Semicera Silicon Substrates inogadzirwa kuti isangane neyakaomarara zvinodiwa zveiyo semiconductor indasitiri, ichipa isingaenzaniswi mhando uye nemazvo. Aya ma substrates anopa hwaro hwakavimbika hweakasiyana maapplication, kubva kune akasanganiswa maseketi kusvika kune photovoltaic masero, kuve nechokwadi chekuita kwakanyanya uye hupenyu hurefu.
Kuchena kwepamusoro kweSemicera Silicon Substrates inovimbisa hurema hudiki uye hunhu hwemagetsi epamusoro, ayo akakosha pakugadzirwa kwemhando yepamusoro yemagetsi zvinhu. Iyi nhanho yekuchena inobatsira mukudzikisira kurasikirwa kwesimba uye nekuvandudza kugona kwese kwesemiconductor zvishandiso.
Semicera inoshandisa nyika-ye-iyo-hunyanzvi nzira dzekugadzira kugadzira silicon substrates ine yakasarudzika yakafanana uye flatness. Kurongeka uku kwakakosha kuti uwane mhedzisiro inowirirana mukugadzirwa kwesemiconductor, uko kunyangwe kudiki kudiki kunogona kukanganisa kuita kwechishandiso uye goho.
Inowanikwa muhukuru hwakasiyana uye zvirevo, Semicera Silicon Substrates inobata kune dzakasiyana siyana dzemaindasitiri. Kunyangwe iwe uri kugadzira ekucheka-kumucheto microprocessors kana solar panels, aya substrates anopa kuchinjika uye kuvimbika kunodiwa kune yako chaiyo application.
Semicera yakatsaurirwa kutsigira hunyanzvi uye kugona muindasitiri yesemiconductor. Nekupa emhando yepamusoro silicon substrates, isu tinogonesa vagadziri kusundira miganhu yetekinoroji, vachiendesa zvigadzirwa zvinosangana nezvinoda kuitika zvemusika. Vimba neSemicera kune yako inotevera-chizvarwa zvemagetsi uye photovoltaic mhinduro.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
