Chii chinonzi epitaxial kukura?

Epitaxial kukura inyanzvi inokura imwe crystal layer pane imwechete crystal substrate (substrate) ine yakafanana crystal orientation se substrate, sekunge iyo yepakutanga crystal yakawedzera kunze. Iyi ichangobva kukura single crystal layer inogona kuve yakasiyana neiyo substrate maererano nemhando ye conductivity, resistivity, nezvimwewo, uye inogona kukura akawanda-layer makristasi ane hukobvu hwakasiyana uye zvakasiyana zvinodiwa, nekudaro ichivandudza zvakanyanya kuchinjika kwedhizaini dhizaini uye mashandiro emudziyo. Pamusoro pezvo, iyo epitaxial process inoshandiswawo zvakanyanya muPN junction isolation tekinoroji mumaseketi akabatanidzwa uye mukuvandudza mhando yezvinhu mumasekete makuru akabatanidzwa.

Kusarudzwa kwe epitaxy kunonyanya kuenderana nemhando dzakasiyana dzemakemikari e substrate uye epitaxial layer uye nzira dzakasiyana dzekukura.

Zvinoenderana neakasiyana emakemikari ekuumbwa, epitaxial kukura inogona kukamurwa kuita marudzi maviri:

1. Homoepitaxial:

Muchiitiko ichi, epitaxial layer ine makemikari akafanana se substrate. Semuenzaniso, silicon epitaxial layers inokura zvakananga pasilicon substrates.

2. Heteroepitaxy:

Pano, kemikari ye epitaxial layer yakasiyana neye substrate. Semuenzaniso, gallium nitride epitaxial layer inorimwa pasapphire substrate.

Zvinoenderana neakasiyana nzira dzekukura, epitaxial kukura tekinoroji inogona zvakare kukamurwa mumhando dzakasiyana:

1. Molecular beam epitaxy (MBE):

Iyi tekinoroji yekukura imwe chete crystal yakaonda mafirimu pane imwechete crystal substrates, iyo inowanikwa nekunyatso kudzora mamorekuru beam kuyerera mwero uye density yedanda mune yekupedzisira-yakakwira vacuum.

2. Metal-organic chemical vapor deposition (MOCVD):

Iyi tekinoroji inoshandisa simbi-organic komisheni uye gasi-chikamu reagents kuita kemikari maitiro patembiricha yakakwira kugadzira iyo inodiwa firimu zvinhu. Iyo ine yakafara mashandisirwo mukugadzirira kweakaomeswa semiconductor zvinhu uye zvishandiso.

3. Liquid phase epitaxy (LPE):

Nekuwedzera zvinhu zvemvura kune imwechete crystal substrate uye kuita kupisa kupisa pane imwe tembiricha, iyo yemvura zvinhu inopenya kugadzira imwe kristaro firimu. Mafirimu akagadzirirwa neiyi tekinoroji akafananidzwa nelatisi-inofananidzwa neiyo substrate uye anowanzo shandiswa kugadzirira komputa semiconductor zvinhu uye zvishandiso.

4. Vapor phase epitaxy (VPE):

Inoshandisa gaseous reactants kuita kemikari kuita pane tembiricha yakakwira kugadzira iyo inodiwa firimu zvinhu. Iyi tekinoroji yakakodzera kugadzirira yakakura-nzvimbo, yepamusoro-yemhando yekristaro mafirimu, uye inonyanya kushamisa mukugadzirira kwekomboni semiconductor zvinhu uye zvishandiso.

5. Chemical beam epitaxy (CBE):

Iyi tekinoroji inoshandisa matanda emakemikari kukura mafirita ekristaro ega pane imwechete crystal substrates, iyo inowanikwa nekunyatso kudzora kemikari beam kuyerera uye danda density. Iyo ine yakafara maapplication mukugadzirira kwemhando yepamusoro imwe crystal matete mafirimu.

6. Atomic layer epitaxy (ALE):

Uchishandisa atomic layer deposition tekinoroji, izvo zvinodikanwa zvitete zvemufirimu zvinoiswa dhizaini pane imwe crystal substrate. Iyi tekinoroji inogona kugadzirira yakakura-nzvimbo, yepamusoro-yemhando yekristaro mafirimu uye inowanzoshandiswa kugadzirira komputa semiconductor zvinhu uye zvishandiso.

7. Hot wall epitaxy (HWE):

Kuburikidza nekudziya kwepamusoro-tembiricha, gaseous reactants inoiswa pane imwechete crystal substrate kuti igadzire imwe kristaro firimu. Iyi tekinoroji yakakodzerawo kugadzirira yakakura-nzvimbo, yepamusoro-yemhando yekristaro mafirimu, uye inonyanya kushandiswa mukugadzirira kwekomboni semiconductor zvinhu uye zvishandiso.