Muchigadziro chekugadzirira, kune maviri makuru ekubatanidza: imwe ndeyekugadzirira kwe substrate, uye imwe ndeyekuitwa kweiyo epitaxial process. Iyo substrate, wafer yakanyatsogadzirwa kubva semiconductor single crystal material, inogona kuiswa yakananga muwafer kugadzira maitiro sehwaro hwekugadzira semiconductor zvishandiso, kana inogona kuwedzeredzwa kuburikidza ne epitaxial process.
Saka, chii chinonzi denotation? Muchidimbu, epitaxy kukura kwechikamu chitsva chekriststal imwe chete pane imwe crystal substrate yakagadziridzwa zvakanaka (kucheka, kugaya, kupukuta, nezvimwewo). Iyi itsva imwe crystal layer uye substrate inogona kugadzirwa yezvinhu zvakafanana kana zvinhu zvakasiyana, kuitira kuti homogeneous kana heteroepitaxial kukura kunogona kuwanikwa sezvinodiwa. Nekuti iyo ichangokura imwe crystal layer ichawedzera zvinoenderana nekristaro chikamu cheiyo substrate, inonzi epitaxial layer. Ukobvu hwayo kazhinji hungori mamicrons mashoma. Tichitora silicon semuenzaniso, silicon epitaxial kukura ndeyekurisa jira resilicon ine yakafanana crystal kutaridzika senge substrate, inodzoreka resistivity uye ukobvu, pasilicon single crystal substrate ine chaiyo kristaro kutaridzika. Iyo silicon imwechete crystal layer ine yakakwana lattice chimiro. Kana iyo epitaxial layer inokura pane substrate, iyo yose inonzi epitaxial wafer.
Kune yechinyakare silicon semiconductor indasitiri, kugadzira yakakwirira-frequency uye yakakwirira-simba zvishandiso zvakanangana nesilicon wafers ichasangana nehunyanzvi hwekunetsekana. Semuenzaniso, izvo zvinodikanwa zveyakakwira breakdown voltage, madiki akateedzana kuramba uye diki saturation voltage kudonha munzvimbo yekuunganidza zvakaoma kuwana. Iko kuunzwa kwe epitaxy tekinoroji inogadzirisa zvine hungwaru matambudziko aya. Mhinduro ndeyekukura yakakwirira-resistivity epitaxial layer pane yakaderera-resistivity silicon substrate, uye wozogadzira zvishandiso pane yakakwirira-resistivity epitaxial layer. Nenzira iyi, iyo yakakwira-resistivity epitaxial layer inopa yakakwira yekuputsika voltage yechishandiso, nepo yakaderera-resistivity substrate inoderedza kushorwa kweiyo substrate, nekudaro ichidzikisa kuderera kwemagetsi kudonhedza, nekudaro kuwana yakakwira yekuputsa voltage uye diki Balance pakati pekupokana uye. kudonha kwemagetsi kudiki.
Pamusoro pezvo, tekinoroji epitaxy senge vapor phase epitaxy uye liquid phase epitaxy yeGaAs uye imwe III-V, II-VI uye mamwe mamolecular compound semiconductor zvinhu zvakagadziridzwa zvakanyanya uye zvave hwaro hwemazhinji microwave zvishandiso, optoelectronic zvishandiso uye simba. zvishandiso. Inonyanya kukosha tekinoroji tekinoroji pakugadzira, kunyanya kushandiswa kwakabudirira kwemamorekuru danda uye simbi-organic vapor chikamu epitaxy tekinoroji mumatete akaturikidzana, superlattices, quantum matsime, strained superlattices, uye atomic-level yakatetepa-layer epitaxy yave munda mutsva we semiconductor research. Kuvandudzwa kwe "Energy Belt Project" kwakaisa hwaro hwakasimba.
Nezve chizvarwa chechitatu semiconductor zvishandiso zvine chekuita, anenge ese akadaro semiconductor zvishandiso anogadzirwa pane epitaxial layer, uye iyo silicon carbide wafer pachayo inongoshanda seiyo substrate. Ukobvu hweSiC epitaxial zvinhu, kumashure kwekutakura mutakuri uye mamwe ma parameter anotarisa zvakananga akasiyana emagetsi zvimiro zveSiC zvishandiso. Silicon carbide zvishandiso zveakakwira-voltage maapplication anoisa mberi zvinodiwa zvitsva zvema paramita senge ukobvu hwezvinhu epitaxial uye yekumashure inotakura inotakura. Naizvozvo, silicon carbide epitaxial tekinoroji inoita basa rakasimba mukushandisa zvizere kuita kwesilicon carbide zvishandiso. Kugadzirira kweanenge ese eSiC magetsi emagetsi akavakirwa pamhando yepamusoro yeSiC epitaxial wafers. Kugadzirwa kwe epitaxial layers chikamu chakakosha cheyakafara bandgap semiconductor indasitiri.
Nguva yekutumira: Chivabvu-06-2024