Seimwe yezvikamu zvakakosha zveMOCVD midziyo, graphite base ndiyo inotakura uye inopisa muviri we substrate, iyo inotarisa zvakananga kufanana uye kuchena kwezvinhu zvemufirimu, saka unhu hwayo hunokanganisa zvakananga kugadzirirwa kwepa epitaxial sheet, uye panguva imwe chete, nekuwedzera kwenhamba. kushandiswa uye shanduko yemamiriro ekushanda, zviri nyore kwazvo kupfeka, zvezvinoshandiswa.
Kunyangwe graphite iine yakanakisa yekupisa conductivity uye kugadzikana, ine mukana wakanaka sechinhu chepasi cheMOCVD midziyo, asi mukugadzirwa kwekugadzira, graphite ichaparadza hupfu nekuda kwekusara kwegasi rinopisa uye metallic organics, uye hupenyu hwebasa re graphite base huchaderedzwa zvikuru. Panguva imwecheteyo, kudonha kwe graphite powder kunokonzera kusvibiswa kune chip.
Kubuda kwekombiki tekinoroji kunogona kupa pamusoro pehupfu kugadzirisa, kuwedzera kupisa conductivity, uye kuenzana kupisa kugovera, iyo yave iyo huru tekinoroji yekugadzirisa dambudziko iri. Graphite base inMOCVD midziyoshandisa nharaunda, graphite base yekumusoro coating inofanira kusangana neanotevera maitiro:
(1) Chigadziko chegraphite chinogona kuputirwa zvizere, uye density yakanaka, kana zvisina kudaro girafu chigadziko chiri nyore kuputirwa mugasi rinopisa.
(2) Iko kusanganiswa kwesimba neiyo graphite base yakakwira kuti ive nechokwadi chekuti kupfekedza hakusi nyore kudonha mushure mekuwedzera tembiricha uye kuderera kwekushisa kutenderera.
(3) Iine kugadzikana kwakanaka kwekemikari kudzivirira kukanganisa kwekuputira mukupisa kwakanyanya uye mhepo inoparadza.
SiC ine zvakanakira corrosion resistance, high thermal conductivity, thermal shock resistance uye high chemical stability, uye inogona kushanda zvakanaka muGaN epitaxial atmosphere. Uye zvakare, iyo yekupisa yekuwedzera coefficient yeSiC inosiyana zvishoma kubva kune iyo yegraphite, saka SiC ndiyo inosarudzirwa zvinhu zvekuputira pamusoro pegraphite base.
Parizvino, iyo yakajairika SiC inonyanya 3C, 4H uye 6H mhando, uye iyo SiC inoshandisa emhando dzakasiyana dzekristaro dzakasiyana. Semuenzaniso, 4H-SiC inogona kugadzira michina ine simba guru; 6H-SiC ndiyo yakanyanya kugadzikana uye inogona kugadzira mapikicha emagetsi; Nekuda kwechimiro chayo chakafanana neGaN, 3C-SiC inogona kushandiswa kugadzira GaN epitaxial layer uye kugadzira SiC-GaN RF zvishandiso. 3C-SiC inowanzozivikanwa seβ-SiC, uye yakakosha kushandiswa kweβ-SiC yakafanana nefirimu uye yekuvhara zvinhu, sakaβ-SiC ikozvino ndiyo inonyanya kushandiswa kwekuputira.
Nguva yekutumira: Nov-06-2023