Silicon pane Insulator Waferskubva kuSemicera zvakagadzirirwa kusangana nekukura kuri kuda kwepamusoro-kuita semiconductor mhinduro. Yedu SOI wafers inopa hukuru hwemagetsi kuita uye yakaderedzwa parasitic mudziyo capacitance, ichiita kuti ive yakakodzera kune epamberi maapplication akadai seMEMS zvishandiso, ma sensors, uye akasanganiswa maseketi. Semicera hunyanzvi mukugadzira wafer inovimbisa kuti imwe neimweSOI waferinopa yakavimbika, yemhando yepamusoro mhedzisiro yeinotevera-chizvarwa tekinoroji zvinodiwa.
YeduSilicon pane Insulator Waferskupa mwero wakakwana pakati pekuita-mutengo uye kuita. Nemutengo we soi wafer unowedzera kukwikwidza, aya mawaferi anoshandiswa zvakanyanya mumhando dzakasiyana dzemaindasitiri, anosanganisira microelectronics uye optoelectronics. Semicera's yakakwirira-chaiyo yekugadzira maitiro inovimbisa yepamusoro wafer bonding uye kufanana, ichiita kuti ive yakakodzera kune akasiyana maapplication, kubva pamhango SOI wafers kune yakajairwa silicon wafers.
Zvinokosha:
•Yepamusoro-mhando SOI wafers akagadziridzwa kuita muMEMS uye mamwe maapplication.
•Kukwikwidza soi wafer mutengo kumabhizinesi ari kutsvaga mhinduro dzepamberi pasina kukanganisa mhando.
•Yakanakira yekucheka-kumucheto matekinoroji, ichipa yakawedzera magetsi ega uye kugona musilicon pane insulator masisitimu.
YeduSilicon pane Insulator Wafersdzakagadzirwa kuti dzipe mhinduro dzepamusoro-soro, dzichitsigira iyo inotevera wave yekuvandudza mune semiconductor tekinoroji. Kana uri kushanda pamhangoSOI zvimedu, MEMS zvishandiso, kana silicon pane insulator zvikamu, Semicera inoburitsa mawafer anosangana nepamusoro-soro zviyero muindasitiri.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
