Ion implantation inzira yekuwedzera imwe chiyero uye mhando yetsvina mune semiconductor zvinhu kuti ichinje maitiro avo emagetsi. Huwandu uye kugoverwa kwetsvina zvinogona kunyatsodzorwa.
Chikamu 1
Sei kushandisa ion implantation process
Mukugadzirwa kwemagetsi semiconductor zvishandiso, iyo P/N dunhu doping yechinyakarezvimedu zvesiliconinogona kuwanikwa nekupararira. Nekudaro, iyo diffusion yenguva dzose yemaatomu ekusachena mukatisilicon carbideyakaderera zvakanyanya, saka hazvigoneke kuti uwane yakasarudzika doping kuburikidza nekupararira maitiro, sezvakaratidzwa mumufananidzo 1. Kune rumwe rutivi, tembiricha mamiriro ekuisa ion akaderera pane ayo ekuparadzira maitiro, uye kuchinjika uye kwakaringana kugovera doping kunogona. umbwa.
Mufananidzo 1 Kuenzanisa kwekupararira uye ion implantation doping tekinoroji mune silicon carbide zvinhu.
Chikamu 2
Kubudirira seisilicon carbidekuiswa kweion
Iyo yakajairika high-energy ion implantation michina inoshandiswa musilicon carbide process yekugadzira maitiro inonyanya kuve neiyo ion sosi, plasma, aspiration zvikamu, analytical magineti, ion matanda, acceleration machubhu, process chambers, uye scanning disks, sezvakaratidzwa mumufananidzo 2.
Mufananidzo 2 Schematic diagiramu yesilicon carbide yakakwirira-simba ion implantation michina
(Kwakabva: "Semiconductor Manufacturing Technology")
SiC ion implantation inowanzoitwa pakupisa kwakanyanya, izvo zvinogona kuderedza kukuvadzwa kwekristaro lattice kunokonzerwa neion bombardment. For4H-SiC zvimedu, kugadzirwa kwenzvimbo dzeN-mhando kunowanzo kuwanikwa nekudyara nitrogen uye phosphorus ions, uye kugadzirwa kweP-mhandonzvimbo dzinowanzo wanikwa nekuisa aluminium ions uye boron ions.
Tafura 1. Muenzaniso wekusarudza doping muSiC device kugadzira
(Kwakabva: Kimoto, Cooper, Zvinokosha zveSilicon Carbide Technology: Kukura, Hunhu, Zvishandiso, uye Zvishandiso)
Mufananidzo 3 Kuenzanisa kweakawanda-nhanho simba ion kuisirwa uye wafer pamusoro doping yekumisikidza kugovera
(Kwakabva: G.Lulli, Nhanganyaya yeIon Implantation)
Kuti uwane yunifomu yedoping concentration munzvimbo yekuisirwa ion, mainjiniya anowanzo shandisa multi-step ion implantation kugadzirisa kupararira kwese kwese kwenzvimbo yekuisirwa (sezvakaratidzwa muMufananidzo 3); mune chaiyo nzira yekugadzira nzira, nekugadzirisa simba rekuisa uye kuiswa kweiyo ion implantation, iyo doping concentration uye doping yakadzika yeion implantation nzvimbo inogona kudzorwa, sezvakaratidzwa mumufananidzo 4. (a) uye (b); iyo ioni inodyara inoita yunifomu inosimwa pamusoro pewafer surface nekuongorora wafer surface kakawanda panguva yekushanda, sezvinoratidzwa mumufananidzo 4. (c).
(c) Movement trajectory yeion iplanter panguva yekuiswa kweion
Mufananidzo 4 Munguva yeion implantation process, iyo yekusachena kusungirirwa uye kudzika kunodzorwa nekugadzirisa iyo ion implantation simba uye dose.
III
Activation annealing maitiro esilicon carbide ion implantation
Iyo yekumisikidza, nzvimbo yekugovera, activation rate, kukanganisa mumuviri uye pamusoro peiyo ion implantation ndiyo mikuru paramita yeion implantation process. Pane zvinhu zvakawanda zvinokanganisa mhedzisiro yezviyero izvi, zvinosanganisira kuisirwa dose, simba, crystal orientation yezvinhu, tembiricha yekuisa, tembiricha yeannealing, nguva yeannealing, zvakatipoteredza, etc. Kusiyana nesilicon ion implantation doping, zvichiri kunetsa zvachose ionize. kusvibiswa kwesilicon carbide mushure meion implantation doping. Kutora iyo aluminium inogashira ionization mwero munzvimbo isina kwayakarerekera ye4H-SiC semuenzaniso, padanho rekuisa doping re1 × 1017cm-3, chiyero chekugamuchira ionization chinongosvika gumi neshanu muzana patembiricha yekamuri (kazhinji iyo ionization rate yesilicon inenge. 100%). Kuitira kuzadzisa chinangwa chepamusoro activation rate uye hurema hushoma, kudziya kwepamusoro-tembiricha nzira ichashandiswa mushure mekuisirwa ion kugadzirisa zvakare hurema hweamorphous hunogadzirwa panguva yekuisirwa, kuitira kuti maatomu akadyarwa apinde panzvimbo yekutsiva uye ashandiswe, sezvaratidzwa. muMufananidzo 5. Parizvino, kunzwisisa kwevanhu pamusoro pemagadzirirwo ekugadzirisa annealing kuchiri kushoma. Kudzora uye nekunzwisisa kwakadzama kweiyo annealing maitiro ndeimwe yetsvakiridzo inotarisa yeion implantation mune ramangwana.
