Semicera's SiN Ceramics Plain Substrates inopa yakakwira-inoshanda mhinduro kune akasiyana emagetsi uye maindasitiri ekushandisa. Anozivikanwa neakanakisa ekupisa conductivity uye simba remagetsi, aya ma substrates anovimbisa kushanda kwakavimbika munzvimbo dzinoda.
Yedu SiN (Silicon Nitride) ceramics yakagadzirirwa kubata zvakanyanya tembiricha uye yakanyanya-kushushikana mamiriro, ichiita kuti ive yakakodzera kune yakakwirira-simba zvemagetsi uye advanced semiconductor zvishandiso. Kugara kwavo uye kuramba kuvhunduka kwekupisa kunoita kuti ive yakakodzera kushandiswa mumashandisirwo uko kuvimbika uye kuita kwakakosha.
Semicera's chaiyo kugadzira maitiro anovimbisa kuti yega yega substrate inosangana neakaomesesa emhando zviyero. Izvi zvinokonzeresa masubstrates ane ukobvu hunoenderana uye pamusoro pemhando, izvo zvakakosha kuti uwane kuita kwakaringana mumagungano emagetsi uye masisitimu.
Kuwedzera kune yavo yekupisa uye mekiniki mabhenefiti, SiN Ceramics Plain Substrates inopa yakanakisa magetsi ekudzivirira zvivakwa. Izvi zvinogonesa kukanganiswa kwemagetsi kushoma uye zvinobatsira mukugadzikana kwese uye kugona kwezvikamu zvemagetsi, zvichivandudza hupenyu hwavo hwekushanda.
Nekusarudza Semicera's SiN Ceramics Plain Substrates, uri kusarudza chigadzirwa chinosanganisa advanced material science nepamusoro-notch kugadzira. Kuzvipira kwedu kumhando uye hunyanzvi hunovimbisa kuti iwe unogamuchira ma substrates anosangana neakanyanya indasitiri zviyero uye anotsigira budiriro yemapurojekiti ako epamberi tekinoroji.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
