SOI Wafer Silicon PaIsulator

Tsanangudzo Pfupi:

Semicera's SOI Wafer (Silicon On Insulator) inopa yakasarudzika magetsi ega uye kuita kwepamberi semiconductor application. Yakagadzirirwa yemhando yepamusoro yekupisa uye kushanda kwemagetsi, aya mawaferi akanakira epamusoro-kuita akabatanidzwa maseketi. Sarudza Semicera yemhando uye kuvimbika muSOI wafer tekinoroji.


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Semicera's SOI Wafer (Silicon On Insulator) yakagadzirirwa kuendesa epamusoro magetsi ega uye kushanda kwemafuta. Ichi chitsva chewafer chimiro, chine silicon layer pane insulating layer, inova nechokwadi chekusimudzira kushanda kwechishandiso uye kuderedzwa kwesimba rekushandisa, zvichiita kuti ive yakanakira akasiyana emhando yepamusoro-tech application.

Yedu SOI wafers inopa yakasarudzika mabhenefiti kune akasanganiswa maseketi nekudzikisa parasitic capacitance uye nekuvandudza kukurumidza kwechishandiso uye kushanda nesimba. Izvi zvakakosha kumagetsi emazuva ano, uko kushanda kwepamusoro uye kushanda nesimba kwakakosha kune ese mutengi uye maindasitiri ekushandisa.

Semicera inoshandisa nzira dzepamusoro dzekugadzira kugadzira SOI wafers ine inowirirana mhando uye kuvimbika. Aya mawafer anopa zvakanakisa kupisa kwekupisa, zvichiita kuti akwanise kushandiswa munzvimbo dzinonetsa kupisa kupisa, senge mune yakakwirira-density zvigadzirwa zvemagetsi uye masimba ekutonga masisitimu.

Iko kushandiswa kweSOI wafers mukugadzira semiconductor inobvumira kuvandudzwa kwediki, nekukurumidza, uye akavimbika machipisi. Kuzvipira kwaSemicera kune chaiyo engineering inovimbisa kuti maSOI mawafers anosangana nepamusoro-soro anodiwa pakucheka-kumucheto matekinoroji muminda yakaita senhare, mota, uye zvemagetsi zvevatengi.

Kusarudza Semicera's SOI Wafer zvinoreva kuisa mari muchigadzirwa chinotsigira kufambira mberi kwemagetsi uye microelectronic technologies. Mawafer edu akagadzirwa kuti ape kukwidziridzwa kuita uye kusimba, zvichibatsira mukubudirira kwemapurojekiti ako epamusoro-tekinoroji uye kuve nechokwadi chekuti unogara uri pamberi pekuvandudza.

Items

Kugadzirwa

Tsvakurudzo

Dummy

Crystal Parameters

Polytype

4H

Kutadza kwekutarisa pamusoro

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-mhando Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Ukobvu

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat urefu

47.5±1.5mm

Secondary flat

Hapana

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Mberi(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Chimiro

Micropipe density

<1 pa/cm2

<10 ea/cm2

<15 ea/cm2

Metal tsvina

≤5E10atomu/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Mberi Hunhu

Mberi

Si

Surface finish

Si-face CMP

Zvimedu

≤60ea/wafer (saizi≥0.3μm)

NA

Makwara

≤5ea/mm. Kureba kwekuwedzera ≤Diameter

Cumulative kureba≤2*Diameter

NA

Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa

Hapana

NA

Edge chips/indents/fracture/hex plates

Hapana

Polytype nzvimbo

Hapana

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

Hapana

Back Quality

Back finish

C-chiso CMP

Makwara

≤5ea/mm,Cumulative kureba≤2*Diameter

NA

Kuremara kumashure (kumucheto machipisi / indents)

Hapana

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (kubva kumusoro kumucheto)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-yakagadzirira ine vacuum packaging

Multi-wafer kaseti kurongedza

* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD.

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SiC wafers

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