Mufananidzo 5 Schematic dhayagiramu yekuchinja kweatomu yeatomu pamusoro peiyo silicon carbide ion implantation nzvimbo isati uye mushure meiyo ion implantation annealing, uko V.siinomiririra silicon vacancies, VCinomiririra nzvimbo dzekabhoni, Ciinomiririra maatomu ekuzadza kabhoni, uye Siiinomiririra maatomu ekuzadza silicon
Ion activation annealing inowanzobatanidza kunyura kwechoto, kukurumidza kuvharisa uye laser annealing. Nekuda kwekuderedzwa kweSi maatomu muSiC zvinhu, tembiricha yekudziya kazhinji haipfuure 1800 ℃; iyo annealing atmosphere inowanzoitwa mune inert gasi kana vacuum. Ioni dzakasiyana dzinokonzera nzvimbo dzakasiyana dzakaremara muSiC uye dzinoda tembiricha dzakasiyana dzekudziya. Kubva pamigumisiro yakawanda yekuedza, zvinogona kugumiswa kuti iyo yakakwirira tembiricha yekudzivirira, iyo inokwirisa iyo activation rate (sezvinoratidzwa muFigure 6).
Mufananidzo 6 Mhedzisiro yekudziya tembiricha pane yemagetsi activation rate yenitrogen kana phosphorus kudyara muSiC (pakamuri tembiricha)
(Zvose kuisirwa dose 1 × 1014cm-2)
(Kwakabva: Kimoto, Cooper, Zvinokosha zveSilicon Carbide Technology: Kukura, Hunhu, Zvishandiso, uye Zvishandiso)
Iyo inowanzoshandiswa activation annealing process mushure meSiC ion implantation inoitwa muAr atmosphere pa 1600 ℃ ~ 1700 ℃ kudzoreredza iyo SiC pamusoro uye activate iyo dopant, nekudaro inovandudza conductivity yenzvimbo ine doped; isati yanyungudutswa, kabhoni bhaisikopo rinogona kuputirwa pamusoro pewafer pamusoro pekudzivirirwa kwepamusoro kuderedza kushatisa kwepasi kunokonzerwa neSi desorption uye pamusoro peatomic migration, sezvakaratidzwa muMufananidzo 7; mushure mekuvhara, iyo carbon film inogona kubviswa ne oxidation kana corrosion.
Mufananidzo 7 Kufananidzwa kwekuoma kwepasi kwe4H-SiC mawaferi ane kana asina kabhoni firimu chengetedzo pasi pe1800 ℃ annealing tembiricha.
(Kwakabva: Kimoto, Cooper, Zvinokosha zveSilicon Carbide Technology: Kukura, Hunhu, Zvishandiso, uye Zvishandiso)
IV
Iko kukanganisa kweSiC ion kuisirwa uye activation annealing maitiro
Kusimwa kweIon uye kunotevera activation annealing kunozoburitsa hurema hunodzikisira mashandiro emudziyo: yakaoma point defects, stacking zvikanganiso (sezvinoratidzwa muFigure 8), itsva dislocations, kudzika kana kudzika kwesimba level kukanganisa, basal plane dislocation loops uye kufamba kwezviripo dislocations. Sezvo iyo yakakwira-energy ion bombardment process ichizokonzera kushushikana kune iyo SiC wafer, iyo yepamusoro-tembiricha uye yakakwirira-simba ion implantation process inozowedzera wafer warpage. Matambudziko aya akavewo gwara rinoda kugadziriswa nekukurumidza uye kudzidza mukugadzira nzira yeSiC ion implantation uye annealing.
Mufananidzo 8 Schematic dhayagiramu yekuenzanisa pakati peyakajairwa 4H-SiC lattice kurongeka uye akasiyana stacking zvikanganiso.
(Kwakabva: Nicolὸ Piluso 4H-SiC Defects)
V.
Kuvandudzwa kwesilicon carbide ion implantation process
(1) Firimu yakaonda yeokisijeni inochengetwa pamusoro peiyo ion implantation nzvimbo kuti kuderedze dhigirii yekukuvara kwekudyara kunokonzerwa ne-high-energy ion implantation kumusoro kwesilicon carbide epitaxial layer, sezvakaratidzwa muMufananidzo 9. (a) .
(2) Kuvandudza kunaka kwedhisiki yedhisiki mumidziyo yekuisirwa ion, kuitira kuti wafer uye dhisiki rinotangwa zvikwane zvakanyanya, kupisa kwemafuta kweiyo tarisiro dhisiki kune wafer kuri nani, uye mudziyo unopisa kuseri kwewafer. zvakanyanya kufanana, kuvandudza hutano hwepamusoro-tembiricha uye yakakwirira-simba ion implantation pasilicon carbide wafers, sezvinoratidzwa mumufananidzo 9. (b).
(3) Gadzirisa tembiricha yekukwira uye kufanana kwetembiricha panguva yekushanda kweyepamusoro-tembiricha annealing michina.
Mufananidzo 9 Nzira dzekuvandudza ion implantation process
Nguva yekutumira: Oct-22-2024