Semicera's SOI Wafer (Silicon On Insulator) yakagadzirirwa kuendesa epamusoro magetsi ega uye kushanda kwemafuta. Ichi chitsva chewafer chimiro, chine silicon layer pane insulating layer, inova nechokwadi chekusimudzira kushanda kwechishandiso uye kuderedzwa kwesimba rekushandisa, zvichiita kuti ive yakanakira akasiyana emhando yepamusoro-tech application.
Yedu SOI wafers inopa yakasarudzika mabhenefiti kune akasanganiswa maseketi nekudzikisa parasitic capacitance uye nekuvandudza kukurumidza kwechishandiso uye kushanda nesimba. Izvi zvakakosha kumagetsi emazuva ano, uko kushanda kwepamusoro uye kushanda nesimba kwakakosha kune ese mutengi uye maindasitiri ekushandisa.
Semicera inoshandisa nzira dzepamusoro dzekugadzira kugadzira SOI wafers ine inowirirana mhando uye kuvimbika. Aya mawafer anopa zvakanakisa kupisa kwekupisa, zvichiita kuti akwanise kushandiswa munzvimbo dzinonetsa kupisa kupisa, senge mune yakakwirira-density zvigadzirwa zvemagetsi uye masimba ekutonga masisitimu.
Iko kushandiswa kweSOI wafers mukugadzira semiconductor inobvumira kuvandudzwa kwediki, nekukurumidza, uye akavimbika machipisi. Kuzvipira kwaSemicera kune chaiyo engineering inovimbisa kuti maSOI mawafers anosangana nepamusoro-soro anodiwa pakucheka-kumucheto matekinoroji muminda yakaita senhare, mota, uye zvemagetsi zvevatengi.
Kusarudza Semicera's SOI Wafer zvinoreva kuisa mari muchigadzirwa chinotsigira kufambira mberi kwemagetsi uye microelectronic technologies. Mawafer edu akagadzirwa kuti ape kukwidziridzwa kuita uye kusimba, zvichibatsira mukubudirira kwemapurojekiti ako epamusoro-tekinoroji uye kuve nechokwadi chekuti unogara uri pamberi pekuvandudza.
Items | Kugadzirwa | Tsvakurudzo | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
Electrical Parameters | |||
Dopant | n-mhando Nitrogen | ||
Resistivity | 0.015-0.025ohm·cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Ukobvu | 350±25 μm | ||
Primary flat orientation | [1-100]±5° | ||
Primary flat urefu | 47.5±1.5mm | ||
Secondary flat | Hapana | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Chimiro | |||
Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Metal tsvina | ≤5E10atomu/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Mberi Hunhu | |||
Mberi | Si | ||
Surface finish | Si-face CMP | ||
Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
Edge chips/indents/fracture/hex plates | Hapana | ||
Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
Front laser marking | Hapana | ||
Back Quality | |||
Back finish | C-chiso CMP | ||
Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
Back roughness | Ra≤0.2nm (5μm*5μm) | ||
Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
Edge | |||
Edge | Chamfer | ||
Packaging | |||
Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. |