Semicera's P-mhando SiC Substrate Wafer chinhu chakakosha pakugadzira epamberi emagetsi uye optoelectronic zvishandiso. Aya mawafer akagadzirirwa chaizvo kuti ape kukwidziridzwa kwekuita munzvimbo yepamusoro-simba uye yepamusoro-tembiricha, zvichitsigira kudiwa kuri kukura kwezvinhu zvinoshanda uye zvinogara kwenguva refu.
Iyo P-mhando doping mune yedu SiC wafers inovimbisa kuvandudzwa kwemagetsi conductivity uye kuchaja mutakuri wekufamba. Izvi zvinovaita kunyanya kukodzera kushandiswa mumagetsi emagetsi, ma LED, uye photovoltaic masero, uko kurasikirwa kwesimba rakaderera uye kushanda kwakanyanya kwakakosha.
Yakagadzirwa nemhando yepamusoro yekurongeka uye mhando, Semicera's P-mhando SiC wafers inopa yakanakisa yepamusoro kufanana uye kushoma hurema. Aya hunhu akakosha kumaindasitiri uko kuenderana uye kuvimbika kwakakosha, senge aerospace, mota, uye anovandudza simba zvikamu.
Kuzvipira kwaSemicera kune hunyanzvi uye kugona kunoonekwa mune yedu P-mhando SiC Substrate Wafer. Nekubatanidza aya mawafer mukuita kwako kugadzira, unoita shuwa kuti zvishandiso zvako zvinobatsirwa kubva kune yakasarudzika yekupisa uye magetsi zvivakwa zveSiC, zvichiita kuti vashande nemazvo pasi pemamiriro ezvinhu akaoma.
Kudyara muSemicera's P-mhando SiC Substrate Wafer zvinoreva kusarudza chigadzirwa chinosanganisa yekucheka-kumucheto zvinhu sainzi nehuinjiniya hune hunyanzvi. Semicera yakatsaurirwa kutsigira chizvarwa chinotevera chemagetsi uye optoelectronic tekinoroji, ichipa izvo zvakakosha zvinodiwa kuti ubudirire muindasitiri yesemiconductor.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
