Semicera Semiconductor inoronga kuwedzera kugadzirwa kwezvinhu zvakakosha zvemichina yekugadzira semiconductor pasi rose. Pakazosvika 2027, isu tinovavarira kumisa fekitori itsva inosvika zviuru makumi maviri emativi emamita ine huwandu hwekudyara kwemakumi manomwe emamiriyoni emadhora. Chimwe chezvinhu zvedu zvakakosha, iyosilicon carbide (SiC) mutakuri wewafer, inozivikanwawo semushonga, yaona kufambira mberi kwakakosha. Saka, chii chaizvo tireyi iyi inobata mawafer?
Mukugadzira wafer maitiro, epitaxial layers akavakirwa pane mamwe wafer substrates kugadzira zvishandiso. Semuenzaniso, maGaAs epitaxial layers anogadzirirwa pasilicon substrates yemidziyo yeLED, SiC epitaxial layers inokurira pane conductive SiC substrates yemashandisirwo emagetsi senge SBDs uye MOSFETs, uye GaN epitaxial layers anovakwa pane semi-insulating SiC substrates yeRF application senge HEMTs. . Iyi nzira inotsamira zvakanyanyaChemical vapor deposition (CVD)midziyo.
Mumidziyo yeCVD, ma substrates haagone kuiswa zvakananga pasimbi kana chigadziko chakareruka cheiyo epitaxial deposition nekuda kwezvinhu zvakasiyana sekuyerera kwegasi (yakatwasuka, yakatwasuka), tembiricha, kudzvanywa, kugadzikana, uye kusvibiswa. Naizvozvo, susceptor inoshandiswa kuisa iyo substrate, ichigonesa epitaxial deposition uchishandisa CVD tekinoroji. Iyi susceptor ndiyoSiC-yakavharwa graphite susceptor.
SiC-yakavharwa graphite susceptors anowanzo shandiswa muMetal-Organic Chemical Vapor Deposition (MOCVD) midziyo yekutsigira uye kupisa imwe-crystal substrates. Kugadzikana kwekupisa uye kufanana kwe SiC-yakavharwa graphite susceptorszvakakosha pakukura kwemhando ye epitaxial zvinhu, zvichiita kuti zvive chinhu chakakosha cheMOCVD michina (inotungamira MOCVD makambani emidziyo akadai seVeeco neAixtron). Parizvino, tekinoroji yeMOCVD inoshandiswa zvakanyanya mukukura epitaxial yeGaN mafirimu eblue LEDs nekuda kwekureruka kwayo, kudzora kukura kwekukura, uye kuchena kwakanyanya. Sechikamu chakakosha cheMOCVD reactor, iyosusceptor yeGaN firimu epitaxial kukurainofanira kuva nepamusoro-tembiricha yekudzivirira, yunifomu yekupisa conductivity, kugadzikana kwekemikari, uye yakasimba yekushisa kwekushisa. Graphite inosangana nezvinodiwa izvi zvakakwana.
Sechinhu chakakosha cheMOCVD midziyo, iyo graphite susceptor inotsigira uye inopisa imwe-crystal substrates, inokanganisa zvakananga kufana uye kuchena kwezvinhu zvemufirimu. Hunhu hwayo hunokanganisa zvakananga kugadzirira kweepitaxial wafers. Nekudaro, nekuwedzera kwekushandisa uye akasiyana mamiriro ekushanda, ma graphite susceptors anosakara zviri nyore uye anoonekwa seanodyiwa.
MOCVD susceptorsinoda kuve nehumwe hunhu hwekupfeka kuti isangane nezvinodiwa zvinotevera:
- -Kufukidzwa kwakanaka:Iko kupfekedza kunofanirwa kuvhara zvachose girafu susceptor nehupamhi hwepamusoro kudzivirira kukoromoka munzvimbo inoparadza gasi.
- -High bonding simba:Iyo yekupfekedza inofanirwa kusungirirana zvakasimba kune graphite susceptor, inomira yakawanda-yepamusoro-tembiricha uye yakaderera-yekushisa kutenderera pasina kupepeta.
- -Chemical kugadzikana:Iko kupfekedza kunofanirwa kuve kwakagadzikana nemakemikari kudzivirira kutadza mukupisa-kupisa uye corrosive atmospheres.
SiC, ine corrosion resistance, high thermal conductivity, thermal shock resistance, uye high chemical stability, inoita zvakanaka muGaN epitaxial environment. Pamusoro pezvo, iyo yekupisa yekuwedzera coefficient yeSiC yakafanana negraphite, ichiita SiC iyo yakasarudzika zvinhu zve graphite susceptor coatings.
Parizvino, marudzi akajairwa eSiC anosanganisira 3C, 4H, uye 6H, imwe neimwe yakakodzera kushandiswa kwakasiyana. Semuyenzaniso, 4H-SiC inogona kubudisa midziyo ine simba guru, 6H-SiC yakagadzikana uye inoshandiswa kune optoelectronic madivayiri, nepo 3C-SiC yakafanana mukugadzirwa kweGaN, zvichiita kuti ive yakakodzera GaN epitaxial layer production uye SiC-GaN RF zvishandiso. 3C-SiC, inozivikanwawo se β-SiC, inonyanya kushandiswa sefirimu uye yekuputira zvinhu, zvichiita kuti ive chinhu chekutanga chekugadzira.
