Tsanangudzo
Isu tinochengetedza kushivirira kwakanyanya patinenge tichishandisa iyoSiC coating, uchishandisa yakakwirira-chaiyo machining kuti ive nechokwadi yunifomu susceptor mbiri. Isu zvakare tinogadzira zvinhu zvine akanakira emagetsi ekudzivirira zvivakwa zvekushandisa mune inductively heated masisitimu. Zvese zvikamu zvakapedzwa zvinouya nekuchena uye dimensional yekuteerera chitupa.
Kambani yedu inopaSiC coatingprocess masevhisi neCVD nzira pamusoro pegraphite, ceramics uye zvimwe zvinhu, kuitira kuti magasi akakosha ane kabhoni nesilicon aite pakupisa kwepamusoro kuti awane kuchena kweSiC mamorekuru, mamorekuru akaiswa pamusoro pezvinhu zvakavharwa, achigadzira SIC inodzivirira layer. Iyo SIC yakaumbwa inosungirirwa zvakasimba kune iyo graphite base, ichipa iyo graphite base yakakosha zvivakwa, nekudaro ichiita pamusoro peiyo graphite compact, Porosity-isina, yakakwirira tembiricha kuramba, corrosion kuramba uye oxidation kuramba.
CVD process inopa yakanyanya kuchena kuchena uye theoretical density yeSiC coatingpasina porosity. Chii zvakare, sezvo silicon carbide yakaoma kwazvo, inogona kukwenenzverwa kune girazi-rakafanana nepamusoro.CVD silicon carbide (SiC) kupfekayakaunza mabhenefiti akati wandei anosanganisira ultra-yakakwirira kuchena kwepamusoro uye yakanyanya kupfeka kusimba. Sezvo zvigadzirwa zvakavharwa zvine mashandiro akanaka mune yakakwira vacuum uye yakakwirira tembiricha mamiriro, iwo akanakira maapplication muindasitiri yesemiconductor uye imwe yakanyanya-yakachena nharaunda. Isu tinopawo pyrolytic graphite (PG) zvigadzirwa.
Main Features
1. High tembiricha oxidation kuramba:
iyo oxidation kuramba ichiri yakanaka kwazvo kana tembiricha yakakwira kusvika 1600 C.
2. Kuchena kwepamusoro: yakagadzirwa nemakemikari vapor deposition pasi pekushisa kwakanyanya kweklorination mamiriro.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, munyu uye organic reagents.
Zvikuru Zvinotsanangurwa zveCVD-SIC Coatings
| SiC-CVD | ||
| Density | (g/cc) | 3.21 |
| Flexural simba | (Mpa) | 470 |
| Kuwedzera kupisa | (10-6/K) | 4 |
| Thermal conductivity | (W/mK) | 300 |
Application
CVD silicon carbide coating yakashandiswa mumaindasitiri esemiconductor kare, senge MOCVD tireyi, RTP uye oxide etching chamber sezvo silicon nitride ine yakakura yekupisa kuvhunduka uye inogona kumira yakakwira simba plasma.
-Silicon carbide inoshandiswa zvakanyanya mu semiconductor uye coating.
Application
Supply Ability:
10000 Piece / Zvimedu pamwedzi
Packaging & Delivery:
Packing: Yakajairwa & Yakasimba Packing
Poly bag + Bhokisi + Katoni + Pallet
Port:
Ningbo/Shenzhen/Shanghai
Nguva Yekutungamira:
| Huwandu(Zvidimbu) | 1 - 1000 | >1000 |
| Est. Nguva(mazuva) | 30 | Kutaurirana |
