Chechina, Physical mhute yekufambisa nzira
Physical vapor transport (PVT) nzira yakabva kune vapor phase sublimation teknolojia yakagadzirwa naLely muna 1955. SiC powder inoiswa mu graphite tube uye inopisa kusvika pakupisa kwepamusoro kuti iparadze uye iparadze SiC powder, uye ipapo girafu chubhu inotonhorera. Mushure mekuora kweiyo SiC hupfu, iyo mhute chikamu zvikamu zvinoiswa uye crystallized muSiC makristasi akatenderedza graphite chubhu. Kunyangwe iyi nzira yakaoma kuwana yakakura saizi SiC imwe makristasi, uye iyo deposition process mugraphite chubhu yakaoma kudzora, inopa mazano kune vanotevera vaongorori.
Ym Terairov et al. muRussia yakaunza pfungwa yemakristasi embeu pahwaro huno, uye yakagadzirisa dambudziko rekusadzoreka kwekristaro chimiro uye nucleation chinzvimbo cheSiC makristasi. Vanotevera vaongorori vakaramba vachivandudza uye vakazogadzira iyo yemuviri gasi chikamu chekutakura (PVT) nzira mukushandiswa kwemaindasitiri nhasi.
Seyekutanga SiC crystal yekukura nzira, yemuviri mhute yekufambisa nzira ndiyo yakanyanya kukura nzira yeSiC crystal kukura. Kuenzaniswa nedzimwe nzira, iyo nzira ine yakaderera zvinodikanwa zvekukura midziyo, nyore kukura maitiro, yakasimba controllability, kunyatso kusimudzira uye kutsvagisa, uye yakaona kushandiswa kwemaindasitiri. Chimiro chekristaro chakakura neicho chiripo chikuru PVT nzira inoratidzwa mumufananidzo.
Iyo axial uye radial tembiricha minda inogona kudzorwa nekudzora ekunze ekupisa kwekushisa mamiriro eiyo graphite crucible. Iyo SiC poda inoiswa pazasi pe graphite crucible ine tembiricha yepamusoro, uye SiC yembeu crystal inogadziriswa pamusoro peiyo graphite crucible ine yakaderera tembiricha. Nhambwe iri pakati pehupfu nembeu inowanzodzorwa kuita makumi emamirimita kudzivirira kusangana pakati pekiristaro imwe iri kukura nehupfu. Iyo tembiricha gradient inowanzo muhuwandu hwe15-35 ℃/cm. Iyo inert gasi ye50-5000 Pa inochengetwa muchoto kuwedzera convection. Nenzira iyi, mushure mekunge SiC poda yapiswa kusvika 2000-2500 ℃ nekudziisa induction, iyo SiC poda inodonha uye inoora kuita Si, Si2C, SiC2 uye zvimwe zvikamu zvemhute, uye inotakurwa kumagumo embeu negasi convection, uye iyo SiC crystal inokwenenzverwa pambeu yekristaro kuti iwane kukura kwekristaro imwechete. Chiyero chayo chekukura chiri 0.1-2mm / h.
PVT maitiro anotarisa pakutonga kwekukura tembiricha, tembiricha yekukura, nzvimbo yekukura, nzvimbo yepasi uye kudzvanywa kwekukura, mukana wayo ndewekuti maitiro ayo akakura, zviwanikwa zviri nyore kugadzira, mutengo wakaderera, asi maitiro ekukura PVT nzira yakaoma kuona, crystal yekukura kwe 0.2-0.4mm / h, zvakaoma kukura makristasi nehupamhi hukuru (> 50mm). Mushure memakumi emakore ekuenderera mberi kwekuedza, musika wazvino weSiC substrate wafers wakakura nenzira yePVT wanga wakakura kwazvo, uye kubuda kwepagore kweSiC substrate wafers kunogona kusvika mazana ezviuru zvemawafer, uye saizi yaro iri kushanduka zvishoma nezvishoma kubva pamainji mana kuenda pa6 inches. , uye yakagadzira 8 inches yeSiC substrate samples.
Cheshanu,High tembiricha kemikari vapor deposition nzira
High Temperature Chemical Vapor Deposition (HTCVD) inzira yakavandudzwa yakavakirwa paChemical Vapor Deposition (CVD). Iyo nzira yakatanga kutaurwa muna 1995 naKordina et al., Linkoping University, Sweden.
