaro, kubva pahunyanzvi hwekuona, laser annealing ine leakage ikozvino uye yasara chirema matambudziko, ayo anozoitawo imwe mhedzisiro pakuita kwechishandiso.
(4)Flash Annealing
Flash annealing i tekinoroji yekumisikidza inoshandisa yakakwira-yakasimba mwaranzi kuita spike annealing pamawafer pane chaiyo preheat tembiricha.
Iyo wafer inotangwa kusvika 600-800 ° C, uye ipapo high-intensity mwaranzi inoshandiswa kune pfupi-nguva pulse irradiation. Kana tembiricha yepamusoro yewafer ichisvika painodiwa tembiricha yekudzivirira, mwaranzi inodzimwa pakarepo.
RTP michina iri kuwedzera kushandiswa mune yepamusoro yakabatanidzwa yedunhu kugadzira.
Pamusoro pekushandiswa zvakanyanya mumitambo yeRTA, RTP midziyo yakatangawo kushandiswa mukukurumidza kupisa oxidation, kukurumidza kupisa nitridation, kukurumidza kupisa kupararira, kukurumidza makemikari vapor deposition, pamwe nesimbi silicide chizvarwa uye epitaxial maitiro.
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Nguva yekutumira: Aug-27-2024