Epitaxial kukura inyanzvi inokura imwe crystal layer pane imwechete crystal substrate (substrate) ine yakafanana crystal orientation se substrate, sekunge iyo yepakutanga crystal yakawedzera kunze.Iyi ichangobva kukura single crystal layer inogona kuve yakasiyana neiyo substrate maererano nemhando ye conductivity, resistivity, nezvimwewo, uye inogona kukura akawanda-layer makristasi ane hukobvu hwakasiyana uye zvakasiyana zvinodiwa, nekudaro ichivandudza zvakanyanya kuchinjika kwedhizaini dhizaini uye mashandiro emudziyo.Mukuwedzera, iyo epitaxial process inoshandiswawo zvakanyanya muPN junction isolation tekinoroji mumaseketi akabatanidzwa uye mukuvandudza hunhu hwezvinhu mumasekete makuru akabatanidzwa.
Kusarudzwa kwe epitaxy kunonyanya kuenderana nemhando dzakasiyana dzemakemikari e substrate uye epitaxial layer uye nzira dzakasiyana dzekukura.
Zvinoenderana neakasiyana emakemikari ekuumbwa, epitaxial kukura inogona kukamurwa kuita marudzi maviri:
1. Homoepitaxial: Muchiitiko ichi, epitaxial layer ine makemikari akafanana se substrate.Semuenzaniso, silicon epitaxial layers inokura zvakananga pasilicon substrates.
2. Heteroepitaxy: Pano, kemikari ye epitaxial layer yakasiyana neye substrate.Semuenzaniso, gallium nitride epitaxial layer inorimwa pasapphire substrate.
Zvinoenderana neakasiyana nzira dzekukura, epitaxial kukura tekinoroji inogona zvakare kukamurwa mumhando dzakasiyana:
1. Molecular beam epitaxy (MBE): Iyi ndiyo tekinoroji yekukura mafirimu matete ekristaro pane imwechete crystal substrates, iyo inowanikwa nekunyatso kudzora mwero wekuyerera kwema molecular beam uye density yebeam mune ultra-high vacuum.
2. Metal-organic chemical vapor deposition (MOCVD): Iyi teknolojia inoshandisa metal-organic compounds uye gas-phase reagents kuti iite maitiro emakemikari pakupisa kwepamusoro kuti ibudise zvinodiwa zvefirimu zvitete.Iyo ine yakafara mashandisirwo mukugadzirira kweakaomeswa semiconductor zvinhu uye zvishandiso.
3. Liquid phase epitaxy (LPE): Nekuwedzera mvura yemvura kune imwe crystal substrate uye kuita kupisa kwekupisa pane imwe tembiricha, iyo yemvura inopenya kuita imwe crystal film.Mafirimu akagadzirirwa neiyi tekinoroji akafananidzwa nelatisi-inofananidzwa neiyo substrate uye anowanzo shandiswa kugadzirira komputa semiconductor zvinhu uye zvishandiso.
4. Vapor phase epitaxy (VPE): Inoshandisa gaseous reactants kuti iite kemikari inopindirana nekupisa kwepamusoro kuti ibudise zvinodiwa zvefirimu zvitete.Iyi tekinoroji yakakodzera kugadzirira yakakura-nzvimbo, yepamusoro-yemhando yekristaro mafirimu, uye inonyanya kushamisa mukugadzirira kwekomboni semiconductor zvinhu uye zvishandiso.
5. Chemical beam epitaxy (CBE): Iyi tekinoroji inoshandisa matanda emakemikari kukura mafirimu ekristaro ega pane imwechete crystal substrates, iyo inowanikwa nekunyatso kudzora kemikari danda kuyerera uye danda density.Iyo ine yakafara maapplication mukugadzirira kwemhando yepamusoro imwe crystal matete mafirimu.
6. Atomic layer epitaxy (ALE): Uchishandisa atomic layer deposition tekinoroji, iyo inodiwa firimu zvinhu zvakatetepa zvinoiswa layer ne layer pane imwechete crystal substrate.Iyi tekinoroji inogona kugadzirira yakakura-nzvimbo, yepamusoro-yemhando yekristaro mafirimu uye inowanzoshandiswa kugadzirira komputa semiconductor zvinhu uye zvishandiso.
7. Kupisa rusvingo epitaxy (HWE): Kuburikidza nekupisa kwepamusoro-kupisa, gaseous reactants inoiswa pane imwe crystal substrate kuti iite imwe firimu rekristaro.Iyi tekinoroji yakakodzerawo kugadzirira yakakura-nzvimbo, yepamusoro-yemhando yekristaro mafirimu, uye inonyanya kushandiswa mukugadzirira kwekomboni semiconductor zvinhu uye zvishandiso.
Nguva yekutumira: Chivabvu-06-2024