Iyo yekukura chimiro dhizaini inoratidzwa mumufananidzo:
Iyo axial uye radial tembiricha minda inogona kudzorwa nekudzora ekunze ekupisa kwekushisa mamiriro eiyo graphite crucible. Iyo SiC poda inoiswa pazasi pe graphite crucible ine tembiricha yepamusoro, uye SiC yembeu crystal inogadziriswa pamusoro peiyo graphite crucible ine yakaderera tembiricha. Nhambwe iri pakati pehupfu nembeu inowanzodzorwa kuita makumi emamirimita kudzivirira kusangana pakati pekiristaro imwe iri kukura nehupfu. Iyo tembiricha gradient inowanzo muhuwandu hwe15-35 ℃/cm. Iyo inert gasi ye50-5000 Pa inochengetwa muchoto kuwedzera convection. Nenzira iyi, mushure mekunge SiC poda yapiswa kusvika 2000-2500 ℃ nekudziisa induction, iyo SiC poda inodonha uye inoora kuita Si, Si2C, SiC2 uye zvimwe zvikamu zvemhute, uye inotakurwa kumagumo embeu negasi convection, uye iyo SiC crystal inokwenenzverwa pambeu yekristaro kuti iwane kukura kwekristaro imwechete. Chiyero chayo chekukura chiri 0.1-2mm / h.
PVT maitiro anotarisa pakutonga kwekukura tembiricha, tembiricha yekukura, nzvimbo yekukura, nzvimbo yepasi uye kudzvanywa kwekukura, mukana wayo ndewekuti maitiro ayo akakura, zviwanikwa zviri nyore kugadzira, mutengo wakaderera, asi maitiro ekukura PVT nzira yakaoma kuona, crystal yekukura kwe 0.2-0.4mm / h, zvakaoma kukura makristasi nehupamhi hukuru (> 50mm). Mushure memakumi emakore ekuenderera mberi kwekuedza, musika wazvino weSiC substrate wafers wakakura nenzira yePVT wanga wakakura kwazvo, uye kubuda kwepagore kweSiC substrate wafers kunogona kusvika mazana ezviuru zvemawafer, uye saizi yaro iri kushanduka zvishoma nezvishoma kubva pamainji mana kuenda pa6 inches. , uye yakagadzira 8 inches yeSiC substrate samples.
Cheshanu,High tembiricha kemikari vapor deposition nzira
High Temperature Chemical Vapor Deposition (HTCVD) inzira yakavandudzwa yakavakirwa paChemical Vapor Deposition (CVD). Iyo nzira yakatanga kutaurwa muna 1995 naKordina et al., Linkoping University, Sweden.
Iyo yekukura chimiro dhizaini inoratidzwa mumufananidzo:
Kana iyo SiC crystal inokura neiyo yemvura chikamu nzira, tembiricha uye convection kugovera mukati meiyo yekubatsira mhinduro inoratidzwa mumufananidzo:
Zvinogona kuonekwa kuti tembiricha iri padhuze nemadziro ecrucible mune yekubatsira mhinduro yakakwira, nepo tembiricha pakristaro yembeu yakaderera. Munguva yekukura, iyo graphite crucible inopa C sosi yekukura kwekristaro. Nemhaka yokuti kutonhora pamadziro e-crucible kwakakwirira, kunyunguduka kweC kwakakura, uye kuparara kwekukurumidza kunokurumidza, huwandu hwakawanda hweC huchanyungudutswa pamadziro e-crucible kuti uite sarudzo yakazara yeC. Izvi zvinogadziriswa nehuwandu hwakawanda yeC yakanyungudutswa ichaendeswa kune yakaderera chikamu chembeu makristasi ne convection mukati memubatsiri mhinduro. Nekuda kwekushisa kwakadzika kwembeu yekristaro yekupedzisira, kunyungudika kweiyo C inoenderana inoderera zvinoenderana, uye yekutanga C-saturated mhinduro inova supersaturated mhinduro yeC mushure mekuendeswa kune yakaderera tembiricha kupera pasi pemamiriro aya. Suprataturated C mumhinduro yakasanganiswa neSi mune yekubatsira mhinduro inogona kukura SiC crystal epitaxial pakristaro yembeu. Kana iyo superforated chikamu cheC ichidonha kunze, mhinduro inodzokera kumucheto-kupisa kwemadziro ecrucible ne convection, uye inonyungudutsa C zvakare kugadzira mhinduro yakazara.
Iyo yose inodzokorora, uye SiC crystal inokura. Mukuita kwekukura kwechikamu chemvura, kunyungudika uye kunaya kweC mumhinduro indekisi yakakosha yekufambira mberi kwekukura. Kuti uone kugadzikana kwekristaro kukura, zvinodikanwa kuchengetedza chiyero pakati pekuparara kweC pamadziro ecrucible uye kunaya kwemvura pakuguma kwembeu. Kana kuparara kweC kwakakura kudarika kunaya kweC, ipapo C mukristaro inowedzerwa zvishoma nezvishoma, uye pakarepo nucleation yeSiC ichaitika. Kana kuparadzwa kweC kuri kudiki pane kunaya kweC, kukura kwekristaro kuchave kwakaoma kuita nekuda kwekushaikwa kwesolute.
