Silicon carbide (SiC)chinhu chakakosha chakafara bandgap semiconductor zvinhu chinoshandiswa zvakanyanya mumasimba epamusoro uye akakwira-frequency zvigadzirwa zvemagetsi. Izvi zvinotevera zvimwe zvakakosha parameters zvesilicon carbide wafersuye tsanangudzo dzavo dzakadzama:
Lattice Parameters:
Ita shuwa kuti iyo lattice yenguva dzose ye substrate inoenderana ne epitaxial layer kuti ikure kuderedza kuremara uye kusagadzikana.
Semuyenzaniso, 4H-SiC uye 6H-SiC vane akasiyana lattice constants, izvo zvinokanganisa epitaxial layer yavo yemhando uye mashandiro emudziyo.
Stacking Sequence:
SiC inoumbwa nemaatomu esilicon nemaatomu ekabhoni muchiyero che1: 1 pachiyero chikuru, asi kurongeka kwemaatomu akaturikidzana kwakasiyana, kunozoumba zvimiro zvekristaro zvakasiyana.
Mafomu ekristaro akajairika anosanganisira 3C-SiC (cubic structure), 4H-SiC (hexagonal structure), uye 6H-SiC (hexagonal structure), uye inopindirana stacking sequences ndeiyi: ABC, ABCB, ABCACB, nezvimwewo. hunhu uye zvimiro zvemuviri, saka kusarudza iyo yakakodzera fomu rekristaro kwakakosha kune chaiwo maapplication.
Mohs Kuoma: Inotarisa kuoma kwe substrate, iyo inokanganisa kusununguka kwekugadzirisa uye kupfeka kuramba.
Silicon carbide ine yakanyanya kuoma kweMohs, kazhinji iri pakati pe9-9.5, ichiita kuti ive chinhu chakanyanya kuoma chakakodzera kune maapplication anoda yakakwirira kupfeka kuramba.
Density: Inokanganisa simba remagetsi uye kupisa kweiyo substrate.
High density kazhinji inoreva zvirinani kusimba kwemagetsi uye kupisa conductivity.
Thermal Expansion Coefficient: Inoreva kuwedzera kwehurefu kana vhoriyamu yesubstrate zvinoenderana nehurefu hwepakutanga kana vhoriyamu apo tembiricha inokwira nedhigirii rimwe chete Celsius.
Iko kukwana pakati pe substrate uye epitaxial layer pasi pekuchinja kwekushisa kunokanganisa kugadzikana kwekupisa kwechigadzirwa.
Refractive Index: Nezve optical application, iyo refractive index ndiyo yakakosha parameter mukugadzirwa kwe optoelectronic zvishandiso.
Misiyano mune refractive index inokanganisa kumhanya uye nzira yemafungu emwenje mune izvo zvinhu.
Dielectric Constant: Inokanganisa capacitance maitiro emudziyo.
Iyo yakaderera dielectric nguva dzose inobatsira kuderedza parasitic capacitance uye kunatsiridza mashandiro echishandiso.
Thermal Conductivity:
Yakakosha kune yakakwirira-simba uye yakakwirira-tembiricha application, inokanganisa kutonhora kwechishandiso.
Iyo yakakwira yekupisa yekupisa yesilicon carbide inoita kuti inyatsokodzera kune yakakwirira-simba zvemagetsi zvishandiso nekuti inogona kunyatso kuitisa kupisa kure nemudziyo.
Band-gap:
Zvinoreva mutsauko wesimba pakati pepamusoro pevalence bhendi uye pasi pe conduction bhendi mune semiconductor zvinhu.
Wide-gap zvinhu zvinoda simba rakakwirira kuti rikurudzire shanduko yemagetsi, izvo zvinoita kuti silicon carbide iite zvakanaka munzvimbo yekupisa uye yakakwirira-mwaranzi.
Munda Wemagetsi Wekuputsa:
Iyo yekugumira voltage iyo semiconductor zvinhu inogona kumira.
Silicon carbide ine yakakwira kwazvo breakdown yemagetsi munda, iyo inobvumira kuti ikwanise kumira zvakanyanya yakakwira voltages pasina kutyora.
Saturation Drift Velocity:
Iyo yakanyanya avhareji yekumhanya iyo vatakuri vanogona kusvika mushure meimwe nzvimbo yemagetsi yakaiswa mune semiconductor zvinhu.
Kana simba remunda wemagetsi richiwedzera kune imwe nhanho, kumhanya kwemutakuri hakuchawedzera nekumwe kukwidziridzwa kwemunda wemagetsi. Velocity panguva iyi inonzi saturation drift velocity. SiC ine yakakwira saturation drift velocity, iyo inobatsira pakuzadzikiswa kweyepamusoro-kumhanya michina yemagetsi.
Aya ma parameter pamwe chete anoona kushanda uye kushanda kweSiC wafersmumashandisirwo akasiyana-siyana, kunyanya ayo ari musimba repamusoro-soro, high-frequency uye high-temperature nharaunda.
Nguva yekutumira: Jul-30-2024