Silicon nitride yakasungirirwa silicon carbide
Si3N4 yakasungirirwa SiC ceramic refractory material, yakasanganiswa nepamusoro yakachena SIC poda yakatsetseka uye Silicon poda, mushure mekutsvedza kukanda kosi, kuita sintered pasi pe1400 ~ 1500 ° C. Munguva yekupisa, kuzadza iyo yakakwira yakachena Nitrogen muchoto, ipapo silicon ichaita neNitrogen uye inogadzira Si3N4, Saka Si3N4 yakasungirirwa SiC zvinhu inoumbwa nesilicon nitride (23%) uye silicon carbide (75%) sechinhu chikuru mbishi. , yakasanganiswa ne organic material, uye yakaumbwa nemusanganiswa, extrusion kana kudira, yozoitwa mushure mekuoma uye nitrogenization.
Zvimiro uye zvakanakira:
1.High tembiricha kushivirira
2.High thermal conductivity uye shock resistance
3.High mechanical simba uye abrasion resistance
4.Excellent simba rekushandisa uye kusagadzikana kwekuora
Isu tinopa emhando yepamusoro uye nemachini akagadzirwa NSiC ceramic zvikamu izvo zvinogadzira
1.Slip casting
2.Extruding
3.Uni Axial Pressing
4.Isostatic Pressing
Material Datasheet
| > Kuumbwa Kwemakemikari | Sic | 75% |
| Si3N4 | ≥23% | |
| Free Si | 0% | |
| Kuwanda kwehuwandu (g/cm3) | 2.70～2.80 | |
| Zviripachena porosity (%) | 12～15 | |
| Bend simba pa20 ℃(MPa) | 180～190 | |
| Bend simba pa1200 ℃(MPa) | 207 | |
| Bend simba pa1350 ℃(MPa) | 210 | |
| Kudzvinyirira simba pa20 ℃(MPa) | 580 | |
| Thermal conductivity pa1200 ℃ (w/mk) | 19.6 | |
| Thermal yekuwedzera coefficient pa1200 ℃(x 10-6/C) | 4.70 | |
| Thermal shock resistance | Excellent | |
| Max. tembiricha (℃) | 1600 | |