Pane nzira dzakasiyana dzekugadziriraSiC coatings, kusanganisira sol-gel, embedding, brushing, plasma spraying, chemical vapor reaction (CVR), uye kemikari vapor deposition (CVD).
Pakati peizvi, nzira yekumisikidza ndeye yakakwirira-tembiricha yakasimba-chikamu sintering process. Nekuisa iyo graphite substrate mune embedding poda ine Si uye C poda uye sintering mune inert gasi nharaunda, iyo SiC yekuputira mafomu pane graphite substrate. Iyi nzira iri nyore, uye iyo yekuputira zvisungo zvakanaka ne substrate. Nekudaro, iyo yekupfekedza inoshaya ukobvu hwakafanana uye inogona kunge iine pores, izvo zvinotungamira kune kushomeka oxidation kuramba.
Spray Coating Method
Iyo yekupfapfaidza yekuputira nzira inosanganisira kupfapfaidza zvinwiwa zvakasvibirira pane graphite substrate pamusoro uye kuvarapa pane imwe tembiricha kuti vagadzire coating. Iyi nzira iri nyore uye inodhura-inoshanda asi inoguma nekubatana kusina simba pakati pekuputira uye substrate, kusakwana kwekuputira, uye micheka yakaonda ine yakaderera oxidation kuramba, inoda nzira dzebetsero.
Ion Beam Spraying Method
Kupfapfaidza kweIoni kunoshandisa pfuti yeion danda kupfapfaidza zvinhu zvakanyungudutswa kana kuti zvishoma zvakanyungudutswa panzvimbo yegraphite substrate, ichigadzira runyoro pakusimba. Iyi nzira iri nyore uye inogadzira dense SiC coatings. Nekudaro, iwo machira akatetepa ane asina kusimba oxidation kuramba, anowanzo shandiswa kune SiC composite coatings kuvandudza mhando.
Sol-Gel nzira
Iyo sol-gel nzira inosanganisira kugadzirira yunifomu, yakajeka sol mhinduro, kuvhara iyo substrate pamusoro, uye kuwana iyo yekuputira mushure mekuoma uye sintering. Iyi nzira iri nyore uye inodhura-inoshanda asi inokonzeresa machira ane yakaderera thermal kuvhunduka kuramba uye kubatwa nekutsemuka, kudzikamisa kushandiswa kwayo kwakapararira.
Chemical Vapor Reaction (CVR)
CVR inoshandisa Si uye SiO2 poda pakupisa kwepamusoro kugadzira SiO mhute, iyo inopindirana nekabhoni zvinhu substrate kugadzira SiC coating. Iyo inokonzeresa SiC yekuputira zvisungo zvakasimba neiyo substrate, asi maitiro acho anoda yakanyanya kuita tembiricha uye mutengo.
Chemical Vapor Deposition (CVD)
CVD ndiyo yekutanga nzira yekugadzirira SiC coatings. Inosanganisira gasi-chikamu maitiro pane graphite substrate pamusoro, apo mbishi zvinhu zvinosangana nemuviri uye kemikari maitiro, ichiisa seSiC coating. CVD inogadzira zvakasungwa zvakasungwa SiC coatings izvo zvinosimudzira iyo substrate's oxidation uye ablation kuramba. Nekudaro, CVD ine nguva refu yekuisa uye inogona kusanganisira magasi ane muchetura.
Market Situation
Mumusika weSiC-yakavharwa graphite susceptor, vagadziri vekunze vane kutungamira kwakakosha uye musika wepamusoro. Semicera yakakunda tekinoroji yakakosha yeyunifomu yeSiC coating kukura pane graphite substrates, ichipa mhinduro dzinogadzirisa kupisa kwekupisa, elastic modulus, kuoma, kuremara kwelatisi, uye zvimwe zvinhu zvemhando, kusangana zvizere neMOCVD midziyo yemidziyo.
Ramangwana Outlook
Indasitiri yeChina semiconductor iri kusimukira nekukurumidza, nekuwedzera kwenzvimbo yeMOCVD epitaxial michina uye kuwedzera maapplication. Iyo SiC-yakavharwa graphite susceptor musika inotarisirwa kukura nekukurumidza.
Mhedziso
Sechinhu chakakosha mumichina yekomboni semiconductor, kugona tekinoroji yekugadzira uye kuisa SiC-yakavharwa magirafu susceptors kwakakosha zvine hungwaru kuChina semiconductor indasitiri. Iyo yemumba yeSiC-yakavharwa graphite susceptor munda iri kubudirira, nemhando yechigadzirwa ichisvika pasirese.Semicerairi kuedza kuve mutengesi anotungamira mune ino ndima.
Nguva yekutumira: Jul-17-2024