Si Substrate

Tsanangudzo Pfupi:

Nekuita kwayo kwepamusoro uye kuchena kwepamusoro, Semicera's Si Substrate inova nechokwadi chekuvimbika uye kunoenderana kuita mumashandisirwo akakosha, kusanganisira Epi-Wafer uye Gallium Oxide (Ga2O3) kugadzira. Yakagadzirirwa kutsigira kugadzirwa kwemakroelectronics epamberi, iyi substrate inopa kuenderana uye kugadzikana, zvichiita kuti ive chinhu chakakosha chekucheka-kumucheto matekinoroji munharembozha, mota, uye maindasitiri zvikamu.


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Iyo Si Substrate neSemicera chinhu chakakosha mukugadzirwa kwepamusoro-kuita semiconductor zvishandiso. Yakagadzirwa kubva kune yakakwira-kuchena Silicon (Si), iyi substrate inopa yakasarudzika kufanana, kugadzikana, uye yakanakisa conductivity, ichiita kuti ive yakanakira kwakasiyana-siyana epamberi maapplication muindasitiri yesemiconductor. Ingave ichishandiswa muSi Wafer, SiC Substrate, SOI Wafer, kana SiN Substrate kugadzirwa, iyo Semicera Si Substrate inopa inowirirana mhando nekuita kwepamusoro kuzadzisa zvinodiwa zviri kukura zvemagetsi emazuva ano nesainzi yemidziyo.

Kuita Kusingaenzaniswi neKuchena Kwepamusoro uye Kururamisa

Semicera's Si Substrate inogadzirwa ichishandisa epamberi maitiro ayo anovimbisa kuchena kwepamusoro uye yakasimba dimensional kudzora. Iyo substrate inoshanda sehwaro hwekugadzirwa kwezvinhu zvakasiyana-siyana zvepamusoro-soro, zvinosanganisira Epi-Wafers uye AlN Wafers. Kurongeka uye kufanana kweSi Substrate kunoita kuti ive sarudzo yakanakisa yekugadzira yakaonda-firimu epitaxial layers uye zvimwe zvakakosha zvinoshandiswa mukugadzira inotevera-chizvarwa semiconductors. Kunyangwe iwe uri kushanda neGallium Oxide (Ga2O3) kana zvimwe zvinhu zvepamberi, Semicera's Si Substrate inova nechokwadi chepamusoro mazinga ekuvimbika uye kuita.

Zvikumbiro muSemiconductor Manufacturing

Mune iyo semiconductor indasitiri, iyo Si Substrate kubva kuSemicera inoshandiswa muhuwandu hwakawanda hwekushandisa, kusanganisira Si Wafer uye SiC Substrate kugadzirwa, uko inopa yakagadzikana, yakavimbika hwaro hwekuiswa kweanoshanda akaturikidzana. Iyo substrate inoita basa rakakosha mukugadzira maSOI Wafers (Silicon On Insulator), ayo akakosha kune epamberi microelectronics uye akasanganiswa maseketi. Uyezve, Epi-Wafers (epitaxial wafers) yakavakirwa paSi Substrates yakakosha mukugadzira yakakwirira-inoshanda semiconductor zvishandiso semagetsi transistors, diode, uye akabatanidzwa maseketi.

Iyo Si Substrate inotsigirawo kugadzirwa kwemidziyo inoshandisa Gallium Oxide (Ga2O3), inovimbisa yakafara-bhendi zvinhu zvinoshandiswa kune yakakwirira-simba kunyorera mumagetsi emagetsi. Pamusoro pezvo, kuenderana kweSemicera's Si Substrate neAlN Wafers uye mamwe ma substrates epamusoro anovimbisa kuti inokwanisa kusangana nezvinodiwa zvakasiyana-siyana zvemaindasitiri epamusoro-soro, zvichiita kuti ive mhinduro yakanaka yekugadzirwa kwemidziyo yekucheka-cheka munharembozha, mota, uye zvikamu zveindasitiri. .

Yakavimbika uye Inopindirana Hunhu kune Yepamusoro-Tech Zvikumbiro

Iyo Si Substrate naSemicera yakanyatso kugadzirwa kuti isangane neyakaomarara zvinodiwa zve semiconductor kugadzirwa. Yayo yakasarudzika dhizaini yekutendeseka uye yepamusoro-yemhando yepamusoro zvivakwa inoita kuti ive yakanakira zvinhu zvekushandisa mumakaseti masisitimu ekutakura wafer, pamwe nekugadzira yakakwira-chaiyo maseru mumidziyo yesemiconductor. Iko kugona kweiyo substrate kuchengetedza inowirirana mhando pasi pekusiyana kwemaitiro mamiriro inovimbisa kushoma kukanganisa, kuwedzera goho uye kuita kwechigadzirwa chekupedzisira.

Nekupisa kwayo kwepamusoro conductivity, simba remuchina, uye kuchena kwepamusoro, Semicera's Si Substrate ndicho chinhu chesarudzo kune vagadziri vanotarisa kuzadzisa zviyero zvepamusoro zvekurongeka, kuvimbika, uye kuita mukugadzirwa kwesemiconductor.

Sarudza Semicera's Si Substrate yeKuchena-Kuchena, Yakakwira-Kuita Solutions

Kune vanogadzira muindasitiri yesemiconductor, iyo Si Substrate kubva kuSemicera inopa yakasimba, yemhando yepamusoro mhinduro kune dzakasiyana siyana dzekushandisa, kubva kuSi Wafer kugadzirwa kusvika pakugadzirwa kweEpi-Wafers uye SOI Wafers. Nekuchena kusingaenzaniswi, kunyatsojeka, uye kuvimbika, iyi substrate inogonesa kugadzirwa kwekucheka-kumucheto semiconductor zvishandiso, kuve nechokwadi chekushanda kwenguva refu uye kunyatsoshanda. Sarudza Semicera kune yako Si substrate zvinodiwa, uye vimba nechigadzirwa chakagadzirirwa kusangana nezvinodiwa zveamangwana tekinoroji.

Items

Kugadzirwa

Tsvakurudzo

Dummy

Crystal Parameters

Polytype

4H

Kutadza kwekutarisa pamusoro

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-mhando Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Ukobvu

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat urefu

47.5±1.5mm

Secondary flat

Hapana

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Mberi(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Chimiro

Micropipe density

<1 pa/cm2

<10 ea/cm2

<15 ea/cm2

Metal tsvina

≤5E10atomu/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Mberi Hunhu

Mberi

Si

Surface finish

Si-face CMP

Zvimedu

≤60ea/wafer (saizi≥0.3μm)

NA

Makwara

≤5ea/mm. Kureba kwekuwedzera ≤Diameter

Cumulative kureba≤2*Diameter

NA

Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa

Hapana

NA

Edge chips/indents/fracture/hex plates

Hapana

Polytype nzvimbo

Hapana

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

Hapana

Back Quality

Back finish

C-chiso CMP

Makwara

≤5ea/mm,Cumulative kureba≤2*Diameter

NA

Kuremara kumashure (kumucheto machipisi / indents)

Hapana

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (kubva kumusoro kumucheto)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-yakagadzirira ine vacuum packaging

Multi-wafer kaseti kurongedza

* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD.

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SiC wafers

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