Silicon carbide RTA inotakura ndiro ye semiconductor

Silicon carbide RTA carrier plate ye semiconductor Featured Image

Tsanangudzo Pfupi:

Silicon carbide rudzi rutsva rwekeramics ine yakakwira mutengo kuita uye yakanakisa zvinhu zvivakwa. Nekuda kwezvimiro zvakaita sesimba rakakwirira uye kuoma, kukwirira tembiricha kuramba, hukuru hwekupisa conductivity uye kemikari corrosion kuramba, Silicon Carbide inogona kumirisana nemakemikari ese epakati. Naizvozvo, SiC inoshandiswa zvakanyanya mumigodhi yemafuta, makemikari, muchina uye airspace, kunyangwe simba renyukireya nemauto vane zvavanoda kuSIC. Imwe yakajairika application yatinogona kupa zvindori zvechisimbiso zvepombi, vharafu uye nhumbi dzekudzivirira nezvimwe.

Isu tinokwanisa kugadzira uye kugadzira zvinoenderana neako chaiwo hukuru nemhando yakanaka uye inonzwisisika yekuendesa nguva.

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Tsanangudzo

Kambani yedu inopa SiC yekuvhara maitiro masevhisi neCVD nzira pamusoro pegraphite, ceramics uye zvimwe zvinhu, kuitira kuti akakosha magasi ane kabhoni nesilicon aite pakupisa kwepamusoro kuti awane kuchena kwakanyanya kweSiC mamorekuru, mamorekuru akaiswa pamusoro pezvinhu zvakavharwa, kugadzira SIC inodzivirira layer.

Main Features

1. High tembiricha oxidation kuramba:
iyo oxidation kuramba ichiri yakanaka kwazvo kana tembiricha yakakwira kusvika 1600 C.
2. High kuchena : yakagadzirwa nemakemikari vapor deposition pasi pekushisa kwakanyanya kweklorination mamiriro.
3. Erosion resistance: high hardness, compact surface, fine particles.
4. Corrosion resistance: acid, alkali, munyu uye organic reagents.

Zvikuru Zvinotsanangurwa zveCVD-SIC Coating

SiC-CVD Properties
Crystal Structure	FCC β chikamu
Density	g/cm³	3.21
Kuoma	Vickers kuoma	2500
Saizi yezviyo	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-poindi)	415
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Kuwedzera kweThermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300