Semicera's Silicon Nitride Ceramic Substrate inomiririra iyo yepamusoro tekinoroji yezvigadzirwa zvemhando yepamusoro, ichipa yakasarudzika yekupisa conductivity uye yakasimba michina zvivakwa. Yakagadzirirwa kushanda kwepamusoro-soro, iyi substrate inokunda munzvimbo dzinoda kuvimbika kwekutonga kwekupisa uye kutendeseka kwechimiro.
Yedu Silicon Nitride Ceramic Substrates yakagadzirirwa kumirisana nekupisa kwakanyanya uye nehutsinye mamiriro, zvichiita kuti ive yakakodzera kune yakakwirira-simba uye yakakwirira-frequency zvigadzirwa zvemagetsi. Kupisa kwavo kwepamusoro-soro kunokonzera kupisa kunopisa, izvo zvakakosha pakuchengetedza kushanda uye hupenyu hurefu hwezvikamu zvemagetsi.
Kuzvipira kwaSemicera kune mhando kunoonekwa mune yega yega Silicon Nitride Ceramic Substrate yatinogadzira. Imwe neimwe substrate inogadzirwa uchishandisa mamiriro-e-iyo-maitiro maitiro ekuona kuenderana kuita uye kushoma kukanganisa. Iyi yepamusoro nhanho yekurongeka inotsigira zvakaomarara zvinodikanwa zvemaindasitiri senge mota, aerospace, uye kufonera.
Pamusoro pemabhenefiti avo ekupisa uye emuchina, ma substrates edu anopa akanakisa emagetsi ekudzivirira zvivakwa, ayo anobatsira pakuvimbika kwese kwemidziyo yako yemagetsi. Nekudzikisa kukanganiswa kwemagetsi uye kuwedzera kugadzikana kwechikamu, Semicera's Silicon Nitride Ceramic Substrates inoita basa rakakosha mukugadzirisa kushanda kwechishandiso.
Kusarudza Semicera's Silicon Nitride Ceramic Substrate zvinoreva kuisa mari muchigadzirwa chinopa zvese zviri zviviri kuita kwepamusoro uye kusimba. Ma substrates edu akagadzirwa kuti asangane nezvinodiwa zvemhando yepamusoro zvemagetsi zvikumbiro, kuve nechokwadi chekuti zvishandiso zvako zvinobatsirwa nekucheka-kumucheto zvinhu tekinoroji uye kuvimbika kwakasiyana.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
