Sei Semiconductor Devices Inoda "Epitaxial Layer"

Kwakabva Zita rokuti "Epitaxial Wafer"

Kugadzirira kweWafer kune matanho maviri makuru: substrate kugadzirira uye epitaxial process. Iyo substrate inogadzirwa ne semiconductor imwe chete crystal zvinhu uye inowanzogadziriswa kugadzira semiconductor zvishandiso. Iyo inogona zvakare kuita epitaxial processing kugadzira epitaxial wafer. Epitaxy inoreva maitiro ekukura imwe nyowani yekristaro layer pane yakanyatsogadziriswa imwe crystal substrate. Iyo itsva crystal crystal inogona kuva yezvinhu zvakafanana ne substrate (homogeneous epitaxy) kana imwe yakasiyana (heterogeneous epitaxy). Sezvo iyo nyowani yekristaro layer ichikura mukuenderana neiyo substrate's crystal orientation, inonzi inonzi epitaxial layer. Iyo mbichana ine epitaxial layer inonzi inonzi epitaxial wafer (epitaxial wafer = epitaxial layer + substrate). Midziyo inogadzirwa pa epitaxial layer inonzi "forward epitaxy," nepo michina yakagadzirwa pa substrate inonzi "reverse epitaxy," apo epitaxial layer inoshanda serutsigiro chete.

Homogeneous uye Heterogeneous Epitaxy

▪Homogeneous Epitaxy:Iyo epitaxial layer uye substrate inogadzirwa nezvinhu zvakafanana: semuenzaniso, Si/Si, GaAs/GaAs, GaP/GaP.

▪Heterogeneous Epitaxy:Iyo epitaxial layer uye substrate inogadzirwa nezvinhu zvakasiyana: semuenzaniso, Si/Al₂O₃, GaS/Si, GaAlAs/GaAs, GaN/SiC, nezvimwe.

Polished Wafers

Ndeapi Matambudziko Anoitwa Epitaxy?

Bulk single crystal zvinhu chete hazvina kukwana kuzadzisa izvo zviri kuramba zvichinetsa zvekugadzira semiconductor mudziyo wekugadzira. Naizvozvo, mukupera kwa1959, iyo yakaonda imwechete yekristaro zvinhu kukura tekinoroji inozivikanwa seepitaxy yakagadziridzwa. Asi epitaxial tekinoroji yakabatsira sei kufambiswa kwezvinhu? Kune silicon, kugadzirwa kwesilicon epitaxy kwakaitika panguva yakaoma apo kugadzirwa kwe-high-frequency, high-power silicon transistors yakatarisana nematambudziko makuru. Kubva pamaonero emisimboti yetransistor, kuwana yakakwira frequency uye simba kunoda kuti dunhu rekuunganidza rekuparara kwevoltage rive rakakwira, uye nhevedzano yekupokana kuve yakaderera, zvichireva kuti saturation voltage inofanirwa kuve diki. Iyo yekutanga inoda yakakwira resistivity mune yekuunganidza zvinhu, nepo iyo yekupedzisira inoda yakaderera resistivity, iyo inogadzira kupokana. Kudzikisa ukobvu hwenzvimbo yekuunganidza kuti uderedze nhevedzano kuramba kwaizoita kuti silicon wafer iite mutete uye kusasimba pakugadzirisa, uye kudzikisa resistivity kunopokana nekutanga chinodiwa. Iko kuvandudzwa kwe epitaxial tekinoroji yakabudirira kugadzirisa nyaya iyi. Mhinduro yaive yekukura yakakwirira resistivity epitaxial layer pane yakaderera-resistivity substrate. Chigadzirwa chacho chinogadzirwa pane epitaxial layer, kuve nechokwadi chepamusoro-soro yekuparara kwe transistor, nepo pasi-resistivity substrate inoderedza kupikisa kwepasi uye inoderedza saturation voltage, kugadzirisa kupesana pakati pezvinodiwa zviviri.

Pamusoro pezvo, epitaxial tekinoroji yeIII-V uye II-VI komputa semiconductors seGaAs, GaN, uye vamwe, kusanganisira mhute chikamu uye fluid chikamu epitaxy, vaona kufambira mberi kwakakosha. Aya matekinoroji ave akakosha mukugadzirwa kweakawanda microwave, optoelectronic, uye magetsi zvishandiso. Kunyanya, hunyanzvi hwakaita senge molecular beam epitaxy (MBE) uye simbi-organic kemikari vapor deposition (MOCVD) yakashandiswa zvinobudirira kune matete akaturikidzana, superlattices, quantum matsime, strained superlattices, uye atomic-scale matete epitaxial layers, achiisa hwaro hwakasimba hwe. kuvandudzwa kweminda mitsva yesemiconductor yakadai se "band engineering."

Mumashandisirwo anoshanda, mizhinji-yakafara-bandgap semiconductor michina inogadzirwa pa epitaxial layers, ine zvinhu zvakaita sesilicon carbide (SiC) zvichishandiswa chete se substrates. Naizvozvo, kudzora iyo epitaxial layer chinhu chakakosha mune yakakura-bandgap semiconductor indasitiri.

Epitaxy Technology: Zvinomwe Zvinokosha Zvimiro

1. Epitaxy inogona kukura yakakwirira (kana yakaderera) resistivity layer pane yakaderera (kana yakakwirira) resistivity substrate.

2. Epitaxy inobvumira kukura kweN (kana P) mhando epitaxial layers paP (kana N) mhando substrates, zvakananga kuumba PN junction pasina nyaya dzekubhadhara dzinomuka pakushandisa kupararira kugadzira PN junction pane imwe crystal substrate.

3. Kana yakabatanidzwa ne teknolojia yemasiki, inosarudza epitaxial kukura inogona kuitwa munzvimbo dzakananga, zvichiita kuti kugadzirwa kwemasekete akabatanidzwa uye zvishandiso zvine zvivako zvakakosha.

4. Kukura kweEpitaxial kunobvumira kutonga kwemhando dzedoping uye kuisa pfungwa, nekwaniso yekuwana kukurumidza kana kuchinja zvishoma nezvishoma mukugadzirisa.

5. Epitaxy inogona kukura zvakasiyana-siyana, zvakasiyana-siyana, zvakasiyana-siyana zvinosanganiswa nemhando dzakasiyana-siyana, kusanganisira ultra-thin layers.

6. Epitaxial kukura kunogona kuitika pamatembiricha pazasi pekunyungudika kwezvinhu, neinodzoreka yekukura mwero, ichibvumira kurongeka kweatomiki-yepamusoro muhupamhi hwemachira.

7. Epitaxy inogonesa kukura kwekristani imwe chete yezvinyorwa zvisingagoni kudhonzwa mumakristasi, zvakadai seGaN uye ternary / quaternary compound semiconductors.

Yakasiyana Epitaxial Layers uye Epitaxial Maitiro

Muchidimbu, epitaxial layers inopa inodzorwa zviri nyore uye yakakwana yekristaro chimiro pane akawanda substrates, ayo anobatsira pakuvandudzwa kwezvinhu zvepamberi.