Panguva imwecheteyo, kutakurwa kweC neconvection kunokanganisawo kupihwa kweC panguva yekukura. Kuti ukure makristasi eSiC ane hutano hwakakwana hwekristaro uye ukobvu hwakakwana, zvinodikanwa kuve nechokwadi chekuenzanisa kwezvinhu zvitatu zviri pamusoro, izvo zvinowedzera zvakanyanya kuoma kweSiC fluid chikamu kukura. Nekudaro, nekuvandudzwa zvishoma nezvishoma uye kuvandudzwa kweanoenderana dzidziso uye matekinoroji, zvakanakira mvura chikamu kukura kweSiC makristasi zvicharatidza zvishoma nezvishoma.
Parizvino, iyo yemvura chikamu kukura kwe2-inch SiC makristasi inogona kuwanikwa muJapan, uye iyo yemvura chikamu kukura kwe4-inch makristasi ari kuvandudzwa. Parizvino, tsvakiridzo yemumba yakakodzera haina kuona mibairo yakanaka, uye zvinodikanwa kuteedzera basa rekutsvaga rakakodzera.
Chenomwe, Zvenyama uye zvemakemikari zvimiro zveSiC makristasi
(1) Mechanical zvimiro: SiC makristasi ane yakanyanya kuomarara uye yakanaka kupfeka kuramba. Kuomarara kwayo kweMohs kuri pakati pe9.2 ne9.3, uye kuomarara kwayo kweKrit kuri pakati pe2900 ne3100Kg/mm2, inova yechipiri chete kumakristaro edhaimani pakati pezvinhu zvakawanikwa. Nekuda kweakanakisa emuchina zvivakwa zveSiC, hupfu SiC inowanzoshandiswa muindasitiri yekucheka kana kukuya, paine kudiwa kwepagore kweanosvika mamirioni ematani. Iyo yekupfeka-inodzivirira coating pane mamwe maworkpiece inoshandisawo SiC coating, semuenzaniso, iyo yekupfeka-inodzivirira coating pane dzimwe ngarava dzehondo inoumbwa neSiC coating.
(2) Thermal properties: thermal conductivity yeSiC inogona kusvika 3-5 W / cm·K, iyo inopeta 3 iyo yetsika semiconductor Si uye 8 nguva yeGaAs. Kupisa kwekugadzirwa kwechigadzirwa chakagadzirirwa neSiC kunogona kukurumidza kuendeswa kure, saka zvinodiwa zvemamiriro ekupisa kupisa kweSiC device zvinenge zvakasununguka, uye zvakanyanya kukodzera kugadzirwa kwemagetsi emagetsi. SiC ine yakagadzikana thermodynamic zvivakwa. Pasi pemamiriro akajairwa ekumanikidza, SiC ichave yakaora yakananga kuva mhute ine Si uye C kumusoro.
(3) Chemical properties: SiC ine yakagadzikana makemikari ehupfumi, yakanaka corrosion resistance, uye haiiti chero ipi zvayo inozivikanwa asidhi pakupisa kwekamuri. SiC yakaiswa mumhepo kwenguva yakareba inozogadzira zvishoma nezvishoma mutete wakatetepa weSiO2, kudzivirira kumwe kuita oxidation. Kana tembiricha yakwira kusvika kunopfuura 1700 ℃, iyo SiO2 yakaonda layer inonyunguduka uye oxidize nekukurumidza. SiC inogona kuita inononoka oxidation reaction ine yakanyungudutswa oxidants kana mabhesi, uye SiC wafers anowanzo corrored mu yakanyungudutswa KOH uye Na2O2 kuratidza kuparara kweSiC makristasi..
(4) Magetsi zvinhu: SiC semumiriri zvinhu zvehupamhi bandgap semiconductors, 6H-SiC uye 4H-SiC bandgap upamhi ndeye 3.0 eV uye 3.2 eV zvichiteerana, inova 3 nguva yeSi uye 2 nguva iyo yeGaAs. Semi-conductor maturusi akagadzirwa neSiC ane madiki ekudonha azvino uye akakurisa kuputsika munda wemagetsi, saka SiC inoonekwa seyakanakira zvinhu kune yakakwirira-simba zvishandiso. Iyo saturated electron mobility yeSiC zvakare yakapetwa kaviri pane iyo yeSi, uye ine zvakare mabhenefiti ari pachena mukugadzirira kwepamusoro-frequency zvishandiso. P-mhando SiC makristasi kana N-mhando SiC makristasi anogona kuwanikwa kuburikidza nekuita doping maatomu ekusachena mumakristasi. Parizvino, P-mhando SiC makristasi anonyanya kugadzirwa neAl, B, Be, O, Ga, Sc nemamwe maatomu, uye N-mhando sic makristasi anonyanya kudonhedzwa nemaatomu eN. Musiyano weiyo doping concentration uye mhando ichave nemhedzisiro yakakura pane yemuviri uye makemikari zvimiro zveSiC. Panguva imwecheteyo, mutakuri wemahara anogona kurovererwa neiyo yakadzika nhanho doping yakadai seV, iyo resistivity inogona kuwedzerwa, uye semi-inodzivirira SiC crystal inogona kuwanikwa.
