Iyo Si Substrate neSemicera chinhu chakakosha mukugadzirwa kwepamusoro-kuita semiconductor zvishandiso. Yakagadzirwa kubva kune yakakwira-kuchena Silicon (Si), iyi substrate inopa yakasarudzika kufanana, kugadzikana, uye yakanakisa conductivity, ichiita kuti ive yakanakira kwakasiyana-siyana epamberi maapplication muindasitiri yesemiconductor. Ingave ichishandiswa muSi Wafer, SiC Substrate, SOI Wafer, kana SiN Substrate kugadzirwa, iyo Semicera Si Substrate inopa inowirirana mhando nekuita kwepamusoro kuzadzisa zvinodiwa zviri kukura zvemagetsi emazuva ano nesainzi yemidziyo.
Kuita Kusingaenzaniswi neKuchena Kwepamusoro uye Kururamisa
Semicera's Si Substrate inogadzirwa ichishandisa epamberi maitiro ayo anovimbisa kuchena kwepamusoro uye yakasimba dimensional kudzora. Iyo substrate inoshanda sehwaro hwekugadzirwa kwezvinhu zvakasiyana-siyana zvepamusoro-soro, zvinosanganisira Epi-Wafers uye AlN Wafers. Kurongeka uye kufanana kweSi Substrate kunoita kuti ive sarudzo yakanakisa yekugadzira yakaonda-firimu epitaxial layers uye zvimwe zvakakosha zvinoshandiswa mukugadzira inotevera-chizvarwa semiconductors. Kunyangwe iwe uri kushanda neGallium Oxide (Ga2O3) kana zvimwe zvinhu zvepamberi, Semicera's Si Substrate inova nechokwadi chepamusoro mazinga ekuvimbika uye kuita.
Zvikumbiro muSemiconductor Manufacturing
Mune iyo semiconductor indasitiri, iyo Si Substrate kubva kuSemicera inoshandiswa muhuwandu hwakawanda hwekushandisa, kusanganisira Si Wafer uye SiC Substrate kugadzirwa, uko inopa yakagadzikana, yakavimbika hwaro hwekuiswa kweanoshanda akaturikidzana. Iyo substrate inoita basa rakakosha mukugadzira maSOI Wafers (Silicon On Insulator), ayo akakosha kune epamberi microelectronics uye akasanganiswa maseketi. Uyezve, Epi-Wafers (epitaxial wafers) yakavakirwa paSi Substrates yakakosha mukugadzira yakakwirira-inoshanda semiconductor zvishandiso semagetsi transistors, diode, uye akabatanidzwa maseketi.
Iyo Si Substrate inotsigirawo kugadzirwa kwemidziyo inoshandisa Gallium Oxide (Ga2O3), inovimbisa yakafara-bhendi zvinhu zvinoshandiswa kune yakakwirira-simba kunyorera mumagetsi emagetsi. Pamusoro pezvo, kuenderana kweSemicera's Si Substrate neAlN Wafers uye mamwe ma substrates epamusoro anovimbisa kuti inokwanisa kusangana nezvinodiwa zvakasiyana-siyana zvemaindasitiri epamusoro-soro, zvichiita kuti ive mhinduro yakanaka yekugadzirwa kwemidziyo yekucheka-cheka munharembozha, mota, uye zvikamu zveindasitiri. .
Yakavimbika uye Inopindirana Hunhu kune Yepamusoro-Tech Zvikumbiro
Iyo Si Substrate naSemicera yakanyatso kugadzirwa kuti isangane neyakaomarara zvinodiwa zve semiconductor kugadzirwa. Yayo yakasarudzika dhizaini yekutendeseka uye yepamusoro-yemhando yepamusoro zvivakwa inoita kuti ive yakanakira zvinhu zvekushandisa mumakaseti masisitimu ekutakura wafer, pamwe nekugadzira yakakwira-chaiyo maseru mumidziyo yesemiconductor. Iko kugona kweiyo substrate kuchengetedza inowirirana mhando pasi pekusiyana kwemaitiro mamiriro inovimbisa kushoma kukanganisa, kuwedzera goho uye kuita kwechigadzirwa chekupedzisira.
Nekupisa kwayo kwepamusoro conductivity, simba remuchina, uye kuchena kwepamusoro, Semicera's Si Substrate ndicho chinhu chesarudzo kune vagadziri vanotarisa kuzadzisa zviyero zvepamusoro zvekurongeka, kuvimbika, uye kuita mukugadzirwa kwesemiconductor.
Sarudza Semicera's Si Substrate yeKuchena-Kuchena, Yakakwira-Kuita Solutions
Kune vanogadzira muindasitiri yesemiconductor, iyo Si Substrate kubva kuSemicera inopa yakasimba, yemhando yepamusoro mhinduro kune dzakasiyana siyana dzekushandisa, kubva kuSi Wafer kugadzirwa kusvika pakugadzirwa kweEpi-Wafers uye SOI Wafers. Nekuchena kusingaenzaniswi, kunyatsojeka, uye kuvimbika, iyi substrate inogonesa kugadzirwa kwekucheka-kumucheto semiconductor zvishandiso, kuve nechokwadi chekushanda kwenguva refu uye kunyatsoshanda. Sarudza Semicera kune yako Si substrate zvinodiwa, uye vimba nechigadzirwa chakagadzirirwa kusangana nezvinodiwa zveamangwana tekinoroji.
Items | Kugadzirwa | Tsvakurudzo | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
Electrical Parameters | |||
Dopant | n-mhando Nitrogen | ||
Resistivity | 0.015-0.025ohm·cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Ukobvu | 350±25 μm | ||
Primary flat orientation | [1-100]±5° | ||
Primary flat urefu | 47.5±1.5mm | ||
Secondary flat | Hapana | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Chimiro | |||
Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Metal tsvina | ≤5E10atomu/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Mberi Hunhu | |||
Mberi | Si | ||
Surface finish | Si-face CMP | ||
Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
Edge chips/indents/fracture/hex plates | Hapana | ||
Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
Front laser marking | Hapana | ||
Back Quality | |||
Back finish | C-chiso CMP | ||
Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
Back roughness | Ra≤0.2nm (5μm*5μm) | ||
Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
Edge | |||
Edge | Chamfer | ||
Packaging | |||
Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. |