SiC Silicon Carbide Device Manufacturing process (1)

Sezvatinoziva, mumunda we semiconductor, single crystal silicon (Si) ndiyo inonyanya kushandiswa uye yakakura-vhoriyamu semiconductor basic material munyika. Parizvino, inopfuura 90% yezvigadzirwa zve semiconductor zvinogadzirwa uchishandisa silicon-based zvinhu. Nekuwedzera kuri kuda kwemidziyo yemagetsi-yepamusoro-soro uye yakakwirira-voltage munzvimbo yemazuva ano yesimba, zvakanyanya kuomesesa zvinodikanwa zvakaiswa pamberi peakakosha parameters e-semiconductor zvinhu senge bandgap upamhi, kuparara kwemagetsi emumunda simba, electron saturation rate, uye thermal conductivity. Pasi pemamiriro ezvinhu aya, yakafara bandgap semiconductor zvinhu zvinomiririrwasilicon carbide(SiC) yakabuda semudiwa wepamusoro-simba density application.

Semukomboni semiconductor,silicon carbideyakanyanya kushomeka mune zvakasikwa uye inoratidzika muchimiro cheiyo mineral moissanite. Parizvino, dzinenge dzese silicon carbide dzinotengeswa munyika dzakagadzirwa nehunyanzvi. Silicon carbide ine mabhenefiti ekuomarara kwepamusoro, yakakwira yekupisa conductivity, yakanaka kugadzikana kwemafuta, uye yakakwirira yakakosha kuparara munda wemagetsi. Icho chinhu chakanakira kugadzira yakakwirira-voltage uye yakakwirira-simba semiconductor zvishandiso.

Saka, sei silicon carbide simba semiconductor zvishandiso zvinogadzirwa?

Ndeupi musiyano uripo pakati peiyo silicon carbide yekugadzira mudziyo uye yechinyakare silicon-yakavakirwa kugadzira maitiro? Kutanga kubva mumagazini ino, "Zvinhu pamusoroSilicon Carbide ChishandisoKugadzira” kuchaburitsa zvakavanzika chimwe nechimwe.

I

Maitiro ekuyerera kwesilicon carbide mudziyo kugadzira

Iyo yekugadzira maitiro esilicon carbide zvishandiso zvinowanzofanana neayo esilicon-based zvishandiso, kunyanya zvinosanganisira photolithography, kuchenesa, doping, etching, kuumbwa kwemafirimu, kutetepa uye mamwe maitiro. Vazhinji vagadziri vemagetsi emagetsi vanogona kusangana nezvinodiwa zvekugadzira zvesilicon carbide zvishandiso nekusimudzira mitsara yavo yekugadzira zvichienderana nesilicon-yakavakirwa kugadzira maitiro. Nekudaro, iyo yakakosha zvimiro zvesilicon carbide zvinhu zvinoona kuti mamwe maitiro mukugadzira kwayo mudziyo anofanirwa kutsamira pane chaiyo midziyo yekusimudzira yakakosha kugonesa silicon carbide zvishandiso kutsungirira yakakwira voltage uye yakakwira ikozvino.

II

Nhanganyaya kune silicon carbide yakakosha process modules

Iyo silicon carbide yakakosha process modules inonyanya kuvhara jekiseni doping, gedhi chimiro kuumba, morphology etching, metallization, uye kuonda maitiro.

(1) Jekiseni doping: Nekuda kweiyo yakakwira kabhoni-silicon chisungo chesimba musilicon carbide, maatomu ekusachena anonetsa kuparadzira musilicon carbide. Paunenge uchigadzira silicon carbide zvishandiso, iyo doping yePN junctions inogona chete kuwanikwa nekuisirwa ion pakupisa kwakanyanya.
Doping inowanzoitwa neiyoni yekusachena senge boron uye phosphorus, uye kudzika kwedoping kunowanzo 0.1μm ~ 3μm. High-energy ion implantation ichaparadza iyo lattice chimiro chesilicon carbide zvinhu pachayo. Yepamusoro-tembiricha annealing inodiwa kugadzirisa kukuvadzwa kwelatisi kunokonzerwa nekuisirwa ion uye kudzora maitiro eiyo annealing pane roughness. Iwo epakati maitiro ndeyekupisa-tembiricha ion implantation uye yakakwirira-tembiricha annealing.

Mufananidzo 1 Schematic diagram yeion implantation uye yakakwirira-tembiricha annealing mhedzisiro

(2) Magadzirirwo egedhi: Hunhu hweSiC/SiO2 interface ine simba guru pakufamba kwechiteshi uye kuvimbika kwegedhi reMOSFET. Izvo zvinodiwa kugadzira chaiyo gedhi oxide uye post-oxidation annealing maitiro kutsiva ma bond akarembera paSiC/SiO2 interface ine yakakosha maatomu (senge maatomu enitrogen) kuti isangane nekuita zvinodiwa zvemhando yepamusoro SiC/SiO2 interface uye yakakwirira. kutama kwemidziyo. Iwo musimboti maitiro ndeye gedhi oxide yakakwira-tembiricha oxidation, LPCVD, uye PECVD.

Mufananidzo 2 Schematic dhizaini yeyakajairwa oxide firimu deposition uye yakakwirira-tembiricha oxidation

(3) Morphology etching: Silicon carbide zvinhu zvine inert mumakemikari zvinonyungudutsa, uye chaiyo morphology control inogona kuwanikwa chete kuburikidza yakaoma etching nzira; mask zvinhu, mask etching sarudzo, yakasanganiswa gasi, sidewall control, etching rate, sidewall roughness, nezvimwe zvinoda kugadzirwa zvinoenderana nehunhu hwesilicon carbide zvinhu. Iwo epakati maitiro akaonda firimu deposition, photolithography, dielectric film corrosion, uye yakaoma etching maitiro.

Mufananidzo 3 Schematic diagram yesilicon carbide etching process

(4) Metallization: Iyo sosi electrode yechishandiso inoda simbi kuti iite yakanaka yakaderera-resistance ohmic kusangana nesilicon carbide. Izvi hazvidi chete kudzora simbi yekuisa dhizaini uye kudzora iyo interface mamiriro esimbi-semiconductor kuonana, asi inodawo yakakwirira-tembiricha annealing kuderedza Schottky chipingamupinyi urefu uye kuwana simbi-silicon carbide ohmic kuonana. Iwo musimboti maitiro isimbi magnetron sputtering, electron beam evaporation, uye nekukurumidza kupisa kwekupisa.

Mufananidzo 4 Schematic dhayagiramu yemagnetron sputtering musimboti uye metallization maitiro

(5) Kuonda maitiro: Silicon carbide zvinhu zvine hunhu hwekuomarara kwakanyanya, brittleness yakakwira uye yakaderera kuputsika kusimba. Kukuya kwayo kunowanzokonzera brittle kuputsika kwezvinhu, zvichikonzera kukuvadza kune wafer pamusoro uye pasi-pasi. Maitiro matsva ekukuya anoda kugadzirwa kuti asangane nezvinodiwa zvekugadzira zvesilicon carbide zvishandiso. Iwo musimboti maitiro ari kutetepa kwekukuya madhisiki, firimu rinonamira uye peeling, nezvimwe.

Mufananidzo 5 Schematic diagram yewafer grinding/thinning musimboti