Semicera inosuma iyoWafer Cassette Carrier, mhinduro yakakosha kune yakachengeteka uye inobudirira kubata kwema semiconductor wafers. Mutakuri uyu akagadzirwa kuti asangane nezvinoomesesa zvinodiwa zveiyo semiconductor indasitiri, kuve nechokwadi chekuchengetedzwa uye kutendeseka kwewafers ako mukati mekugadzira maitiro.
Zvinokosha:
•Kuvaka kwakasimba:TheWafer Cassette Carrierinovakwa kubva kumhando yepamusoro-soro, yakasimba zvinhu zvinotsungirira kuomarara kwenzvimbo dzesemiconductor, zvichipa dziviriro yakavimbika kubva pakusvibiswa uye kukuvara kwemuviri.
•Kurongeka Kwazvo:Yakagadzirirwa kurongeka kwakaringana, mutakuri uyu anovimbisa kuti wafers akachengetedzwa zvakachengeteka, achidzikisa njodzi yekusarongeka kana kukuvadzwa panguva yekufambisa.
•Kubata Nyore:Ergonomically yakagadzirirwa nyore kushandisa, mutakuri anorerutsa kurodha uye kurodha maitiro, kuvandudza mafambiro ekushanda munzvimbo dzakachena.
•Kuenderana:Inoenderana neyakasiyana siyana saizi yewafer uye mhando, ichiita kuti ienderane kune akasiyana semiconductor yekugadzira zvinodiwa.
Sangana nekudzivirirwa kusingaenzaniswi uye kuve nyore neSemicera'sWafer Cassette Carrier. Mutakuri wedu akagadzirirwa kusangana neakanyanya mwero ekugadzira semiconductor, kuve nechokwadi chekuti wafers ako anoramba ari mupristine mamiriro kubva pakutanga kusvika pakupedzisira. Vimba neSemicera kuendesa mhando uye kuvimbika kwaunoda kune ako akanyanya kukosha maitiro.
| Items | Kugadzirwa | Tsvakurudzo | Dummy |
| Crystal Parameters | |||
| Polytype | 4H | ||
| Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
| Electrical Parameters | |||
| Dopant | n-mhando Nitrogen | ||
| Resistivity | 0.015-0.025ohm·cm | ||
| Mechanical Parameters | |||
| Diameter | 150.0±0.2mm | ||
| Ukobvu | 350±25 μm | ||
| Primary flat orientation | [1-100]±5° | ||
| Primary flat urefu | 47.5±1.5mm | ||
| Secondary flat | Hapana | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| Warp | ≤35 μm | ≤45 μm | ≤55 μm |
| Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Chimiro | |||
| Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
| Metal tsvina | ≤5E10atomu/cm2 | NA | |
| BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
| TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
| Mberi Hunhu | |||
| Mberi | Si | ||
| Surface finish | Si-face CMP | ||
| Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
| Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
| Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
| Edge chips/indents/fracture/hex plates | Hapana | ||
| Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
| Front laser marking | Hapana | ||
| Back Quality | |||
| Back finish | C-chiso CMP | ||
| Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
| Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
| Back roughness | Ra≤0.2nm (5μm*5μm) | ||
| Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
| Edge | |||
| Edge | Chamfer | ||
| Packaging | |||
| Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
| * Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. | |||