(5) Optical zvivakwa: Nekuda kweiyo yakakura bhendi gap, iyo isina kuvharwa SiC crystal haina ruvara uye yakajeka. Iyo doped SiC crystals inoratidza mavara akasiyana nekuda kwemaitiro avo akasiyana, semuenzaniso, 6H-SiC yakasvibira mushure mekuita doping N; 4H-SiC ine brown. 15R-SiC ndeyero. Yakadhindwa neAl, 4H-SiC inotaridzika yebhuruu. Iyo intuitive nzira yekusiyanisa SiC crystal mhando nekucherechedza mutsauko weruvara. Nekuenderera mberi nekutsvagisa pamusoro peSiC ine hukama minda mumakore makumi maviri apfuura, budiriro huru yakaitwa muhunyanzvi hwakabatana.
Chesere,Kuunzwa kweSiC budiriro mamiriro
Parizvino, iyo indasitiri yeSiC yave kuwedzera kukwana, kubva kune substrate wafers, epitaxial wafers kusvika kugadzirwa kwemudziyo, kurongedza, iyo yese maindasitiri cheni yakura, uye inogona kupa SiC zvigadzirwa zvinoenderana nemusika.
Cree mutungamiri muSiC crystal yekukura indasitiri ine chinzvimbo chinotungamira mune ese saizi uye mhando yeSiC substrate wafers. Cree parizvino inogadzira mazana matatu ezviuru eSiC substrate machipisi pagore, achiverengera anopfuura makumi masere muzana ezvekutumirwa kwenyika.
MunaGunyana 2019, Cree yakazivisa kuti ichavaka nzvimbo nyowani muNew York State, USA, iyo ichashandisa tekinoroji yepamusoro kukura 200 mm dhayamita simba uye RF SiC substrate wafers, zvichiratidza kuti yayo 200 mm SiC substrate zvinhu zvekugadzira tekinoroji ine. wedzera kukura.
Parizvino, zvigadzirwa zveSiC substrate chips pamusika zvinonyanya 4H-SiC uye 6H-SiC conductive uye semi-insulated marudzi e2-6 inches.
Muna Gumiguru 2015, Cree ndiye akatanga kuburitsa mazana maviri emamiriyoni eSiC substrate wafers eN-mhando uye LED, zvichimaka kutanga kwe8-inch SiC substrate wafers kumusika.
Muna 2016, Romm akatanga kutsigira timu yeVenturi uye ndiye akatanga kushandisa IGBT + SiC SBD musanganiswa mumotokari kutsiva IGBT + Si FRD mhinduro mune yechinyakare 200 kW inverter. Mushure mekuvandudzwa, uremu hwe inverter hunoderedzwa ne 2 kg uye ukuru hunoderedzwa ne19% uchichengetedza simba rimwechete.
Muna 2017, mushure mekuwedzera kugamuchirwa kweSiC MOS + SiC SBD, kwete chete uremu hunoderedzwa ne6 kg, ukuru hunoderedzwa ne43%, uye inverter simba rinowedzerawo kubva ku200 kW kusvika 220 kW.
Mushure mekunge Tesla atora SIC-yakavakirwa zvishandiso mune main drive inverters yeModel 3 zvigadzirwa muna 2018, maitiro ekuratidzira akakurumidza kukwidziridzwa, zvichiita kuti musika wemotokari weXEV ive sosi yekunakidzwa kumusika weSiC. Nekushandiswa kwakabudirira kweSiC, kukosha kwayo kwemusika kwakakwira zvakare nekukurumidza.
Chepfumbamwe,Mhedziso:
Nekuenderera mberi kwekuvandudzwa kweSiC ine chekuita neindasitiri tekinoroji, goho rayo uye kuvimbika kuchawedzera kuvandudzwa, mutengo weSiC zvishandiso uchaderedzwawo, uye kukwikwidza kwemusika kweSiC kuchave kuri pachena. Mune ramangwana, michina yeSiC ichashandiswa zvakanyanya munzvimbo dzakasiyana siyana senge mota, kufambiswa kwemashoko, magidhi emagetsi, uye zvekufambisa, uye musika wezvigadzirwa uchave wakafara, uye saizi yemusika ichawedzerwa, ichiva tsigiro yakakosha yenyika. hupfumi.
Nguva yekutumira: Jan-25-2024