Wafer Cassette

Tsanangudzo Pfupi:

Wafer Cassette- Precision-engineered kuitira kuchengetedza kwakachengeteka uye kuchengetedza semiconductor wafers, kuve nechokwadi chekuchengetedzwa kwakakwana uye kuchena mukati mekugadzira maitiro.


Product Detail

Product Tags

Semicera'sWafer Cassettechinhu chakakosha mukuita semiconductor yekugadzira, yakagadzirirwa kuchengetedza zvakachengeteka uye kutakura yakapfava semiconductor wafers. TheWafer Cassetteinopa dziviriro yakasarudzika, kuve nechokwadi chekuti wafer yega yega inochengetwa isina tsvina uye kukuvara kwemuviri panguva yekubata, kuchengetedza, uye kufambisa.

Yakagadzirwa nepamusoro-kuchena, makemikari-resistant zvinhu, iyo SemiceraWafer Cassetteinovimbisa huwandu hwepamusoro hwehutsanana uye kusimba, hwakakosha pakuchengetedza kutendeseka kwewafers padanho rega rega rekugadzira. Iyo chaiyo mainjiniya emakaseti aya inobvumira kusanganisa isina musono nemaotomatiki ekubata masisitimu, kuderedza njodzi yekusvibiswa uye kukuvara kwemagetsi.

Dhizaini yeWafer Cassettezvakare inotsigira yakakwana kuyerera kwemhepo uye tembiricha kutonga, izvo zvakakosha kune maitiro anoda chaiwo mamiriro ezvakatipoteredza. Ingave yakashandiswa mudzimba dzakachena kana panguva yekupisa yekupisa, iyo SemiceraWafer Cassetteinogadzirwa kuti isangane nezvinoda kuomesesa zveiyo semiconductor indasitiri, ichipa yakavimbika uye inopindirana kuita kwekusimudzira kugadzira kwekugadzira uye kunaka kwechigadzirwa.

Items

Kugadzirwa

Tsvakurudzo

Dummy

Crystal Parameters

Polytype

4H

Kutadza kwekutarisa pamusoro

<11-20 >4±0.15°

Electrical Parameters

Dopant

n-mhando Nitrogen

Resistivity

0.015-0.025ohm·cm

Mechanical Parameters

Diameter

150.0±0.2mm

Ukobvu

350±25 μm

Primary flat orientation

[1-100]±5°

Primary flat urefu

47.5±1.5mm

Secondary flat

Hapana

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Bow

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Mberi(Si-face) roughness(AFM)

Ra≤0.2nm (5μm*5μm)

Chimiro

Micropipe density

<1 pa/cm2

<10 ea/cm2

<15 ea/cm2

Metal tsvina

≤5E10atomu/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Mberi Hunhu

Mberi

Si

Surface finish

Si-face CMP

Zvimedu

≤60ea/wafer (saizi≥0.3μm)

NA

Makwara

≤5ea/mm. Kureba kwekuwedzera ≤Diameter

Cumulative kureba≤2*Diameter

NA

Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa

Hapana

NA

Edge chips/indents/fracture/hex plates

Hapana

Polytype nzvimbo

Hapana

Cumulative area≤20%

Cumulative area≤30%

Front laser marking

Hapana

Back Quality

Back finish

C-chiso CMP

Makwara

≤5ea/mm,Cumulative kureba≤2*Diameter

NA

Kuremara kumashure (kumucheto machipisi / indents)

Hapana

Back roughness

Ra≤0.2nm (5μm*5μm)

Back laser marking

1 mm (kubva kumusoro kumucheto)

Edge

Edge

Chamfer

Packaging

Packaging

Epi-yakagadzirira ine vacuum packaging

Multi-wafer kaseti kurongedza

* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD.

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SiC wafers

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