Silicon carbide cantilever paddle

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Silicon carbide paddle, inozivikanwawo sesilicon carbide cantilever paddle, silicon carbide cantilever beam imhando yesilicon carbide ceramic zvigadzirwa mushure me1850.℃tembiricha yakanyanya kunyura, asi tembiricha yakakwira sintering silicon carbide ceramic chinhu chakakosha checeramic zvigadzirwa, nezvimedu zvakanaka.α-SiC uye zvinowedzera zvakatsikirirwa mune isina chinhu, inosangana nesilicon yemvura pakupisa kwakanyanya, kabhoni mune isina chinhu uye kupinza kweSi reaction, kuumbwa kweβ-SiC,Uye yakasanganiswa ne α-SiC, silicon yemahara yakazadza porosity, kuitira kuti iwane yakakwirira density ceramic zvinhu; Iyo ine akasiyana emhando yepamusoro zvimiro zveindasitiri ceramics.

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SiC Cantilever paddleiri kushandiswa muchoto chekuputira muchoto chephotovoltaic indasitiri yekupfekedza monocrystalline uye polycrystalline silicon wafers. Hunhu hwayo hunoita kuti ikwanise kutsungirira kupisa kwakanyanya uye ngura, zvichiita kuti irarame kwenguva refu.
TheSiC Cantilever paddleinoburitsa mabhoti eSiC / quartz anotakura zvimedu zvesilicon mukati mekushisa kwekushisa kwekushisa kwekuputira chubhu yevira.
Hurefu hweduSiC Cantilever paddlekubva 1,500 kusvika 3,500 mm.SiC Cantilever paddle'sdimension inogona kugadzirwa zvinoenderana nezvinodiwa nemutengi.

Zvenyama zvimiro zveRecrystallized Silicon Carbide
Property	Typical Value
Tembiricha yekushanda (°C)	1600°C (neokisijeni), 1700°C (inoderedza nharaunda)
SiC content	> 99.96%
Free Si content	<0.1%
Bulk density	2.60-2.70 g/cm³
Inooneka porosity	<16%
Kumanikidza simba	> 600 MPa
Kutonhora kukotama simba	80-90 MPa (20°C)
Simba rekukotama rinopisa	90-100 MPa (1400°C)
Kuwedzera kupisa @1500°C	4.70 10^-6/°C
Thermal conductivity @1200°C	23 W/m•K
Elastic modulus	240 GPA
Thermal shock resistance	Kunyanya kunaka