Semicera'sWafer Cassettechinhu chakakosha mukuita semiconductor yekugadzira, yakagadzirirwa kuchengetedza zvakachengeteka uye kutakura yakapfava semiconductor wafers. TheWafer Cassetteinopa dziviriro yakasarudzika, kuve nechokwadi chekuti wafer yega yega inochengetwa isina tsvina uye kukuvara kwemuviri panguva yekubata, kuchengetedza, uye kufambisa.
Yakagadzirwa nepamusoro-kuchena, makemikari-resistant zvinhu, iyo SemiceraWafer Cassetteinovimbisa huwandu hwepamusoro hwehutsanana uye kusimba, hwakakosha pakuchengetedza kutendeseka kwewafers padanho rega rega rekugadzira. Iyo chaiyo mainjiniya emakaseti aya inobvumira kusanganisa isina musono nemaotomatiki ekubata masisitimu, kuderedza njodzi yekusvibiswa uye kukuvara kwemagetsi.
Dhizaini yeWafer Cassettezvakare inotsigira yakakwana kuyerera kwemhepo uye tembiricha kutonga, izvo zvakakosha kune maitiro anoda chaiwo mamiriro ezvakatipoteredza. Ingave yakashandiswa mudzimba dzakachena kana panguva yekupisa yekupisa, iyo SemiceraWafer Cassetteinogadzirwa kuti isangane nezvinoda kuomesesa zveiyo semiconductor indasitiri, ichipa yakavimbika uye inopindirana kuita kwekusimudzira kugadzira kwekugadzira uye kunaka kwechigadzirwa.
Items | Kugadzirwa | Tsvakurudzo | Dummy |
Crystal Parameters | |||
Polytype | 4H | ||
Kutadza kwekutarisa pamusoro | <11-20 >4±0.15° | ||
Electrical Parameters | |||
Dopant | n-mhando Nitrogen | ||
Resistivity | 0.015-0.025ohm·cm | ||
Mechanical Parameters | |||
Diameter | 150.0±0.2mm | ||
Ukobvu | 350±25 μm | ||
Primary flat orientation | [1-100]±5° | ||
Primary flat urefu | 47.5±1.5mm | ||
Secondary flat | Hapana | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Bow | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
Warp | ≤35 μm | ≤45 μm | ≤55 μm |
Mberi(Si-face) roughness(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Chimiro | |||
Micropipe density | <1 pa/cm2 | <10 ea/cm2 | <15 ea/cm2 |
Metal tsvina | ≤5E10atomu/cm2 | NA | |
BPD | ≤1500 ea/cm2 | ≤3000 ea/cm2 | NA |
TSD | ≤500 ea/cm2 | ≤1000 ea/cm2 | NA |
Mberi Hunhu | |||
Mberi | Si | ||
Surface finish | Si-face CMP | ||
Zvimedu | ≤60ea/wafer (saizi≥0.3μm) | NA | |
Makwara | ≤5ea/mm. Kureba kwekuwedzera ≤Diameter | Cumulative kureba≤2*Diameter | NA |
Orenji svuura/makomba/mavara/mitsetse/pakatsemuka/kusvibiswa | Hapana | NA | |
Edge chips/indents/fracture/hex plates | Hapana | ||
Polytype nzvimbo | Hapana | Cumulative area≤20% | Cumulative area≤30% |
Front laser marking | Hapana | ||
Back Quality | |||
Back finish | C-chiso CMP | ||
Makwara | ≤5ea/mm,Cumulative kureba≤2*Diameter | NA | |
Kuremara kumashure (kumucheto machipisi / indents) | Hapana | ||
Back roughness | Ra≤0.2nm (5μm*5μm) | ||
Back laser marking | 1 mm (kubva kumusoro kumucheto) | ||
Edge | |||
Edge | Chamfer | ||
Packaging | |||
Packaging | Epi-yakagadzirira ine vacuum packaging Multi-wafer kaseti kurongedza | ||
* Notes: "NA" zvinoreva kuti hapana chikumbiro Zvinhu zvisina kutaurwa zvinogona kureva SEMI-STD. |