Iyo Silicon Firimu naSemicera ndeyepamusoro-mhando, yakanyatso-engineered zvinhu zvakagadzirirwa kuzadzisa zvinoomesesa zvinodiwa zveiyo semiconductor indasitiri. Yakagadzirwa kubva kusilicon yakachena, iyi yakaonda-firimu mhinduro inopa yakanakisa kufanana, kuchena kwepamusoro, uye yakasarudzika magetsi uye ekupisa zvivakwa. Yakanakira kushandiswa mune akasiyana semiconductor application, kusanganisira kugadzirwa kweSi Wafer, SiC Substrate, SOI Wafer, SiN Substrate, uye Epi-Wafer. Semicera's Silicon Firimu inovimbisa kuita kwakavimbika uye kunoenderana, zvichiita kuti ive chinhu chakakosha kune advanced microelectronics.
Hunhu Hwepamusoro uye Kuita kweSemiconductor Manufacturing
Semicera's Silicon Firimu inozivikanwa nekuda kwesimba rayo rakatanhamara remuchina, kugadzikana kwakanyanya kwemafuta, uye kuderera kwemazinga, izvo zvakakosha mukugadzirwa kweakakwira-performance semiconductors. Ingave yakashandiswa mukugadzirwa kweGallium Oxide (Ga2O3) zvishandiso, AlN Wafer, kana Epi-Wafers, iyo firimu inopa hwaro hwakasimba hwekuonda-firimu deposition uye epitaxial kukura. Kuenderana kwayo nemamwe semiconductor substrates seSiC Substrate uye SOI Wafers inovimbisa kusanganisa isina musono mumagadzirirwo aripo ekugadzira, zvichibatsira kuchengetedza goho repamusoro uye inowirirana mhando yechigadzirwa.
Zvishandiso muSemiconductor Indasitiri
Muindasitiri yesemiconductor, Semicera's Silicon Firimu rinoshandiswa mumhando dzakasiyana dzekushandisa, kubva mukugadzirwa kweSi Wafer uye SOI Wafer kune mamwe mashandisirwo ane hunyanzvi seSiN Substrate uye Epi-Wafer kusikwa. Kuchena kwepamusoro uye kurongeka kwefirimu iri kunoita kuti ive yakakosha mukugadzirwa kwezvinhu zvepamberi zvinoshandiswa mune zvese kubva kumamicroprocessors uye maseketi akabatanidzwa kune optoelectronic zvishandiso.
Iyo Silicon Firimu inoita basa rakakosha mune semiconductor maitiro senge epitaxial kukura, wafer bonding, uye nhete-firimu deposition. Zvivakwa zvaro zvinovimbika zvinonyanya kukosha kune maindasitiri anoda zvakanyanya kudzorwa nharaunda, senge dzimba dzakachena mune semiconductor machira. Pamusoro pezvo, iyo Silicon Firimu inogona kubatanidzwa mumakaseti masisitimu ekubata zvakanaka wafer kubata uye kutakura panguva yekugadzira.
Kuvimbika Kwenguva Yakareba uye Kuenderana
Imwe yemabhenefiti akakosha ekushandisa Semicera's Silicon Firimu kuvimbika kwayo kwenguva refu. Nekusimba kwayo kwakaringana uye kunoenderana mhando, iyi firimu inopa mhinduro yakavimbika kune yakakwirira-vhoriyamu yekugadzira nharaunda. Kunyangwe ichishandiswa mumhando yepamusoro-chaiyo semiconductor zvishandiso kana zvepamberi zvemagetsi zvikumbiro, Semicera's Silicon Firimu inova nechokwadi chekuti vagadziri vanokwanisa kuwana kuita kwepamusoro uye kuvimbika pane dzakasiyana siyana zvigadzirwa.
Sei Kusarudza Semicera's Silicon Firimu?
Iyo Silicon Firimu kubva kuSemicera chinhu chakakosha chekucheka-kumucheto mashandisirwo muindasitiri yesemiconductor. Yayo yepamusoro-inoshanda zvivakwa, zvinosanganisira yakanakisa kugadzikana kwemafuta, kuchena kwepamusoro, uye simba remuchina, inoita kuti ive sarudzo yakanaka kune vagadziri vari kutsvaga kuwana iyo yepamusoro miitiro mukugadzira semiconductor. Kubva kuSi Wafer uye SiC Substrate kusvika mukugadzirwa kweGallium Oxide Ga2O3 zvishandiso, firimu iri rinoburitsa isingaenzaniswi mhando nekuita.
NeSemicera's Silicon Firimu, unogona kuvimba nechigadzirwa chinosangana nezvinodiwa zvemazuva ano semiconductor kugadzira, ichipa hwaro hwakavimbika hwechizvarwa chinotevera chemagetsi.
Items | Kugadzirwa | Tsvakurudzo | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
Electrical Parameters | |||
Dopant | n-mhando Nitrogen | ||
Resistivity | 0.015-0.025ohm·cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Ukobvu | 350±25 μm | ||
Primary flat orientation | [1-100]±5° | ||
Primary flat urefu | 47.5±1.5mm | ||
Secondary flat | Hapana | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Chimiro | |||
Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Metal tsvina | ≤5E10atomu/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Mberi Hunhu | |||
Mberi | Si | ||
Surface finish | Si-face CMP | ||
Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
Edge chips/indents/fracture/hex plates | Hapana | ||
Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
Front laser marking | Hapana | ||
Back Quality | |||
Back finish | C-chiso CMP | ||
Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
Back roughness | Ra≤0.2nm (5μm*5μm) | ||
Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
Edge | |||
Edge | Chamfer | ||
Packaging | |||
Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. |